s10077 kmpd1088e

CMOS linear image sensor
S10077
Digital output, built-in 8/10-bit A/D converter,
single power supply operation
The S10077 is a CMOS linear image sensor designed for image input applications. The signal processing circuit has a charge
amplifier with excellent input/output characteristics. The circuit also includes a 8-bit/10-bit A/D converter.
Features
Applications
Pixel pitch: 14 μm
Pixel height: 50 μm
Analytical instruments
Position detection
1024 pixels
Image reading
Single power supply operation: 3.3 to 5 V
On-chip charge amplifier with excellent input/output
characteristics
Built-in timing generator allows operation with only
start and clock pulse inputs.
Video data rate: 1 MHz max.
Spectral response range: 400 to 1000 nm
Digital output
8-bit/10-bit switchable ADC
Simultaneous all-pixel integration and variable integration time function
Low power consumption
Structure
Parameter
Number of pixels
Pixel pitch
Pixel height
Photosensitive area length
Package
Window material
Specification
1024
14
50
14.336
LCP (liquid crystal polymer)
Tempax
Unit
μm
μm
mm
-
Absolute maximum ratings
Parameter
Supply voltage
A/D mode selection voltage
Clock pulse voltage
Start pulse voltage
Operating temperature*1
Storage temperature*1
Symbol
Vdd
Vsel
V(CLK)
V(ST)
Topr
Tstg
Condition
Ta=25 °C
Ta=25 °C
Ta=25 °C
Ta=25 °C
Value
-0.3 to +6
-0.3 to +6
-0.3 to +6
-0.3 to +6
-5 to +50
-10 to +60
Unit
V
V
V
V
°C
°C
*1: No condensation
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
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1
CMOS linear image sensor
S10077
Recommended terminal voltage
Parameter
Symbol
Vdd
Supply voltage
AD mode selection voltage
Clock pulse voltage
Start pulse voltage
8-bit
10-bit
High level
Low level
High level
Low level
Vsel
V(CLK)
V(ST)
Min.
3.3
0
Vdd - 0.25
Vdd - 0.25
0
Vdd - 0.25
0
Typ.
5
Vdd
Vdd
Vdd
-
Max.
5.25
0.4
Vdd + 0.25
Vdd + 0.25
0.4
Vdd + 0.25
0.4
Unit
V
V
V
V
V
V
V
Min.
1M
1M
-
Typ.
f(CLK)/12
12
10
16
14
Max.
12 M
6M
30
60
30
60
-
Unit
Typ.
400 to 1000
700
30
0.04
0.16
0.03
0.12
0.7
2.8
0.7
2.8
29
116
19
76
-
Max.
Unit
nm
nm
V/lx · s
Electrical characteristics (Ta=25 °C)
Parameter
Clock pulse frequency
Symbol
8-bit
10-bit
f(CLK)
Video data rate
VR
CL=10 pF*2
Digital output rise time (10 to 90%)
CL=30 pF*2
CL=10 pF*2
Digital output fall time (90 to 10%)
CL=30 pF*2
8-bit*3
Vdd=3.3 V
10-bit*4
Current
consumoption
8-bit*3
Vdd=5 V
10-bit*4
tr
tf
l
Hz
Hz
ns
ns
mA
*2: CL=Load capacitance of digital output terminal
*3: f(CLK)=12 MHz
*4: f(CLK)=6 MHz
Electrical and optical characteristics (Ta=25 °C)
Parameter
Spectral response range
Peak sensitivity wavelength
Photosensitivity*5
Vdd=3.3 V
Dark output*6
Vdd=5 V
Vdd=3.3 V
Saturation output*9
Vdd=5 V
Vdd=3.3 V
Readout noise
Vdd=5 V
Vdd=3.3 V
Offset output
Vdd=5 V
Symbol
λ
λp
R
8-bit*7
10-bit*8
8-bit*7
10-bit*8
8-bit*7
10-bit*8
8-bit*7
10-bit*8
8-bit*7
10-bit*8
8-bit*7
10-bit*8
8-bit*7
10-bit*8
8-bit*7
10-bit*8
Photoresponse nonuniformity*5 *10
Dd
Dsat
Nr
Do
PRNU
Min.
