CMOS linear image sensors S9227 series Video data rate: 5 MHz max., simultaneous charge integration The S9227 series is a small CMOS linear image sensor designed for image input applications. Signal charge is integrated on all pixels simultaneously and then read out of 5 MHz. Two package styles are provided: a DIP type and a surface mount type. Features Applications Pixel pitch: 12.5 μm Pixel height: 250 μm Position detection Image reading 512 pixels 5 V single power supply operation Video data rate: 5 MHz max. Simultaneous charge integration Shutter function High sensitivity, low dark current, low noise Built-in timing generator allows operation with only start and clock pulse inputs. Spectral response range: 400 to 1000 nm Two package styles are provided: DIP (dual inline package) type: S9227-03 Surface mount type: S9227-04 Structure Parameter Number of pixels Pixel pitch Pixel height Photosensitive area length Package Window material Specification 512 12.5 250 6.4 Ceramic Borosilicate glass (Tempax) Unit μm μm mm - Absolute maximum ratings Parameter Symbol Condition Value Unit Supply voltage Vdd Ta=25 °C -0.3 to +6 V Clock pulse voltage V(CLK) Ta=25 °C -0.3 to +6 V Start pulse voltage V(ST) Ta=25 °C -0.3 to +6 V Operating temperature*1 Topr -5 to +60 °C Storage temperature*1 Tstg -10 to +70 °C Reflow soldering condition*2 *3 Tsol Peak temperature 240 °C, 2 times (See P.7.) Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. *1: No condensation *2: S9227-04 *3: JEDEC level 5 www.hamamatsu.com 1 CMOS linear image sensors S9227 series Recommended terminal voltage (Ta=25 °C) Parameter Symbol Vdd Supply voltage High level Low level High level Low level Clock pulse voltage Start pulse voltage V(CLK) V(ST) Min. 4.75 Vdd - 0.25 Vdd - 0.25 - Typ. 5 Vdd 0 Vdd 0 Max. 5.25 Vdd + 0.25 Vdd + 0.25 - Unit V V V V V Max. 5M 32 200 Unit Hz Hz mA μV/e- Electrical characteristics [Ta=25 °C, Vdd=5 V, V(CLK)=V(ST)=5 V] Parameter Clock pulse frequency Video data rate Current consumption*4 Conversion efficiency Output impedance*5 Symbol f(CLK) VR I CE Zo Min. 50 k 20 - Typ. f(CLK) 26 1.6 50 Ω *4: f(CLK)=5 MHz *5: An increased current consumption at the video output terminal rises the sensor chip temperature causing an increased dark current. Connect a buffer amplifier for impedance conversion to the video output terminal so that the current flow is minimized. Use a JFET or CMOS input, high-impedance input op amp as the buffer amplifier. Electrical and optical characteristics [Ta=25 °C, Vdd=5 V, V(CLK)=V(ST)=5 V, f(CLK)=5 MHz] Parameter Spectral response range Peak sensitivity wavelength Dark current Saturation charge Dark output voltage*6 Saturation output voltage*7 Readout noise*8 Output offset voltage Photoresponse nonuniformity*9 *10 Symbol λ λp ID Qsat Vd Vsat Nr Vo PRNU Min. Typ. 400 to 1000 650 10 430 1 4.3 0.45 0.6 - 400 4 - Max. 100 10 2 0.9 ±5 Unit nm nm fA fC mV V mV rms V % Integration time=10 ms Voltage difference with respect to Vo Dark state Photoresponse nonuniformity (PRNU) is the output nonuniformity that occurs when the entire photosensitive area is uniformly illuminated by light which is 50% of the saturation exposure level. PRNU is measured using 510 pixels excluding the pixels at both ends, and is defined as follows: PRNU= ΔX/X × 100 (%) X: average output of all pixels, ΔX: difference between X and maximum or minimum output *10: Measured with a tungsten lamp of 2856 K *6: *7: *8: *9: Block diagram CLK ST GND Vdd Timing generator Shift