ILX751B
2048-pixel CCD Linear Sensor (B/W)
Preliminary
Description
The ILX751B is a reduction type CCD linear sensor
designed for facsimile, image scanner and OCR use.
This sensor reads B4 size documents at a density of
200DPI (Dot Per Inch). Featuring a shutter funcyion,
correspondences with the sensitivity correction, etc,
is possible. A built-in timing generator and clockdrivers ensure direct drive at 5V logic for easy use.
Features
• Number of effective pixels: 2048 pixels
• Pixel size: 14µm × 14µm (14µm pitch)
• Built-in timing generator and clock-drivers
• Shutter function
• Ultra low lag
• Maximum clock frequency: 5MHz
22 pin DIP (Cer-DIP)
16 NC
VDD2
8
15 NC
φSHUT
9
14 NC
NC
10
13 NC
φROG
11
9
φSHUT
11
φROG
SHSW
4
21
VDD2
3
NC
2
NC
1
Output amplifier
Sample-and-hold
circuit
6
22
20
VDD2
18
VDD1
D15
NC
19
7
GND
NC
5
17 GND
φCLK
6
8
NC
VDD2
18 NC
7
5
Clock pulse generator
Sample-and-hold pulse generator
φCLK
16
19 GND
NC
4
17
SHSW
GND
20 VDD1
D14
3
S1
NC
21 VDD2
D33
2
Clock-drivers
Read out gate
S2
NC
22 VDD2
CCD analog shift register
Shutter gate
14
15
Shutter drain
NC
NC
S2047
1
Read out gate
pulse generator
12
D34
VOUT
1
S2048
Pin Configuration (Top View)
Mode
selector
GND
13
D35
V
V
°C
°C
D36
• Operating temperature
• Storage temperature
11
6
–10 to +55
–30 to +80
NC
D37
VDD2
NC
10
D38
NC
D39
Absolute Maximum Ratings
• Supply voltage
VDD1
NC
Shutter gate
pulse generator
Block Diagram
12 GND
VOUT
2048
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
PE01Y37
ILX751B
Pin Description
Pin No.
Description
Symbol
Symbol
Pin No.
Description
1
VOUT
Signal output
12
GND
GND
2
NC
NC
13
NC
NC
3
NC
NC
14
NC
NC
4
SHSW
Switch { With S/H → GND
Without S/H → VDD2
15
NC
NC
5
φCLK
Clock pulse
16
NC
NC
6
NC
NC
17
GND
GND
7
NC
NC
18
NC
NC
8
VDD2
5V power supply
19
GND
GND
9
VDD2
5V power supply
20
VDD1
9V power supply
10
NC
NC
21
VDD2
5V power supply
11
φROG
Clock pulse
22
VDD2
5V power supply
Recommended Supply voltage
Item
Min.
Typ.
Max.
Unit
VDD1
8.5
9.0
9.5
V
VDD2
4.75
5.0
5.25
V
Note) Rules for raising and lowering power supply voltage
To raise power supply voltage, first raise VDD1 (9V) and then VDD2 (5V).
To lower voltage, first lower VDD2 (5V) and then VDD1 (9V).
Mode Description
Mode in use
Pin condition
S/H
Pin 4 SHSW
Yes
GND
No
VDD2
Input Capacity of Pins
Item
Symbol
Min.
Typ.
Max.
Unit
Input capacity of φCLK pin
CφCLK
—
10
—
pF
Input capacity of φROG pin
CφROG
—
10
—
pF
Input capacity of φSHUT pin
CφSHUT
—
10
—
pF
Recommended Input Pulse Voltage
Item
Min.
Typ.
Max.
Unit
Input clock high level
4.5
5.0
5.5
V
Input clock low level
0
—
0.5
V
–2–
ILX751B
Electro-optical Characteristics
(Ta = 25°C, VDD1 = 9V, VDD2 = 5V, Clock frequency = 1MHz, Light source = 3200K, IR cut filter: CM-500S (t = 1.0mm))
Item
Symbol
Min.
Typ.
Max.
Unit
Remarks
(30)
40
(50)
V/(lx · s)
Note 1
—
2.0
(8.0)
%
Note 2
Sensitivity
R
Sensitivity nonuniformity
PRNU
Saturation output voltage
VSAT
(1.5)
1.8
—
V
—
Dark voltage average
VDRK
—
0.3
(2.0)
mV
Note 3
Dark signal nonuniformity
DSNU
—
0.5
(3.0)
mV
Note 3
Image lag
IL
—
0.02
—
%
Note 4
Dynamic range
DR
—
6000
—
—
Note 5
Saturation exposure
SE
—
0.045
—
lx · s
Note 6
9V supply current
IVDD1
—
4.0
(8.0)
mA
—
5V supply current
IVDD2
—
1.8
(5.0)
mA
—
Total transfer efficiency
TTE
92.0
97.0
—
%
—
Output impedance
ZO
—
600
—
Ω
—
Offset level
VOS
—
4.0
—
V
Note 7
Shutter lag
SHUT
0
1.0
(5.0)
%
Note 8
Note)
1. For the sensitivity test light is applied with a uniform intensity of illumination.
2. PRNU is defined as indicated below. Ray incidence conditions are the same as for Note 1.
PRNU =
(VMAX – VMIN)/2
× 100 [%]
VAVE
The maximum output is set to VMAX, the minimum output to VMIN and the average output to VAVE.
