CCD linear image sensor S12551-2048 Pixel size: 14 × 14 μm, front-illuminated type, high-speed response and high sensitivity The S12551-2048 is a front-illuminated type CCD linear image sensor with high-speed line rate designed for applications such as sorting machine. Features Applications Pixel size: 14 × 14 μm Foreign object screening 2048 pixels High-speed imaging High CCD node sensitivity: 13 μV/e- typ. Readout speed: 40 MHz max. Anti-blooming function Built-in electronic shutter Structure Parameter Pixel size (H × V) Number of pixels Number of effective pixels Image size (H × V) Horizontal clock phase Output circuit Package Window material Specification 14 × 14 μm 2068 2048 28.672 × 0.014 mm Two-phase Three-stage MOSFET source follower 24-pin ceramic DIP (refer to dimensional outline) Quartz glass*1 *1: Resin sealing Absolute maximum ratings (Ta=25 °C, unless otherwise noted) Parameter Operating temperature Storage temperature Output transistor drain voltage Reset drain voltage Anti-blooming drain voltage Horizontal input source voltage Anti-blooming gate voltage Horizontal input gate voltage Summing gate voltage Output gate voltage Reset gate voltage Transfer gate voltage Horizontal shift register clock voltage Symbol Topr Tstg VOD VRD VABD VISH VABG VIGH VSG VOG VRG VTG VP1H, VP2H Condition Package temperature, No condensation No condensation Value Unit -50 to +60 °C -50 to +70 -0.5 to +20 -0.5 to +18 -0.5 to +18 -0.5 to +18 -10 to +15 -10 to +15 -10 to +15 -10 to +15 -10 to +15 -10 to +15 -10 to +15 °C V V V V V V V V V V V Note: During high-speed operation, the temperature of the sensor increases. Take heat dissipation measures as required to prevent exceeding the absolute maximum ratings. Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to the product within the absolute maximum ratings. www.hamamatsu.com 1 CCD linear image sensor S12551-2048 Operating conditions (Ta=25 °C) Parameter Output transistor drain voltage Reset drain voltage Anti-blooming drain voltage Horizontal input source voltage Test point Horizontal input gate voltage High Anti-blooming gate voltage Low High Summing gate voltage Low Output gate voltage Substrate voltage High Reset gate voltage Low High Transfer gate voltage Low High Horizontal shift register clock voltage Low External load resistance Symbol VOD VRD VABD VISH VIGH VABGH VABGL VSGH VSGL VOG VSS VRGH VRGL VTGH VTGL VP1HH, VP2HH VP1HL, VP2HL RL Min. 14 13 13 -5 2 -4 2 -5 3 8 -1 7 -5 2 -5 2.0 Typ. 15 14 14 VRD -4 5 -2 5 -4 5 0 9 0 8 -4 5 -4 2.2 Max. 16 15 15 8 0 8 -3 7 10 1 9 -3 8 -3 2.4 Unit V V V V V V V V V V V kΩ Electrical characterisitics (Ta=25 °C, operating conditions: Typ., unless otherwise noted) Parameter Output signal frequency*2 Without electronic shutter Line rate With electronic shutter Horizontal shift register capacitance Anti-blooming gate capacitance Summing gate capacitance Reset gate capacitance Transfer gate capacitance Charge transfer efficiency*3 DC output level*2 Output impedance*2 Power consumption*2 *4 Symbol fop LRnes LRes CP1H, CP2H CABG CSG CRG CTG CTE Vo Zo P Min. 0.99995 8 - Typ. 20 9.5 9.5 220 80 10 10 120 0.99999 9 160 100 Max. 40 19.2 18.7 10 140 Unit MHz kHz pF pF pF pF pF V Ω mW *2: The value depends on the load resistance. *3: Charge transfer efficiency per pixel of CCD shift register, measured at half of the full well capacity *4: Power consumption of the on-chip amplifier plus load resistance Electrical and optical characterisitics (Ta=25 °C, operating conditions: Typ., unless otherwise noted) Parameter Saturation output voltage Full well capacity CCD node sensitivity Dark current (maximum of all effective pixels) Readout noise*6 Dynamic range*7 Spectral response range Photoresponse nonuniformity*8 *9 Image lag*8 Symbol Vsat Csat CCE ID max Nread DR λ PRNU Lag Min. 70 11 1167 - Typ. Fw × Sv 100 13 15 40 2500 200 to 1000 ±3 0.1 Max. 15 75 60 ±10 1 Unit V keμV/ee-/pixel/ms e- rms nm % % Dark current is reduced to half for every 5 to 7 °C decrease in temperature. Readout frequency 40 MHz Dynamic range = Full well capacity / Readout noise Measured at one-half of the saturation output (full well capacity) using LED light (peak emission wavelength: 470 nm) Fixed pattern noise (peak to peak) *9: Photoresponse nonuniformity = × 100 [%] Signal *5: *6: *7: *8: 2 CCD linear image sensor S12551-2048 Spectral response (without window, typical example)*10 (Ta=25 °C) 100 Photosensitivity [V/(μJ∙cm2)] Quantum efficiency (%) 80 60 40 20 (Ta=25 °C) 100 80 60 40 20 0 200 300 400 500 600 700 800 900 1000 1100 0 200 300 400 500 600 700 800 900 1000 1100 Wavelength (nm) Wavelength (nm) KMPDB0398EB KMPDB0448EA *10: Spectral response with quartz glass is decreased according to the spectral transmittance characteristics of window material. Spectral transmittance characteristics of window material (Typ. Ta=25 °C) 100 Transmittance (%) 80 60 40 20 0 200 300 400 500 600 700 800 900 1000 Wavelength (nm) KMPDB0303EA 3 CCD linear image sensor S12551-2048 Device structure (conceptual drawing of top view in