AON7210 30V N-Channel MOSFET General Description The AON7210 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode. Features VDS 30V ID (at VGS=10V) 50A RDS(ON) (at VGS=10V) < 4mΩ RDS(ON) (at VGS = 4.5V) < 5.8mΩ D Top View 1 8 2 7 3 6 4 5 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G TC=25°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Case 1/6 IAS, IAR 45 A EAS, EAR 101 mJ 83 Steady-State Steady-State W 33 6.2 RθJA RθJC W 4 TJ, TSTG Symbol t ≤ 10s A 24 PDSM TA=70°C A 30 PD TC=100°C V 250 IDSM TA=70°C ±20 39 IDM TA=25°C Continuous Drain Current Units V 50 ID TC=100°C Maximum 30 -55 to 150 Typ 16 45 1.1 °C Max 20 55 1.5 Units °C/W °C/W °C/W www.freescale.net.cn AON7210 30V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V VDS=30V, VGS=0V IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.3 ID(ON) On state drain current VGS=10V, VDS=5V 250 VDS=0V, VGS= ±20V 100 6.2 VGS=4.5V, ID=20A 4.2 5.8 VDS=5V, ID=20A 105 Forward Transconductance VSD IS=1A,VGS=0V Diode Forward Voltage G Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A V A 4.7 TJ=125°C nA 2.3 4 gFS Crss 1.8 3 Static Drain-Source On-Resistance µA 5 VGS=10V, ID=20A Output Capacitance V TJ=55°C RDS(ON) Units 1 Zero Gate Voltage Drain Current Coss Max 30 IDSS IS Typ 0.7 mΩ mΩ S 1 V 50 A 1580 1983 2380 pF 500 724 940 pF 16 54 95 pF 0.3 0.6 0.9 Ω 20 25 30 nC 7 10.5 14 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 13 16.5 20 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 32 40 48 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 5.2 nC 3.6 nC 7.3 ns 3.7 ns 21.2 ns 3.3 ns ns nC 2 A. The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2/6 www.freescale.net.cn AON7210 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10V 4V VDS=5V 3.5V 80 80 4.5V 60 3V ID(A) ID (A) 60 40 40 125°C 20 20 VGS=2.5V 25°C 0 0 0 1 2 3 4 0 5 10 2 3 4 5 6 Normalized On-Resistance 2 8 RDS(ON) (mΩ) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 6 VGS=4.5V 4 2 VGS=10V 1.8 VGS=10V ID=20A 1.6 17 5 VGS=4.5V 2 ID=20A 10 1.4 1.2 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 12 ID=20A 10 1.0E+01 125°C 6 IS (A) RDS(ON) (mΩ) 40 1.0E+00 8 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 4 25°C 2 1.0E-04 1.0E-05 0.0 0 2 3/6 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 0.2 0.4 0.6 0.8 1.0 1.2 4 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AON7210 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 2500 VDS=15V ID=20A 2000 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 1500 Coss 1000 500 Crss 0 0 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 30 0 10µs 100µs 1ms 10ms 10.0 DC 1.0 0.0 0.01 TJ(Max)=150°C TC=25°C 0.1 800 Power (W) ID (Amps) 10µs RDS(ON) limited 0.1 25 10 1 TJ(Max)=150°C TC=25°C 17 5 2 10 600 400 200 1 VDS (Volts) 10 100 0 0.0001 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 0.001 0.01 1 0 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=1.5°C/W PD 0.1 Ton 0.01 0.00001 0.1 Pulse Width (s) Figure 10: Single Pulse Power Rating18 Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 1000 1000.0 100.0 5 Single Pulse 0.0001 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn AON7210 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 Power Dissipation (W) IAR (A) Peak Avalanche Current 1000.0 100.0 10.0 1.0 60 40 20 0 1 10 100 1000 Time in avalanche, tA (µs) Figure 12: Single Pulse Avalanche capability (Note C) 0 25 50 75 100 125 TCASE (°C) Figure 13: Power De-rating (Note F) 150 10000 60 50 TA=25°C 1000 40 Power (W) Current rating ID(A) 80 30 20 17 5 2 10 100 10 10 1 0.00001 0 0 25 75 100 125 TCASE (°C) Figure 14: Current De-rating (Note F) ZθJA Normalized Transient Thermal Resistance 10 1 50 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 0.001 0.1 10 1000 0 18 150 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=55°C/W 0.1 0.01 PD 0.001 Single Pulse Ton 0.0001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) 5/6 www.freescale.net.cn AON7210 30V N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - VDC DUT Qgs Qgd - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC Rg - 10% Vgs Vgs t d(on) tr t d(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs VDC Rg - I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig 6/6 Vgs L Isd + Vdd VDC - IF t rr dI/dt I RM Vdd Vds www.freescale.net.cn