CCD area image sensor S12071 High sensitivity in UV region, anti-blooming function included The S12071 CCD area image sensor has a back-thinned structure that enables a high sensitivity in the UV to visible region as well as a wide dynamic range, low dark current, and an anti-blooming function. A dedicated driver circuit C12081 series (with Camera Link and USB 2.0 interfaces) is also provided (sold separately). Features Applications High sensitivity in UV region ICP spectrophotometry One-stage TE-cooled type Scientific measuring instrument Low dark current UV imaging Anti-blooming function included Selectable readout port to match your application tap A: low noise amplifier (1 MHz max.) tap B: high-speed amplifier (10 MHz max.) Number of effective pixels: 1024 × 1024 Structure Parameter Image size (H × V) Pixel size (H × V) Number of total pixels (H × V) Number of effective pixels (H × V) Vertical clock phase Horizontal clock phase Tap A Output circuit Tap B Package Window Cooling Specification 24.576 × 24.576 mm 24 × 24 μm 1056 × 1032 1024 × 1024 2 phases 2 phases One-stage MOSFET source follower Three-stage MOSFET source follower 40-pin ceramic DIP Quartz One-stage TE-cooled www.hamamatsu.com 1 CCD area image sensor S12071 Absolute maximum ratings (Ta=25 °C) Parameter Operating temperature*1 *2 Storage temperature*2 Output transistor drain voltage Reset drain voltage Output amplifier return voltage Overflow drain voltage Dump drain voltage Vertical input source voltage Overflow gate voltage Dump gate voltage Vertical input gate voltage Summing gate voltage Output gate voltage Reset gate voltage Transfer gate voltage Vertical shift register clock voltage Horizontal shift register clock voltage Maximum current of built-in TE-cooler*3 Maximum voltage of built-in TE-cooler Symbol Topr Tstg VODA VODB VRDA, VRDB Vret VOFD VDD VISV VOFG VDG VIGV VSGA, VSGB VOGA, VOGB VRGA, VRGB V TG VP1V, VP2V VP1H, VP2H VP3H, VP4H Imax Vmax Min. -50 -50 -0.5 -0.5 -0.5 -0.5 -0.5 -0.5 -0.5 -15 -15 -15 -15 -15 -15 -15 -15 Typ. - Max. +50 +70 +30 +25 +18 +18 +18 +18 +18 +15 +15 +15 +15 +15 +15 +15 +15 Unit °C °C -15 - +15 V - - 4.0 3.4 A V V V V V V V V V V V V V V V *1: Chip temperature *2: No condensation *3: If the current greater than this value flows into the thermoelectric cooler, the heat absorption begins to decrease due to the Joule heat. It should be noted that this value is not the damage threshold value. To protect the thermoelectric cooler and maintain stable operation, the supply current should be less than 60% of this maximum current. Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. When there is a temperature difference between a product and the ambient in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause a deterioration of characteristics and reliability. 2 CCD area image sensor S12071 Operating conditions (Ta=25 °C) Parameter Symbol VODA Output transistor drain voltage VODB Reset drain voltage VRDA, VRDB Output amplifier return voltage*4 Vret Overflow drain voltage VOFD Dump drain voltage VDD Vertical input source VISV Test point Vertical input gate VIGV Overflow gate voltage VOFG Dump gate voltage VDG High VSGAH, VSGBH Summing gate voltage Low VSGAL, VSGBL Output gate voltage VOGA, VOGB High VRGAH,VRGBH Reset gate voltage Low VRGAL, VRGBL High VTGH Transfer gate voltage Low VTGL High VP1VH, VP2VH Vertical shift register clock voltage Low VP1VL, VP2VL VP1HH, VP2HH High VP3HH, VP4HH Horizontal shift register clock voltage VP1HL, VP2HL Low VP3HL, VP4HL Substrate voltage VSS RLA External load resistance RLB *4: Output amplifier return voltage is a positive voltage with respect out of the sensor. Min. 23 11 14 11 11 -10 -10 -10 7 -8 5 6 -8 4 -10 4 -10 Typ. 24 12 