register EOS Video Hold circuit Charge amp array 1 2 3 4 Photodiode array 511 512 KMPDC0167EB 2 CMOS linear image sensors S9227 series Spectral response (typical example) (Ta=25 °C) 100 Relative sensitivity (%) 80 60 40 20 0 400 500 600 700 800 900 1000 1100 Wavelength (nm) KMPDB0230EC Resolution Contrast transfer function vs. spatial frequency (typical example) CTF: contrast transfer function VWO : VBO : VW : VB : VWO - VBO (Ta=25 °C) 1.0 VW - VB output output output output white level black level white level (when input pattern pulse width is wide) black level (when input pattern pulse width is wide) Contrast transfer function CTF = 0.8 S9227 series 0.6 0.4 Previous type 0.2 0 0 10 20 30 40 Spatial frequency (line pairs/mm) 50 KMPDB0321EB 3 CMOS linear image sensors S9227 series Dark output voltage vs. temperature (typical example) Current consumption vs. temperature (typical example) [f(CLK)=5 MHz, Ts=10 ms] 100 [f(CLK)=5 MHz, dark state] 31 Current consumption (mA) Dark output voltage (mV) 30 10 1 0.1 29 28 27 26 0.01 -20 0 20 40 60 25 -20 80 Temperature (°C) 0 20 40 60 80 Temperature (°C) KMPDB0322EC KMPDB0323EC Output waveform of one element [Ta=25 °C, Vdd=5 V, f(CLK)=5 MHz] 4.9 V (saturation output voltage=4.3 V) Saturation state 1 V/div. Dark state CLK 10 V/div. 0.6 V (output offset voltage) GND GND 40 ns/div. 4 CMOS linear image sensors S9227 series Timing chart chart (S9227-03) Trigger 1/f(CLK) 1 2 3 4 5 6 7 8 9 101112 131415 CLK Integration time 2.5 clocks 8.5 clocks ST tlp(ST) thp(ST) tpi(ST) 100 ns 14 clocks 512 Video EOS tf(CLK) tr(CLK) CLK CLK 1/f(CLK) ST Video tr(ST) tvd1 tf(ST) thp(ST) tvd2 tlp(ST) tpi(ST) KMPDC0166EKMPDC0166EF Parameter Start pulse cycle Start pulse high period Start pulse low period Start pulse rise and fall times Clock pulse duty ratio Clock pulse rise and fall times Video delay time 1 Video delay time 2 Symbol tpi(ST) thp(ST) tlp(ST) tr(ST), tf(ST) tr(CLK), tf(CLK) tvd1 tvd2 Min. 530/f(CLK) 8/f(CLK) 15/f(CLK) 0 45 0 32 40 Typ. 20 50 20 40 50 Max. 1100 m 1000 m 100 m 30 55 30 48 60 Unit s s s ns % ns ns ns Note: The internal timing circuit starts operating at the rise of CLK pulse immediately after ST pulse sets to low. The integration time equals the high period of ST pulse plus 6 CLK cycles. The output from 1st channel appears 14 clocks plus 100 ns after the falling edge of ST pulse. The EOS pulse is output 39 ns after the falling edge of CLK pulse. The output voltage after reading the last pixel (512 ch) is indefinite. The integration time can be changed by changing the high-to-low ratio of ST pulses. Start pulse setting example (for setting the start pulse cycle to a minimum and the integration time to a maximum) Start pulse high period=515/f(CLK), Start pulse low period=15/f(CLK) 5 CMOS linear image sensors S9227 series Dimensional outlines (unit: mm) 5 1 A’ 4 1 ch 7.62 ± 0.25 A 7.87 ± 0.25 8 1.05 ± 0.15* +0.05 12.0 ± 0.3 Photosensitive area 6.4 × 0.25 0.25-0.03 0.763 ± 0.25 S9227-03 Photosensitive surface A-A’ cross section Direction of scan Pin no.1 5.0 ± 0.5 0.5 ± 0.05 2.54 ± 0.13 1.5 ± 0.15 0.5 ± 0.05 * Distance from upper surface of window to photosensitive surface 7.62 ± 0.13 KMPDA0173EF Pin no. 1 2 3 4 5 6 7 8 Symbol GND NC NC Vdd Video EOS ST CLK I/O I O O I I Pin name Ground No connection No connection Supply voltage Video output End of scan Start pulse Clock pulse S9227-04 12.5 ± 0.2 0.5 ± 0.05 16 A 9 1 A’ 8 1 ch Direction of scan Photosensitive surface (16 ×)0.6 9 16 1.05 ± 0.2* (4 ×)R0.2 