3. Integration time is 10ms.
4. VOUT = 500mV
5. DR =
VSAT
VDRK
When optical accumulated time is shorter, the dynamic range gets wider because dark voltage is in
proportion to optical accumulated time.
6. SE =
VSAT
R
7. VOS is defined as indicated below.
D31
D32
D33
S1
OS
VOS
GND
–3–
ILX751B
8. To stipulate the lag during shutter opetation, use the formula below.
Place the output voltage average value during shutter operation at VSHUT and the output Voltage average
value when the shutter is not in operation at VAVE. (Refer to Fig. 5.)
SHUT=
VSAT
× 100 [%]
R
Please note that the shutter pulse at this time accord with Fig.5.
–4–
Fig.1. Clock Timing Diagram (without S/H mode)
5
φROG
2
1
2087
2
3
4
1
0
5
φCLK
S2045
S2046
S2047
S2048
D34
D35
D36
S37
S38
D39
D31
D32
D33
S1
S2
S3
S4
D11
D12
D13
D14
D15
D2
D3
D4
–5–
D5
D6
0
VOUT
Optical black
(18 pixels)
Dummy signal (33 pixels)
Effective picture
elements signal
(2048 pixels)
Dummy signal
(6 pixels)
1-line output period (2087 pixels)
ILX751B
ILX751B
Fig. 2. φ
φCLK , VOUT Timing
t1
t2
φCLK
t3
t4
t5
VOUT
t6
Item
Min.
Symbol
φCLK pulse rise/fall time
φCLK pulse duty∗1
φCLK – VOUT1
φCLK – VOUT2
Typ.
Max.
Unit
ns
t1, t2
0
10
—
—
40
50
60
%
t5
t6
50
80
110
ns
30
75
120
ns
∗1 100 × t3 / (t3 + t4)
Fig. 3. φ
φROG, φCLK Timing
φROG
t8
t9
t10
φCLK
t7
Item
φROG, φCLK pulse timing
φROG pulse rise/fall time
φROG pulse period
t11
Symbol
Min.
Typ.
Max.
Unit
t7, t11
t8, t10
t9
500
1000
—
ns
0
10
—
ns
500
1000
—
ns
–6–
ILX751B
Fig. 4. φ
φSHUT Timing
φSHUT
t12
Item
φSHUT pulse rise/fall time
φSHUT pulse period
t13
t14
Symbol
Min.
Typ.
Max.
Unit
t12, t13
t14
0
10
—
ns
500
1000
—
ns
–7–
Fig.5. Shutter Operation Mode Clock
5
φROG
0
5
φCLK
0
2087 bits or more
–8–
5
φSHUT
0
1ms
Illumination∗
Light source
ON
∗ During shutter lag evaluation, the light source will be accompanied by a flash.
ILX751B
Fig.6. Shutter Pulse and Output Voltage
φROG
5V
0V
ON
Illumination
–9–
φSHUT
OFF
ON
OFF
ON
OFF
5V
0V
Shutter ON
VSHUT
VOUT
VAVE
ILX751B
ILX751B
∗ Description of Shutter Pin 9
1) The state at 5V is when the shutter is not in operation.
2) When dropped to 0V, the shutter gate will open, letting the accumulated charge of the sensor be thrown
away to the shutter drain.
φROG
5V
0V
The charge is sent to the transfer
register as signal charge.
Accumulated charge
of the sensor
The charge up to this point will be thrown
away to the shutter drain.