15 1 12 12 VRD -9 -9 -9 8 -7 6 7 -7 5 -9 5 -9 Max. 25 13 16 2 13 13 -8 -8 -8 9 -6 7 8 -6 6 -8 6 -8 7 8 9 -8 -7 -6 Unit V V V V V V V V V V V V V V 0 8 10 2.0 2.2 to Substrate voltage, but the current flows in V 24 kΩ 2.4 the direction of flow Electrical characteristics (Ta=25 °C, unless otherwise noted, operating condition: Typ.) Parameter Tap A Signal output Tap B Vertical shift register capacitance frequency*5 Horizontal shift register capacitance Summing gate capacitance Reset gate capacitance Transfer gate capacitance Charge transfer efficiency*6 DC output level*5 Output impedance*5 Output MOSFET supply current/node*5 Power consumption*5 *7 Tap Tap Tap Tap Tap Tap Tap Tap A B A B A B A B Symbol fca fcb CP1V, CP2V CP1H, CP2H CP3H, CP4H CSGA, CSGB CRGA, CRGB C TG CTE Vout Zo Ido P Min. - Typ. 0.1 2 15500 Max. 1 10 - Unit MHz - 100 - pF 0.99995 - 15 15 160 0.99999 16 8 3500 170 2 6 45 70 3 9 65 100 pF pF pF - pF V Ω mA mW *5: Tap A: VODA=24 V, RLA=10 kW, Tap B: VODB=12 V, RLB=2.2 kΩ *6: Charge transfer efficiency per pixel, measured at half of the full well capacity *7: Power consumption of the on-chip amplifier plus load resistance 3 CCD area image sensor S12071 Electrical and optical characteristics (Ta=25 °C, unless otherwise noted, operating condition: Typ.) Parameter Saturation output voltage Full well capacity Tap A Tap B Td=25 °C Td=0 °C Tap A Tap B Tap A Tap B CCD node sensitivity*8 Dark current*9 Readout noise*8 *10 Dynamic range*10 *11 Sv DS Nr DR Photoresponse nonuniformity*12 Spectral response range Anti-blooming PRNU λ AB Point defect*13 Blemish Min. 280 4 4.5 15555 2800 Fw × 100 - Symbol Vsat Fw White spots Black spots - Cluster defect*14 Column defect*15 Typ. Fw × Sv 350 5 5.5 100 7 9 50 38888 7000 ±3 165 to 1100 - Max. 6 6.5 1000 70 18 100 ±10 3 10 3 0 Unit V keμV/ee-/pixel/s e- rms % nm - *8: Tap A: VODA=24 V, RLA=10 kΩ, Tap B: VODB=12 V, RLB=2.2 kΩ *9: Dark current is reduced to half for every 5 to 7 °C decrease in temperature. *10: Signal output frequency=100 kHz (Tap A), 2 MHz (Tap B) *11: Dynamic range=Full well capacity/Readout noise *12: Measured at one-half of the saturation output (full well capacity), using LED light (peak emission wavelength: 660 nm) Photoresponse nonuniformity = Fixed pattern noise (peak to peak) Signal × 100 [%] *13: White spots=Pixels whose dark current is higher than 1 ke- after one-second integration at 0 °C Black spots=Pixels whose sensitivity is lower than one-half of the average pixel output (measured with uniform light producing one-half of the saturation charge) *14: 2 to 9 contiguous defective pixels *15: 10 or more contiguous defective pixels Spectral response (without window)*16 (Typ. Ta=25 °C) 120 110 Quantum efficiency (%) 100 90 80 70 60 50 40 30 20 10 0 200 300 400 500 600 700 800 900 1000 1100 Wavelength (nm) KMPDB0373EB *16: Spectral response is decreased according to the spectral transmittance characteristics of window material. 4 CCD area image sensor S12071 Spectral transmittance characteristics of window material Dark current vs. temperature (Typ. Ta=25 °C) 100 100 Dark current (e-/pixel/s) 80 60 40 10 1 0.1 20 0 200 300 400 500 600 700 800 900 0.01 -50 1000 -40 -20 -30 Wavelength (nm) -10 0 10 20 30 Temperature (°C) KMPDB0303EA KMPDB0370EA Device structure (conceptual drawing of top view) Effective pixels Thinning Effective pixels 33 32 29 28 25 24 23 4-bevel 38 5 4 3 2 1 2 34 5 H 1 20 2 19 3 4 5 6 7 8 9 10 11 12 Tap A Horizontal shift register 13 14 15 16 17 4-bevel Horizontal shift register 1024 signal out V Thinning Transmittance (%) (Typ.) 1000 18 Tap B 1024 signal out 8 blank pixels 8-bevel 8 blank pixels 8-bevel Note: When viewed from the direction of the incident light, the horizontal shift