AO4842 30V Dual N-Channel MOSFET General Description Product Summary The AO4842 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters. VDS (V) = 30V ID = 7.7A (VGS = 10V) RDS(ON) < 21mΩ (VGS = 10V) RDS(ON) < 30mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested SOIC-8 Top View D2 D1 Bottom View Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 G1 S2 S1 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current AF VGS TA=25°C TA=25°C Junction and Storage Temperature Range Maximum Junction-to-Lead C ±20 V ID 6.5 IDM 64 -55 to 150 Symbol Alpha & Omega Semiconductor, Ltd. W 1.44 TJ, TSTG t ≤ 10s Steady-State Steady-State A 2 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Units V 7.7 TA=70°C Pulsed Drain Current B Power Dissipation Maximum 30 RθJA RθJL Typ 50 82 41 °C Max 62.5 110 50 Units °C/W °C/W °C/W www.aosmd.com AO4842 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V VDS=30V, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.5 On state drain current VGS=4.5V, VDS=5V 64 TJ=55°C VGS=10V, ID=7.7A 100 nA 2.6 V 16.8 21 24 29 30 A VGS=4.5V, ID=5A 23.4 gFS Forward Transconductance VDS=5V, ID=7.7A 20 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current Coss Output Capacitance Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge 0.75 373 VGS=0V, VDS=15V, f=1MHz VGS=10V, VDS=15V, ID=7.7A µA 2.1 Static Drain-Source On-Resistance DYNAMIC PARAMETERS Ciss Input Capacitance 1 5 RDS(ON) TJ=125°C Units V 0.004 Zero Gate Voltage Drain Current Crss Max 30 IDSS ID(ON) Typ mΩ mΩ S 1 V 2.4 A 448 pF 67 pF 41 pF 1.8 2.8 Ω 7.2 11 nC 3.5 nC 1.3 nC Qgd Gate Drain Charge 1.7 nC tD(on) Turn-On DelayTime 4.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Body Diode Reverse Recovery Time Qrr VGS=10V, VDS=15V, RL=1.95Ω, RGEN=3Ω 2.7 ns 14.9 ns IF=7.7A, dI/dt=100A/µs 10.5 Body Diode Reverse Recovery Charge IF=7.7A, dI/dt=100A/µs 4.5 Turn-Off Fall Time 2.9 ns 12.6 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t ≤ 10s thermal resistance rating. Rev5: May. 2012 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4842 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 15 5V 10V 6V 50 VDS=5V VDS=5V 12 40 9 4.5V ID(A) ID (A) 6V 30 125°C 6 20 VGS=3.5V 125°C 25°C 3 10 0 25° 0 0 1 2 3 4 5 1.5 VDS (Volts) Fig 1: On-Region Characteristics 3 3.5 4 4.5 Normalized On-Resistance 1.8 35 RDS(ON) (mΩ Ω) 2.5 VGS(Volts) Figure 2: Transfer Characteristics 40 VGS=4.5V 30 VGS=4.5V 25 VGS=10V 20 15 VGS=10V 10 VGS=10V 1.6 VGS=4.5V 1.4 1.2 1 0.8 0 5 10 15 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 60 1.0E+01 ID=7.5A ID=7.7A 1.0E+00 50 1.0E-01 40 125°C IS (A) RDS(ON) (mΩ Ω) 2 125°C 1.0E-02 125° 30 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 25°C 1.0E-03 OUT OF20 SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 25°C 1.0E-04 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 25°C 10 1.0E-05 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 VGS (Volts) VSD (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4842 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 600 10 VDSV=15V DS=15V ID=7.7A ID=7.5A 500 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 400 300 Coss 200 Coss 100 0 Crss Crss 0 0 2 4 6 Qg (nC) Figure 7: Gate-Charge Characteristics 8 0 100.0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 50 10µs RDS(ON) limited 40 10µs 100µs 1.0 1ms 10ms 0.1 10s 1 IF=7.4A,10dI/dt=100A/µs 100 VDS (Volts) IF=7.4A, dI/dt=100A/µs Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 20 DC 0.0 0.01 30 VGS=10V, VDS=15V, 0.1s RL=2.0Ω, RGEN=3Ω TJ(Max)=150°C TA=25°C 0.1 TJ(Max)=150°C TA=25°C VGS=10V, VDS=15V, ID=7.4A Power (W) ID (Amps) 10.0 Zθ JA Normalized Transient Thermal Resistance 30 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Single Pulse Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 www.aosmd.com