INTERSIL HIP9021IB

HIP9021
PRELIMINARY
Portable Battery Drive/Torque Controller for
N-Channel MOSFETs in Motor Control Systems
August 1996
Features
Description
• MOSFET Driver and DC Motor Controller
The HIP9021IB is a dedicated Power MOSFET driver which
drives a DC motor. As a system, motor speed is controlled
while controlling torque. The primary application is drive control for portable drills while providing overload protection.
• Torque Control and Overload Protection
• Battery Power Supply . . . . . . . . . . . . . . . . +5V to +15V
• BiMOS IC with Low Operating Current
The main function of the HIP9021IB is to produce a pulse
width modulated square wave signal which drives the gate of
an N-Channel Power MOSFET. The duty-cycle is determined by the setting of an external potentiometer at the
TRIGGER (speed control) input. As the TRIGGER voltage
level is decreased the duty-cycle of the square wave and the
speed of the motor is increased.
- Maximum Supply Current . . . . . . . . . . . . . . . . .1.5mA
- Maximum Input Leakage Currents . . . . . . . . . . 1.5µA
• 500µA Maximum Supply Current
• 1µA Maximum Input Leakage Currents
• Typical Oscillator Frequency . . . . . . . . . . . . . . . . . 5kHz
• Power-On-Reset Control
The torque of the motor is limited by the voltage level sensed
at the drain of the external Power MOSFET. When the current reaches an adjustable limit set at the TORQUE input,
the drive of the Power MOSFET is disabled.
• 10mA Drive Capability for Gate Output
• Operating Temperature . . . . . . . -40oC to +85oC Range
Applications
The system control components include 2 adjustable potentiometer controls and 2 capacitors for the operating frequency and torque delay control. A fixed or battery supply
voltage in the range of 5V to 15V may be used.
• Portable Battery Operated Electric Drills
• Controller for Small DC Electric Motors
• Torque/Drive Controller for Inductive Loads
The HIP9021IB is provided in a small outline plastic package
for a compact surface mount to a ceramic substrate. The
surface mount assembly can be fit directly into the trigger of
a portable electric drill.
• Intelligent MOSFET Drive
Ordering Information
PART NUMBER
HIP9021IB
TEMP.
RANGE (oC)
-40 to +85
PKG.
NO.
PACKAGE
8 Ld SOIC
M8.15
Pinout
HIP9021IB
(SOIC)
TOP VIEW
DRAIN
1
8
VDD
TRIGGER
2
7
GATE
GND
3
6
DELAY
OSC
4
5
TORQUE
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1
File Number
4055
HIP9021
Block Diagram
VBATT
VDD
DRAIN
+
+
CONTROL
& LOGIC
-
DELAY
TORQUE
GC
TORQUE
LEVEL SET
+
TRIGGER
GATE
SPEED
CONTROL
OSC
OSCILLATOR
HIP9021
GND
2
HIP9021
Absolute Maximum Ratings
Thermal Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +16V
Input Voltage. . . . . . . . . . . . . . . . . . . . . . . GND -0.3V to VCC +0.3V
Maximum Current, IDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Maximum Transient Reverse Current, IR (10s). . . . . . . . . . . . -50mA
Thermal Resistance (Typical, Note 1)
θJA (oC/W)
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
175
Maximum Storage Temperature Range . . . . . . . . . .-65oC to 150oC
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300oC
(Lead Tips Only)
Operating Conditions
Typical Power Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . 7.5V
Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . . . +5V to +15V
Operating Temperature Range . . . . . . . . . . . . . . . . . -40oC to 150oC
Typical Oscillator Frequency. . . . . . . . . . . . . . . . . . . . . . . . . . . 5kHz
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
PARAMETER
VDD = 7.5V, Figure 1 Test Circuit, Table 1 Conditions, TA = +25oC Unless Otherwise Specified