Index mark 1 8 2.74 ± 0.2 7.0 ± 0.2 Photosensitive area 6.4 × 0.25 (16 ×)1.0 1.5 ± 0.15 1.27 8.89 A-A’ cross section * Distance from upper surface of window to photosensitive surface KMPDA0281EC Pin no. 1 2 3 4 5 6 7 8 Symbol NC NC GND NC NC Vdd NC NC I/O I Pin name No connection No connection Ground No connection No connection Supply voltage No connection No connection Pin no. 9 10 11 12 13 14 15 16 Symbol NC NC Video EOS ST CLK NC NC I/O O O I I Pin name No connection No connection Video output End of scan Start pulse Clock pulse No connection No connection 6 CMOS linear image sensors S9227 series Precautions (1) Electrostatic countermeasures This device has a built-in protection circuit against static electrical charges. However, to prevent destroying the device with electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static discharges. Also protect this device from surge voltages which might be caused by peripheral equipment. (2) Light input window If the incident window is contaminated or scratched, the output uniformity will deteriorate considerably, so care should be taken in handling the window. Avoid touching it with bare hands. The window surface should be cleaned before using the device. If dry cloth or dry cotton swab is used to rub the window surface, static electricity may be generated, and therefore this practice should be avoided. Use soft cloth, cotton swab or soft paper moistened with ethyl alcohol to wipe off dirt and foreign matter on the window surface. (3) Soldering To prevent damaging the device during soldering, take precautions to prevent excessive soldering temperatures and times. Soldering should be performed within 5 seconds at a soldering temperature below 260 °C. (4) Reflow soldering (S9227-04) Soldering conditions may differ depending on the board size, reflow furnace, etc. Check the conditions before soldering. A sudden temperature rise and cooling may be the cause of trouble, so make sure that the temperature change is within 4 °C per second. The bonding portion between the ceramic base and the glass may discolor after reflow soldering, but this has no adverse effects on the hermetic sealing of the product. (5) Operating and storage environments Handle the device within the temperature range specified in the absolute maximum ratings. Operating or storing the device at an excessively high temperature and humidity may cause variations in performance characteristics and must be avoided. (6) UV exposure This product is not designed to prevent deterioration of characteristics caused by UV exposure, so do not expose it to UV light. Recommended temperature profile of reflow soldering (S9227-04) 300 Peak temperature 240 °C max. Temperature (°C) 250 200 150 100 50 0 0 50 100 150 200 250 300 Time (s) KAPDB0169EA 7 CMOS linear image sensors S9227 series Application circuit example (S9227-03)*11 +5 V 22 µF /25 V 0.1 µF + +5 V 0.1 µF 1 GND ST CLK 74HC541 22 µF /25 V 2 NC ST 7 3 NC EOS 6 4 Vdd +5 V CLK 8 82 Ω + 82 Ω EOS 22 µF /25 V 74HC541 Video 5 S9227-03 +6 V + 0.1 µF 0.1 µF 100 Ω + - 22 µF /25 V + 22 µF /25 V LT1818 51 Ω Video 22 pF 0.1 µF + -6 V KMPDC0415EA *11: The S9227-04 has a different pin connections, but uses the same circuit. Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Notice ∙ Image sensors/Precautions ∙ Surface mount type products/Precautions Information described in this material is current as of January, 2014. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KMPD1122E11 Jan. 2014 DN 8