φSHUT
5V
0V
Shutter gate ON
– 10 –
ILX751B
Example of Representative Characteristics
Spectral sensitivity characteristics
(Standard characteristics)
1.0
Ta = 25 C
0.9
Relative sensitivity
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
400
500
600
700
800
900
1000
Wavelength [nm]
Dark signal voltage rate vs. Ambient temperature
(Standard characteristics)
VDD1, VDD2 supply current vs. Clock frequency
(Standard characteristics)
10
10
5
5
IVDD1, IVDD2 – VDD1, VDD2 supply current [mA]
Dark signal voltage rate
IVDD1
IVDD2
1
0.5
0.1
0
10
20
30
40
50
1
0.5
0.1
0.1M
60
Ta – Ambient temperature [ C]
1M
Clock frequency [Hz]
– 11 –
5M
Application Circuit
1
5V
9V
NC
φSHUT
NC
φROG
3
4
5
6
7
8
9
10
11
GND (D)
NC
VDD2 (D)
2
NC
NC
NC
1
NC
GND (A)
12
NC
13
φCLK
14
GND (A)
15
SHSW
16
VDD1 (A)
17
NC
18
VDD2 (D)
19
NC
20
VDD2 (D)
– 12 –
0.01µ
21
VOUT
22
10µ/16V
3k
0.01µ
Output signal
φCLK
φSHUT
22µ/10V
φROG
2SA1175
ILX751B
Application circuits shown are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for
any problems arising out of the use of these circuits or for any infringement of third party patent and other right due to same.
ILX751B
Notes on Handling
1) Static charge prevention
CCD image sensors are easily damaged by static discharge. Before handling, be sure to take the following
protective measures.
a) Either handle bare handed or use non-chargeable gloves, clothes or material. Also use conductive
shoes.
b) When handling directly use an eath band.
c) Install a conductive mat on the floor or working table to prevent the generation of static electricity.
d) lonized air is recommended for discharge when handling CCD image sensors.
e) For the shipment of mounted substrates use cartons treated for the prevention of static charges.
2) Notes on handling CCD Cer-DIP package
The following points should be observed when handling and installing Cer-DIP packages.
a) Remain within the following limits when applying static load to the ceramic portion of the package:
(1) Compressive strength: 39N/surface
(Do not apply load more than 0.7mm inside the outer perimeter of the glass portion.)
(2) Shearing strength:
29N/surface
(3) Tensile strength:
29N/surface
(4) Torsional strength:
0.9Nm
Upper ceramic layer
29N
39N
29N
0.9Nm
Low-melting glass
Lower ceramic layer
(1)
(2)
(3)
(4)
b) In addition, if a load is applied to the entire surface by a hard component, bending stress may be
generated and the package may fracture, etc., depending on the flatness of the ceramic portion.
Therefore, for installation, either use an elastic load, such as a spring plate, or an adhesive.
c) Be aware that any of the following can cause the glass to crack because the upper and lower ceramic
layers are shielded by low-melting glass.
(1) Applying repetitive bending stress to the external leads.
(2) Applying heat to the external leads for an extended period of time with a soldering iron.
(3) Rapid cooling or heating.
(4) Rapid cooling or impact to a limited portion of the low-melting glass with a small-tipped tool such as
tweezers.
(5) Prying the upper or lower ceramic layers away at a support point of the low-melting glass.
Note that the preceding notes should also be observed when removing a component from a board after
it has already been soldered.
3) Soldering
a) Make sure the package temperature does not exceed 80°C.
b) Solder dipping in a mounting furnace causes demage to the glass abd other defects. Use a 30W
soldering iron with a ground wire and solder each pin in less than 2 seconds. For repairs and remount,
cool sufficiently.
c) To dismount image sensors, do not use a solder suction equipment. When using an electric desoldering
tool, ground the controller. For the control system, use a zero cross type.
– 13 –
ILX751B
4) Dust and dirt protection
a) Operate in clean environments.
b) Do not either touch glass plates by hand or have any object come in contact with glass surfaces. Should
dirt stick to a glass surface blow it off with an air blower. (For dirt stuck through static electricity, ionized
air is recommended.)
c) Clean with a cotton bud and ethyl alcohol if the glass surface is grease stained. Be careful not to scratch
the glass.
d) Keep in case to protect from dust and dirt. To prevent dew condensation, preheat or precool when
moving to a room with great temperature differences.
5) Exposure to high temperature or humidity will affect the characteristics. Accordingly avoid storage or usage
in such conditions.
6) CCD image sensors are precise optical equipment that should not be subject to mechanical shocks.
– 14 –
Package Outline
Unit: mm
0˚ to 9˚
22 pin DIP (400mil)
41.6 ± 0.5
28.672 (14µm X 2048Pixels)
7.35 ± 0.5
V
No.1 Pixel
H
0.25
5.0 ± 0.5
10.0 ± 0.5
12
22
11
1
– 15 –
1. The height from the bottom to the sensor surface is 2.45 ± 0.3mm.
3.65
2.54
4.35 ± 0.5
4.0 ± 0.5
2. The thickness of the cover glass is 0.7mm, and the refractive index is 1.5.
0.3
M
0.51
PACKAGE STRUCTURE
Cer-DIP
LEAD TREATMENT
TIN PLATING
LEAD MATERIAL
42 ALLOY
PACKAGE MASS
5.20g
DRAWING NUMBER
LS-A18-01(E)
ILX751B
Sony Corporation
PACKAGE MATERIAL