SHENZHENFREESCALE AON7210

AON7210
30V N-Channel MOSFET
General Description
The AON7210 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high
frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON)
and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode.
Features
VDS
30V
ID (at VGS=10V)
50A
RDS(ON) (at VGS=10V)
< 4mΩ
RDS(ON) (at VGS = 4.5V)
< 5.8mΩ
D
Top View
1
8
2
7
3
6
4
5
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current G
TC=25°C
Pulsed Drain Current C
Avalanche Current
C
Avalanche energy L=0.1mH C
TC=25°C
Power Dissipation
B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
AD
Maximum Junction-to-Ambient
Maximum Junction-to-Case
1/6
IAS, IAR
45
A
EAS, EAR
101
mJ
83
Steady-State
Steady-State
W
33
6.2
RθJA
RθJC
W
4
TJ, TSTG
Symbol
t ≤ 10s
A
24
PDSM
TA=70°C
A
30
PD
TC=100°C
V
250
IDSM
TA=70°C
±20
39
IDM
TA=25°C
Continuous Drain
Current
Units
V
50
ID
TC=100°C
Maximum
30
-55 to 150
Typ
16
45
1.1
°C
Max
20
55
1.5
Units
°C/W
°C/W
°C/W
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AON7210
30V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
VDS=30V, VGS=0V
IGSS
Gate-Body leakage current
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.3
ID(ON)
On state drain current
VGS=10V, VDS=5V
250
VDS=0V, VGS= ±20V
100
6.2
VGS=4.5V, ID=20A
4.2
5.8
VDS=5V, ID=20A
105
Forward Transconductance
VSD
IS=1A,VGS=0V
Diode Forward Voltage
G
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=20A
V
A
4.7
TJ=125°C
nA
2.3
4
gFS
Crss
1.8
3
Static Drain-Source On-Resistance
µA
5
VGS=10V, ID=20A
Output Capacitance
V
TJ=55°C
RDS(ON)
Units
1
Zero Gate Voltage Drain Current
Coss
Max
30
IDSS
IS
Typ
0.7
mΩ
mΩ
S
1
V
50
A
1580
1983
2380
pF
500
724
940
pF
16
54
95
pF
0.3
0.6
0.9
Ω
20
25
30
nC
7
10.5
14
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
13
16.5
20
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
32
40
48
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
5.2
nC
3.6
nC
7.3
ns
3.7
ns
21.2
ns
3.3
ns
ns
nC
2
A. The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power
dissipation P DSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation P D is based on T J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
2/6
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AON7210
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
10V
4V
VDS=5V
3.5V
80
80
4.5V
60
3V
ID(A)
ID (A)
60
40
40
125°C
20
20
VGS=2.5V
25°C
0
0
0
1
2
3
4
0
5
10
2
3
4
5
6
Normalized On-Resistance
2
8
RDS(ON) (mΩ)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
6
VGS=4.5V
4
2
VGS=10V
1.8
VGS=10V
ID=20A
1.6
17
5
VGS=4.5V
2
ID=20A
10
1.4
1.2
1
0.8
0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
25
50
75
100
125
150
175
200
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
1.0E+02
12
ID=20A
10
1.0E+01
125°C
6
IS (A)
RDS(ON) (mΩ)
40
1.0E+00
8
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
4
25°C
2
1.0E-04
1.0E-05
0.0
0
2
3/6
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
0.2
0.4
0.6
0.8
1.0
1.2
4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON7210
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
2500
VDS=15V
ID=20A
2000
Capacitance (pF)
VGS (Volts)
8
6
4
2
Ciss
1500
Coss
1000
500
Crss
0
0
0
5
10
15
20
25
Qg (nC)
Figure 7: Gate-Charge Characteristics
30
0
10µs
100µs
1ms
10ms
10.0
DC
1.0
0.0
0.01
TJ(Max)=150°C
TC=25°C
0.1
800
Power (W)
ID (Amps)
10µs
RDS(ON)
limited
0.1
25
10
1
TJ(Max)=150°C
TC=25°C
17
5
2
10
600
400
200
1
VDS (Volts)
10
100
0
0.0001
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
0.001
0.01
1
0
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=1.5°C/W
PD
0.1
Ton
0.01
0.00001
0.1
Pulse Width (s)
Figure 10: Single Pulse Power Rating18
Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
15
20
VDS (Volts)
Figure 8: Capacitance Characteristics
1000
1000.0
100.0
5
Single Pulse
0.0001
0.001
0.01
0.1
T
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/6
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AON7210
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000.0
100.0
10.0
1.0
60
40
20
0
1
10
100
1000
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability (Note
C)
0
25
50
75
100
125
TCASE (°C)
Figure 13: Power De-rating (Note F)
150
10000
60
50
TA=25°C
1000
40
Power (W)
Current rating ID(A)
80
30
20
17
5
2
10
100
10
10
1
0.00001
0
0
25
75
100
125
TCASE (°C)
Figure 14: Current De-rating (Note F)
ZθJA Normalized Transient
Thermal Resistance
10
1
50
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
0.001
0.1
10
1000
0
18
150
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=55°C/W
0.1
0.01
PD
0.001
Single Pulse
Ton
0.0001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
5/6
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AON7210
30V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
VDC
DUT
Qgs
Qgd
-
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
Rg
-
10%
Vgs
Vgs
t d(on)
tr
t d(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
VDC
Rg
-
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
6/6
Vgs
L
Isd
+ Vdd
VDC
-
IF
t rr
dI/dt
I RM
Vdd
Vds
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