255
1023
255
1023
11
44
7
28
-
0.6
2.4
0.6
2.4
2
8
2
8
41
164
27
108
±10
digit
digit
digit
digit
%
*5: Measured with a tungsten lamp of 2856 K
*6: Integration time Ts=10 s
*7: f(CLK)=12 MHz
*8: f(CLK)=6 MHz
*9: Absolute value with respect to 0 digit
*10: Photoresponse nonuniformity (PRNU) is the output nonuniformity that occurs when the entire photosensitive area is uniformly
illuminated by light which is 50% of the saturation exposure level. PRNU is measured using 1022 pixels excluding the pixels at both
ends, and is defined as follows:
PRNU= ΔX/X × 100 (%)
X: average output of all pixels, ΔX: difference between X and maximum or minimum output
2
CMOS linear image sensor
S10077
Spectral response (typical example)
(Ta=25 °C)
100
Relative sensitivity (%)
80
60
40
20
0
400
600
800
1200
1000
Wavelength (nm)
KMPDB0266EB
A/D converter specifications (Ta=25 °C)
Parameter
Symbol
-
Digital output format
Resolution*11
Conversion voltage range*12
8-bit mode
10-bit mode
Vdd=3.3 V
Vdd=5 V
RESO
-
Specification
Serial output
8
10
0 to 2.2
0 to 3.3
Unit
bit
V
*11: Vsel=0 V (8-bit mode), Vdd (10-bit mode)
*12: Digital output is available from MSB as serial output.
8-bit mode: D7 to D0
10-bit mode: D9 to D0
3
CMOS linear image sensor
S10077
Timing Chart
tf(CLK)
tr(CLK)
CLK
ST
tf(ST)
tr(ST)
tlp(ST)
thp(ST)
tpi(ST)
KMPDC0224EB
Parameter
Start pulse interval
Start pulse low period
Start pulse high period*13
Start pulse rise and fall times
Clock pulse duty
Clock pulse rise and fall times
Symbol
tpi(ST)
tlp(ST)
thp(ST)
tr(ST), tf(ST)
tr(CLK), tf(CLK)
Min.
12339/f(CLK)
45/f(CLK)
6000/f(CLK)
0
40
0
Typ.
20
50
20
Max.
120000/f(CLK)
30
60
30
Unit
s
s
s
ns
%
ns
*13: Signal charge integration time equals the high period of start pulse + 7 CLK cycles.
The shift register operation starts at the fall of CLK pulse immediately after ST pulse sets to low.
Integration time can be changed by changing the high-to-low ratio of ST pulses.
4
CMOS linear image sensor
S10077
8-bit mode
In the neighborhood of start pixel
012345
10
15
20
25
30
35
40
45
50
55
CLK
tlp(ST)
ST
thp(ST)
tpi(ST)
7
EOS
22
AO1
21
AO
34
AO2
33
46
AO3
45
D7
34
D0 D7
42 46
AO4
57
Trig(A)
DO1
DO
34.5
D0
54
DO2
41.5 46.5
53.5
Trig(D)
33
45
57
EOC
In the neighborhood of last pixel
CLK
ST
thp(ST)
tpi(ST)
12322
EOS
AO
12286
AO1023
12285
12298
AO1024
12297
Trig(A)
DO
D0
D7
D0
D7
D0
D7
D0
12282 12286
12294 12298
12306 12310
12318
DO1022
DO1023
DO1024
12281.5 12286.5 12293.5 12298.5 12305.5 12310.5 12317.5
Trig(D)
12285
12297
12309
12320
EOC
KMPDC0225EB
Note: When using analog output AO, read the AO output at the falling edge of Trig(A).
When using digital output DO, read the DO output at the falling edge of Trig(D).