MIN
TYP
MAX
UNITS
IDD
0.1
1.2
3.1
mA
OSC Source Current
+IOSC
19
25
32
µA
OSC Sink Current
-IOSC
-32
-25
-19
µA
OSC Threshold Voltage
VOSC(TH)
4.75
4.95
5.25
V
OSC Trigger Voltage
VOSC(TR)
2.30
2.45
2.65
V
TRIGGER Input Leak Current
ITRIGGER
-
0.02
1.5
µA
TORQUE Input Leak Current
ITORQUE
-
0.02
1.5
µA
DELAY Current at 1V
IDELAY1
1.5
3.4
6
µA
DELAY Current at 2V
IDELAY2
1
32
50
mA
VDELAY(TH)
1.8
1.9
2
V
DRAIN Input Resistance
RDRAIN
150
260
350
kΩ
DRAIN Current
IDRAIN
1
1.7
4.6
mA
GATE Output Source Current
IGATE
10
18
-
mA
GATE Output Voltage
VGATE
6.5
7.4
-
V
-
10
-
V/µs
-
44
-
%
-
3
-
%
TA = 25oC
-
5
-
kHz
TA = -40oC
-
7.2
-
kHz
TA = 85oC
-
3.6
-
kHz
DC Supply Current
DELAY Threshold Voltage
GATE Output Slew Rate
SYMBOL
TEST CONDITIONS
VGATE(S/R)
Measured in Typical Application Circuit,
Duty Cycle = 50%, See Figure 2
DELAY Output Framed Pulse
Duty Cycle
FP/DC
DELAY Output Framed Pulse Delay, VGATE to VDELAY
FP/DLY
Gate Duty Cycle = 50%;
VTORQUE = GND; VDRAIN = VGATE;
DELAY =10kΩ to GND, Refer to Figure 1
for the Test circuit and Timing Diagram of
the DELAY Output Pulse Frame.
Typical Oscillator Frequency
fOSC
NOTES:
1. θJA is measured with the component mounted on an evaluation PC board in free air.
3
HIP9021
VDD
15KΩ
2V
1V
2V
5V
1nF
2V
5V
5V
7.5V
VTRIGGER
22nF
8
0.01µF
10µF
+
DRAIN
VTORQUE
1nF
VDD
1
VDRAIN
5
6
CONTROL
& LOGIC
+
-
TORQUE
1V
2V
VDELAY
DELAY
10K
RD
GC
2
TRIGGER
VGATE
7
+
GATE
4
OSC
10nF
VOSC
OSC
HIP9021
GND
3.75V
2.5V
5V
1nF
3
VDD
VGATE
GND
GATE PULSE WIDTH
1V
VDELAY
GND
FRAMED PULSE WIDTH
FRAMED PULSE DELAY
NOTE: The timing diagrams relate to the delay output framed pulse and show the time duration of the delay pulse “framed” inside of the gate
pulse. The framed pulse duty cycle and delay, in percent, are measured in reference to the gate pulse which is set at 50% duty cycle. The
Delay output framed pulse delay is one-half of the difference of the gate pulse width minus delay output framed pulse width.
FIGURE 1. ELECTRICAL CHARACTERISTICS TEST CIRCUIT FOR SIGNAL FUNCTIONS OF THE HIP9021
TABLE 1. SWITCH POSITIONS OF FIGURE 1 FOR ELECTRICAL CHARACTERISTIC TESTING
SYMBOL
DRAIN
TRIGGER
OSC
TORQUE
DELAY
GATE
MEASURE
IDD
15KΩ to 2V
GND
3.75V
2V
Open
Open
+IOSC
15KΩ to 2V
GND
2.5V
2V
Open
Open
IDD Current Into VDD Pin
Source Current From OSC Pin
-IOSC
15KΩ to 2V
GND
5V
2V
Open
Open
Sink Current Into OSC Pin
VOSC(TH)
1V
Open
1nF
2V
Open
Open
Positive Peak OSC Voltage
VOSC(TG)
1V
Open
1nF
2V
Open
Open
Negative Peak OSC Voltage
ITRIGGER
15KΩ to 2V
5V
5V
2V
Open
Open
TRIGGER Leakage Current
ITORQUE
15KΩ to 2V
Open
5V
5V
Open
Open
TORQUE Leakage Current
IDELAY1
15KΩ to 2V
7.5V
1nF
Open
1V
Open
Current to DELAY Pin
IDELAY2
15KΩ to 2V
7.5V
1nF
Open
2V
Open
VDELAY(TH)
1V
Ramp Up
1nF
2V
GND
Read VGATE
Measure VTRIGGER When
VGATE Less Than 0.5V
RDRAIN
5V
GND
1nF
2V
GND
Open
DRAIN Current; Calculate
RDRAIN = 5V/IDRAIN
IDRAIN
1V
7.5V
5V
2V
Open
Open
DRAIN Current
VGATE
5V
GND
1nF
2V
Open
Open
Measure VGATE = VOUT
IGATE
2V
GND
1nF
2V
GND
Set to
VOUT -0.5V
VGATE(S/R)
Refer to Figure 2 Application Circuit, 50% GATE Output Duty Cycle
Current to DELAY Pin
Measure IGATE Source Current
with VGATE = VOUT -0.5V
GATE Output Slew Rate
FP/DC
Reference Figure 1 Waveforms
FP/DLY
Reference Figure 1 Waveforms
fOSC
1V
VOSC(TH) -1V
1nF
2V
GND
4
25KΩ Load
GATE Output Timing
HIP9021
Pin Descriptions
NAME
NUMBER
DESCRIPTION
DRAIN
1
The input to the DRAIN pin senses the drain of a power MOSFET Output Motor Driver. The DRAIN voltage is an image of the current flowing through the power MOSFET. By limiting this voltage, the torque of
the motor can be controlled.