register is covered with a thick silicon layer (dead layer). However, long-wavelength light passes through the silicon dead layer and may possibly be detected by the horizontal shift register. To prevent this, provide light shield on that area as needed. KMPDC0423EA 5 CCD area image sensor S12071 Timing chart Area scanning (Tap A: low speed) Integration period (external shutter has to be open) Readout period (external shutter has to be closed) SGB RGB P1V Tpwv 1 2 4..1031 1032←4 (bevel) + 1024 + 4 (bevel) 3 P2V, TG P1H, P2H P3H, P4H, SGA RGA OSA Tovr Tpfv Tprv Enlarged view P2V, TG Tpwh, Tpws Tprh Tpfh P1H, P2H Tprh, Tprs Tpfh, Tpfs P3H, P4H, SGA Tpwr Tprr Tpfr RGA OSA D1 D2 D3 D4 D30 D5..D16, S1..S1024, D17..D29 D31 D32 KMPDC042 KMPDC0424EA Parameter Pulse width P1V, P2V, TG*17 Rise and fall times Pulse width Rise and fall times P1H, P2H, P3H, P4H*17 Duty ratio Pulse width SGA Rise and fall times Duty ratio Pulse width RGA Rise and fall times TG – P1H, P2H Overlap time Symbol Tpwv Tprv, Tpfv Tpwh Tprh, Tpfh Tpws Tprs, Tpfs Tpwr Tprr, Tpfr Tovr Min. 60 10 500 10 40 500 10 40 10 5 3 Typ. 75 5000 50 5000 50 500 - Max. 60 60 - Unit μs ns ns ns % ns ns % ns ns μs *17: Symmetrical clock pulses should be overlapped at 50% of maximum pulse amplitude. 6 CCD area image sensor S12071 Area scanning (Tap B: high speed) Integration period (external shutter has to be open) Readout period (external shutter has to be closed) SGA RGA P1V Tpwv 1 2 4..1031 1032←4 (bevel) + 1024 + 4 (bevel) 3 P2V, TG P1H, P4H P2H, P3H, SGB RGB OSB Tovr Tpfv Tprv Enlarged view P2V, TG Tpwh, Tpws Tprh Tpfh P1H, P4H Tprh, Tprs Tpfh, Tpfs P2H, P3H, SGB Tpwr Tprr Tpfr RGB OSB D1 D2 D3 D4 D30 D5..D16, S1..S1024, D17..D29 D31 D32 KMPDC0425 KMPDC0425EA Parameter Pulse width P1V, P2V, TG*18 Rise and fall times Pulse width Rise and fall times P1H, P2H, P3H, P4H*18 Duty ratio Pulse width SGB Rise and fall times Duty ratio Pulse width RGB Rise and fall times TG – P1H, P4H Overlap time Symbol Tpwv Tprv, Tpfv Tpwh Tprh, Tpfh Tpws Tprs, Tpfs Tpwr Tprr, Tpfr Tovr Min. 60 10 50 10 40 50 10 40 5 5 3 Typ. 75 250 50 250 50 25 - Max. 60 60 - Unit μs ns ns ns % ns ns % ns ns μs *18: Symmetrical clock pulses should be overlapped at 50% of maximum pulse amplitude. 7 CCD area image sensor S12071 Dimensional outline (unit: mm) Window 32.8 ± 0.13 50.3 ± 0.5 5.0 ± 0.5 50.8 ± 0.51 20.0 ± 0.2 43.8 ± 0.15 2.0 ± 0.05 21 0.6 ± 0.1*3 40 +0.05 0.5 -0.03 5.0 ± 0.05 29.3 ± 0.13 Photosensitive area 24.576 1 20 48.26 ± 0.3 52.5 ± 0.53 60.5 ± 0.2 64.5 ± 0.3 1st pin indication mark Aluminum frame surface*1 Upper surface of window Photosensitive surface*2 11.91 ± 1.2 2.54 ± 0.13 12.41 ± 1.41 0.5 ± 0.07 1.0 ± 0.1 3.0 ± 0.3 TE-cooler *1: Never push the aluminum frame when inserting the sensor into the printed circuit board or the like. Pressing the aluminum frame may cause the window material to peel off and air tightness to be compromised. When inserting the sensor, hold its sides. The sensor can also be inserted by pushing the screw fixing parts at the ends of the package, but do not push with excessive force as they may break. *2: There is a deflection in the photosensitive area [PV (peak to valley) value: approx. 80 to 160 μm]. *3: Window thickness KMPDA0296EC 8 CCD area image sensor S12071 Pin connections Pin no. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 Symbol SS OSA RDA ODA OGA DD RGA SGA P4H P3H P2H P1H SGB RGB DG OGB ODB RDB OSB Vret PPTG P2V P1V NC NC IGV ISV TH TH OFD OFG NC NC NC NC SS P+ P+ Function Substrate Output transistor source-A Reset drain-A Output transistor drain-A Output gate-A Dump drain Reset gate-A Summing gate-A Horizontal shift register clock-4 Horizontal shift register clock-3 Horizontal shift register clock-2 Horizontal shift register clock-1 Summing gate-B Reset gate-B Dump gate Output gate-B Output transistor drain-B Reset drain-B Output transistor source-B Output amplifier return voltage TE-cooler (-) TE-cooler (-) Transfer gate Vertical shift register clock-2 Vertical shift register clock-1 No connection No connection Test point (vertical input gate) Test point (vertical input source) Thermistor Thermistor Overflow drain Overflow gate No connection No connection No connection No connection Substrate TE-cooler (+) TE-cooler (+) Remark (standard operation) 0V RL=10 kΩ +15 V +24 V +6 V +12 V +7 V/-7 V +8 V/-7 V +8 V/-7 V +8 V/-7 V +8 V/-7 V +8 V/-7 V +8 V/-7 V +7 V/-7 V -9 V +6 V +12 V +15 V RL=2.2 kΩ +1 V +5 V/-9 V +5 V/-9 V +5 V/-9 V -9 V Connect to RD +12 V -9 V 0V 9 CCD area image sensor S12071 Specifications of built-in TE-cooler (Typ. vacuum condition) Parameter Internal resistance Maximum heat absorption of built-in TE-cooler*19 *20 Symbol Condition Rint Ta=25 °C Qmax Specification 0.65 ± 0.13 9.9 Unit Ω W *19: This is a theoretical heat absorption level that offsets the temperature difference in the thermoelectric cooler when the maximum current is supplied to the sensor. *20: Heat absorption at Tc=Th Tc: Temperature on the cooling side of TE-cooler Th: Temperature on the heat dissipating side of TE-cooler. (Typ. Th=25 °C) 6 30 5 20 4 10 3 0 2 -10 1 -20 CCD temperature (°C) Voltage (V) Voltage vs. current CCD temperature vs.current -30 0 0 1 2 3 4 5 Current (A) KMPDB0371EA To make the cooling side 0 °C, the temperature on the heat dissipating side must be 30 °C or less. As a guideline, use a heatsink whose thermal resistance is no more than 1 °C/W. Specifications of built-in temperature sensor A thermistor chip is built in the same package with a CCD chip, and the CCD chip temperature can be monitored with it. A relation between the thermistor resistance and absolute temperature is expressed by the following equation. Resistance The characteristics of the thermistor used are as follows. R298=10 kΩ B298/323=3450 K (Typ. Ta=25 °C) 1 MΩ RT1 = RT2 × exp BT1/T2 (1/T1 - 1/T2) RT1: Resistance at absolute temperature T1 [K] RT2: Resistance at absolute temperature T2 [K] BT1/T2: B constant [K] 100 kΩ 10 kΩ 220 240 260 280 300 Temperature (K) KMPDB0111JB 10 CCD area image sensor S12071 Precautions (electrostatic countermeasures) · Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. · Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. · Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge. · Ground the tools used to handle these sensors, such as tweezers and soldering irons. It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount of damage that occurs. Element cooling/heating temperature incline rate When cooling the CCD by an externally attached cooler, set the cooler operation so that the temperature gradient (rate of temperature change) for cooling or allowing the CCD to warm back is less than 5 K/minute. Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions · Notice · Image sensor/Precautions DEVELOPMENTAL Multichannel detector head C12081/C12081-01 Specifications Parameter Data rate Frame rate (max.) Dynamic range Cooling temperature*21 Supply voltage A/D resolution Interface Dimensions Weight Tap Tap Tap Tap Tap Tap A B A B A B Specification 100 kHz 2 MHz 0.09 frames/s 1.42 frames/s 30000 5000 -10 to +10 °C +5 V, ±15 V 16-bit Camra Link Base, USB 2.0 90 × 100 × 79.6 mm 1.2 kg *21: Cooling temperature depends on the circulating water temperature (C12081) and the ambient temperature (C12081-01). Information described in this material is current as of December, 2014. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KMPD1138E03 Dec. 2014 DN 11