dimensional outline) 22 21 20 19 Photodiode D5 D6 D7 D8 D9 D10 D11 D12 D13 D14 D15 D16 S1 S2 S3 S4 18 17 16 S2045 S2046 S2047 S2048 23 24 CCD horizontal shift register D1 D2 D3 D4 D17 D18 D19 D20 15 14 13 1 2 3 4 5 6 7 8 9 10 11 12 Light-shielded section KMPDC0483EA 4 CCD linear image sensor S12551-2048 Timing chart When not using electronic shutter 1 line output period (integration time) ABG Tpwv Tovr TG Tpwh, Tpws 1 P1H 2 3...2067 2068 P2H SG Tpwr RG OS D1 D2 D19 D20 D3...D16, S1...S2048, D17, D18 Normal readout period Dummy readout period* * When making the integration time longer than the normal readout period, to carry away the dark current generated in the CCD horizontal shift register, perform dummy readout after completion of the normal readout until right before rising transfer gate pulse. KMPDC0484EB TG P1H, P2H*11 SG RG TG - P1H Parameter Pulse width Rise and fall times Pulse width Rise and fall times Duty ratio Pulse width Rise and fall times Duty ratio Pulse width Rise and fall times Overlap time Symbol Tpwv Tprv, Tpfv Tpwh Tprh, Tpfh Tpws Tprs, Tpfs Tpwr Tprr, Tpfr Tovr Min. 0.2 10 12.5 2 40 12.5 2 40 6 1 0.1 Typ. 0.4 25 50 25 50 12 0.2 Max. 60 60 - Unit μs ns ns ns % ns ns % ns ns μs *11: Symmetrical clock pulses should be overlapped at 50% of maximum pulse amplitude. 5 CCD linear image sensor S12551-2048 When using electronic shutter 1 line output period Tpwab (electronic shutter: close) Tinteg (integration time) (electronic shutter: open) ABG Tpwv Tovr TG Tpwh, Tpws 1 P1H 2 3...2067 2068 P2H SG Tpwr RG OS D1 D2 D19 D20 D3...D16, S1...S2048, D17, D18 Normal readout period Dummy readout period* * When making the integration time longer than the normal readout period, to carry away the dark current generated in the CCD horizontal shift register, perform dummy readout after completion of the normal readout until right before rising transfer gate pulse. KMPDC0485EB ABG TG P1H, P2H*12 SG RG TG - P1H Parameter Pulse width Rise and fall times Pulse width Rise and fall times Pulse width Rise and fall times Duty ratio Pulse width Rise and fall times Duty ratio Pulse width Rise and fall times Overlap time Integration time Symbol Tpwab Tprab, Tpfab Tpwv Tprv, Tpfv Tpwh Tprh, Tpfh Tpws Tprs, Tpfs Tpwr Tprr, Tpfr Tovr Tinteg Min. 1 300 1.6 10 12.5 2 40 12.5 2 40 6 1 0.1 2 Typ. 2.0 25 50 25 50 12 0.2 - Max. 60 60 - Unit μs ns μs ns ns ns % ns ns % ns ns μs μs *12: Symmetrical clock pulses should be overlapped at 50% of maximum pulse amplitude. 6 CCD linear image sensor S12551-2048 Dimensional outline (unit: mm) 1.35 ± 0.2*1 1.65 ± 0.2*3 Photosensitive area 28.672 × 0.014 0.5 ± 0.05*4 A 13 10.16 ± 0.25 24 +0.05 41.6 ± 0.42 0.25 -0.03 5.015 ± 0.2 Photosensitive surface 12 A’ A-A’ cross section 2.54 ± 0.13 0.5 ± 0.05 27.94 ± 0.3 3.0 ± 0.2 Index mark 3.0 ± 0.03 1 20.8 ± 0.3 Index mark 1.27 ± 0.1 10.03 ± 0.25 1.115 ± 0.1*2 Tolerance unless otherwise noted: ±0.1 *1: Distance from package surface to photosensitive surface *2: Distance from window upper surface to photosensitive surface *3: Distance from package bottom to photosensitive surface *4: Glass thickness This product is not hermetically sealed and moisture may penetrate inside the package. Avoid using or storing this product in an environment where sudden temperature and humidity changes may occur and cause condensation in the package. KMPDA0310EA Pin connections Pin no. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Symbol OS OD OG SG SS RD P2H P1H IGH ABG ABD ISH SS RD TG RG Function Output transistor source Output transistor drain Output gate Summing gate Substrate Reset drain Remark (standard operation) RL=2.2 kΩ +15 V +5 V Same pulse as P2H GND +14 V CCD horizontal resister clock-2 CCD horizontal resister clock-1 +5/-4 V +5/-4 V Test point (horizontal input gate) Anti-blooming gate Anti-blooming drain Test point (horizontal input source) -4 V +5/-2 V +14 V Connect it to RD. Substrate Reset drain GND +14 V Transfer gate Reset gate +8/-4 V +9/0 V 7 CCD linear image sensor S12551-2048 Precautions Electrostatic countermeasures Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge. Ground the tools used to handle these sensors, such as tweezers and soldering irons. It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount of damage that occurs. When UV light irradiation is applied When UV light irradiation is applied, the product characteristics may degrade. Such examples include degradation of the product’s UV sensitivity and increase in dark current. This phenomenon varies depending on the irradiation level, irradiation intensity, usage time, and ambient environment and also varies depending on the product model. Before employing the product, we recommend that you check the tolerance under the ultraviolet light environment that the product will be used in. Related information www.hamamatsu.com/sp/ssd/doc_ja.html Precautions ∙ Disclaimer ∙ Image sensors Information described in this material is current as of September, 2015. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KMPD1147E03 Sep. 2015 DN 8