TRIGGER
2
The TRIGGER input is an analog voltage control level used to fix the duty-cycle at the DRAIN Output. A
voltage level here is determined by a potentiometer adjustment. The TRIGGER voltage level is compared with the triangle signal from the internal oscillator to produce a pulse-width modulated signal.
GND
3
Negative pole of the battery or system ground reference.
OSC
4
Oscillator output normally terminated in a charge/discharge capacitor. A constant current is flowing in
and out to charge and discharge the external capacitor.
TORQUE
5
The TORQUE input is a reference level adjustment for torque control. The voltage reference is compared
with DRAIN input. If VDRAIN > VTORQUE, the GATE output pulse drive must be disabled.
DELAY
6
An external capacitor at the DELAY output is used to delay the torque control action. The external capacitor at the DELAY pin will start to be charged if a MOSFET output over-current condition is detected.
The purpose of the capacitor is to delay the disabling action of the signal GATE drive.
GATE
7
The GATE output drives the Gate of the Power MOSFET.
VDD
8
Positive pole of the battery or Power Supply Voltage, nominally 7.5V.
VBATT
SW
7.5V
330Ω
VDD
1µF
15K
+
DRAIN
180K
+
-
TORQUE
TORQUE
LEVEL SET
470K
100K
CONTROL
& LOGIC
3.3µF
PORTABLE
ELECTRIC
DRILL MOTOR
DELAY
GC
TRIGGER
200K
+
5.6K
270K
GATE
1nF
OSC
OSCILLATOR
SPEED
CONTROL
RFP45N03L
N-CHANNEL
POWER
MOSFET
1nF
HIP9021
GND
NOTE: The value chosen for the torque level set pot is dependent on the type of power MOSFET and motor characteristics.
The TRIGGER is a combined SW/Speed Control function. Motor speed increases as the TRIGGER voltage decreases.
Speed control range: 2.35V (Min) < VTRIGGER < 5.25V (Max)
FIGURE 2. TYPICAL OPERATING CIRCUIT SHOWING THE HIP9021IB AS AN N-CHANNEL MOSFET DRIVER IN A PORTABLE
BATTERY ELECTRIC DRILL APPLICATION
5
HIP9021
Functional Description
A torque effect condition exists when 80% of the DRAIN signal is higher than the TORQUE input level set voltage of the
potentiometer. During this time, the external delay capacitor of
3.3µF is charged through an internal 100K resistor. When the
voltage at the DELAY pin reaches 0.25 x VDD, the RS flip-flop
is then set and the Gate Control (GC) signal shown in Figure
3 goes to low. The Output GATE drive signal is then disabled.
This situation remains even if the voltage on the DELAY pin
stays under 0.25 x VDD for a sustained period of time.
Oscillator
The Oscillator triangle waveform is generated by the charge
and discharge of a 1nF external capacitor connected to the
OSC pin. The OSC terminal has a source and sink drive from a
current mirror which delivers ±25µA. The charge and discharge
of the external capacitor is controlled by 2 comparators which
compare respectively VOSC with 2/3 VDD and VOSC with 1/3
VDD. The period of the triangle wave is nominally 200µs.