5
CMOS linear image sensor
S10077
10-bit mode
In the neighborhood of start pixel
012345
10
15
20
25
30
35
40
45
50
55
CLK
tlp(ST)
ST
thp(ST)
tpi(ST)
7
EOS
22
AO1
21
AO
34
AO2
33
46
AO3
45
D9
34
D0 D9
44 46
AO4
57
Trig(A)
DO1
DO
34.5
D0
56
DO2
43.5 46.5
55.5
Trig(D)
33
45
57
EOC
In the neighborhood of last pixel
CLK
ST
thp(ST)
tpi(ST)
12322
EOS
AO
12286
AO1023
12285
12298
AO1024
12297
Trig(A)
DO
D0
D9
D0
D9
D0
D9
D0
12284 12286
12296 12298 12308 12310
12320
DO1022
DO1023
DO1024
12283.5 12286.5 12295.5 12298.5 12307.5 12310.5 12319.5
Trig(D)
12285
12297
12309
12320
EOC
KMPDC0226EB
Note: When using analog output AO, read the AO output at the falling edge of Trig(A).
When using digital output DO, read the DO output at the falling edge of Trig(D).
6
CMOS linear image sensor
S10077
Dimensional outline (unit: mm)
1.35 ± 0.2*1
Photosensitive
surface
7.168 ± 0.3
a
13
1
a’
12
0.2
0.5 ± 0.05*3
1 ch
41.6 ± 0.2
a-a’ cross section
Direction of scan
4.0 ± 0.5
3.0
4.23 ± 0.4
Photosensitive
area 50 µm
9.1 ± 0.1
10.02 ± 0.3
24
1.4 ± 0.2*2
10.2 ± 0.5
Photosensitive area
14.336
2.54
Tolerance unless otherwise noted: ±0.1
*1: Distance from window upper surface
to photosensitive surface
*2: Distance from package bottom
to photosensitive surface
*3: Glass thickness
0.51
27.94
6.83 ± 0.2
KMPDA0202EE
Pin connections
Pin no.
1
2
3
4
5
6
7
8
9
10
11
12
Symbol
NC
D.Trig
DO
A.Trig
AO
NC
NC
Vdd
Vss
NC
NC
NC
I/O
O
O
O
O
I
I
Discription
No connection
Trigger signal for digital output
Digital output
Trigger signal for analog output
Analog output
No connection
No connection
Supply voltage
GND
No connection
No connection
No connection
Pin no.
13
14
15
16
17
18
19
20
21
22
23
24
Symbol
NC
NC
NC
EOS
EOC
NC
Vsel
Vss
Vdd
CLK
ST
NC
I/O
O
O
I
I
I
I
I
Discription
No connection
No connection
No connection
End of scan signal
Digital conversion end signal
No connection
A/D mode selection voltage
GND
Supply voltage
Clock signal
Start signal
No connection
Note: Leave the “NC” terminals open and do not connect them to GND.
When using the analog output terminal, connect a buffer amplifier for impedance conversion to it so as to minimize the current
flow. As the buffer amplifier, use a high input impedance operational amplifier with JFET or CMOS input.
7
CMOS linear image sensor
S10077
Precautions
(1) Electrostatic countermeasures
This device has a built-in protection circuit against static electrical charges. However, to prevent destroying the device with electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static discharges. Also protect
this device from surge voltages which might be caused by peripheral equipment.
(2) Incident window
If dust or dirt gets on the light incident window, it will show up as black blemishes on the image. When cleaning, avoid rubbing the
window surface with dry cloth or dry cotton swab, since doing so may generate static electricity. Use soft cloth, paper or a cotton
swab moistened with alcohol to wipe dust and dirt off the window surface. Then blow compressed air onto the window surface so
that no spot or stain remains.
(3) Soldering
To prevent damaging the device during soldering, take precautions to prevent excessive soldering temperatures and times. Soldering should be performed within 5 seconds at a soldering temperature below 260 °C.
Related information
www.hamamatsu.com/sp/ssd/doc_en.html
Precautions
∙ Notice
∙ Image sensors/Precautions
Information described in this material is current as of May, 2016.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
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HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
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United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741
China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No. KMPD1088E08 May 2016 DN
8