At the same time, when the RS flip-flop is set, the external
capacitor at the DELAY pin is discharged via the nMOS
device, Q2 which is driven by the Q output of the flip-flop.
Gate Driver
The TRIGGER input signal is compared from the triangle
waveform of the oscillator to produce a square wave signal.
The duty cycle of the GATE drive signal is increased as the
TRIGGER input level increases. The output of the comparator is then NANDed with a GATE Control signal which can
enable or disable the GATE output. The NAND gate output is
buffered to deliver 18mA typical GATE drive current.
Power-On Reset (POR)
Torque Effect
In reference to Figure 3, the power on of the chip will cause
the reset of the RS Gate Control flip-flop when Q1 is
switched low. As an initial condition, the Gate Control (GC)
signal is reset high. Since power on is the only way to reset
the RS flip-flop, a disabled GATE drive signal due to a torque
effect condition requires a switched (trigger) reset.
The triangle signal, after going through a divider, is also
compared with TRIGGER input level. This produces another
square wave of the same period but with a duty-cycle that is
smaller than the GATE by ~5%. This square wave is used to
enable the comparison between DRAIN and TORQUE
inputs while the MOSFET is conducting.
The POR (power on reset) threshold requires that VDD be less
than 2V to initiate a reset. The POR circuit is based on the
behavior of the voltage reference cell that produces a constant
1.15V (REF. BIAS) when VDD is over 2V. When Q1 is forward
biased, the Q1 drain voltage goes low to reset the input of the
RS flip-flop.
VDD
TORQUE
+
φ
PULL
DOWN
φ
DELAY
100K
LOAD
COMP
3.3µF
330K
φ
50K
φ
200K
REF.
BIAS
1.15V
150K
R
Q
VBATT
Q2
POR
Q1
MOTOR
6K
+
-
2K
DELAY
COMP
S
Q
GATE
CONTROL
(GC)
DRAIN
15K
POWER
MOSFET
OSC
TRIGGER
GATE
+
-
OSC
1nF
2K
BUF
φ
+
φ
40K
FIGURE 3. DETAILED LOGIC DIAGRAM OF THE PORTABLE DRIVE/TORQUE CONTROLLER FOR N-CHANNEL POWER MOSFETS
SHOWING THE DRAIN AND TORQUE, THE GATE CONTROL LOGIC AND THE TRIGGER (SPEED) CONTROL.
6
HIP9021
Small Outline Plastic Packages (SOIC)
M8.15 (JEDEC MS-012-AA ISSUE C)
8 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE
N
INDEX
AREA
H
0.25(0.010) M
B M
INCHES
E
SYMBOL
-B1
2
3
L
SEATING PLANE
-A-
h x 45o
A
D
-C-
e
A1
B
0.25(0.010) M
C
0.10(0.004)
C A M
B S
MIN
MAX
NOTES
A
0.0532
0.0688
1.35
1.75
-
0.0040
0.0098
0.10
0.25
-
B
0.013
0.020
0.33
0.51
9
C
0.0075
0.0098
0.19
0.25
-
D
0.1890
0.1968
4.80
5.00
3
E
0.1497
0.1574
3.80
4.00
4
0.050 BSC
1.27 BSC
-
H
0.2284
0.2440
5.80
6.20
-
h
0.0099
0.0196
0.25
0.50
5
L
0.016
0.050
0.40
1.27
6
8o
0o
N
α
NOTES:
MILLIMETERS
MAX
A1
e
α
MIN
8
0o
8
7
8o
Rev. 0 12/93
1. Symbols are defined in the “MO Series Symbol List” in Section
2.2 of Publication Number 95.
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Dimension “D” does not include mold flash, protrusions or gate
burrs. Mold flash, protrusion and gate burrs shall not exceed
0.15mm (0.006 inch) per side.
4. Dimension “E” does not include interlead flash or protrusions. Interlead flash and protrusions shall not exceed 0.25mm (0.010
inch) per side.
5. The chamfer on the body is optional. If it is not present, a visual
index feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater
above the seating plane, shall not exceed a maximum value of
0.61mm (0.024 inch).
10. Controlling dimension: MILLIMETER. Converted inch dimensions are not necessarily exact.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
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