[ /Title
(RFP45
N03L,
RF1S45
N03L,
RF1S45
N03LS
M)
/Subject
(45A,
30V,
0.022
Ohm,
RFP45N03L,
RF1S45N03L, RF1S45N03LSM
Semiconductor
45A, 30V, 0.022 Ohm,
Logic Level, N-Channel Power MOSFETs
September 1998
Features
Description
• 45A, 30V
• Peak Current vs Pulse Width Curve
These are N-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They
were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers.
These transistors can be operated directly from integrated
circuits.
• UIS Rating Curve
Formerly developmental type TA49030.
• rDS(ON) = 0.022Ω
• Temperature Compensating PSPICE Model
• Can be Driven Directly from CMOS, NMOS, and TTL
Circuits
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
Ordering Information
PART NUMBER
PACKAGE
G
BRAND
RFP45N03L
TO-220AB
FP45N03L
RF1S45N03L
TO-262AA
F45N03L
RF1S45N03LSM
TO-263AB
F45N03L
S
NOTE: When ordering, use the entire part number. Add the suffix 9A, to
obtain the TO-263AB variant in tape and reel, e.g., RF1S45N03LSM9A.
Packaging
JEDEC TO-220AB
JEDEC TO-262AA
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
JEDEC TO-263AB
DRAIN
(FLANGE)
GATE
SOURCE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
© Harris Corporation 1998
7-1
File Number
4005.2
RFP45N03L, RF1S45N03L, RF1S45N03LSM
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage RGS = 20kΩ (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Derate Above 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
RFP45N03L, RF1S45N03L,
RF1S45N03LSM
30
30
±10
45
Refer to Peak Current Curve
Refer to UIS Curve
90
0.606
-55 to 175
UNITS
V
V
V
A
W
W/oC
oC
oC
oC
300
260
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
PARAMETER
BVDSS
ID = 250µA, VGS = 0V
30
-
-
V
Gate to Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250µA
1
-
2
V
VDS = Rated BVDSS, VGS = 0V
-
-
25
µA
VDS = Rated BVDSS, VGS = 0V, TC = 150oC
-
-
250
µA
VGS = ±10V
-
-
±100
nA
ID = 45A, VGS = 5V (Figure 11
-
-
0.022
Ω
VDD = 15V, ID = 45A, RL = 0.33Ω,
VGS = 5V, RGS = 5Ω
(Figures 15, 18, 19)
-
-
260
ns
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
SYMBOL
IDSS
IGSS
rDS(ON)
tON
td(ON)
-
15
-
ns
tr
-
160
-
ns
td(OFF)
-
20
-
ns
tf
-
20
-
ns
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
TEST CONDITIONS
tOFF
Total Gate Charge
Qg(TOT)
VGS = 0V to 10V
Gate Charge at 5V
Qg(5)
VGS = 0V to 5V
Qg(TH)
VGS = 0V to 1V
Threshold Gate Charge
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
VDD = 24V, ID = 45A,
RL = 0.533Ω
IG(REF) = 0.6mA
(Figures 20, 21)
VDS = 25V, VGS = 0V, f = 1MHz
(Figure 14)
-
-
60
ns
-
50
60
nC
-
30
36
nC
-
1.5
1.8
nC
-
1650
-
pF
-
575
-
pF
-
200
-
pF
Thermal Resistance Junction-to-Case
RθJC
-
-
1.65
oC/W
Thermal Resistance Junction-to-Ambient
RθJA
-
-
80
oC/W
MIN
TYP
MAX
UNITS
Source to Drain Diode Specifications
PARAMETER
SYMBOL
Source to Drain Diode Voltage
VSD
Diode Reverse Recovery Time
trr
TEST CONDITIONS
ISD = 45A
-
-
1.5
V
ISD = 45A, dISD/dt = 100A/µs
-
-
125
ns
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
7-2
RFP45N03L, RF1S45N03L, RF1S45N03LSM
Typical Performance Curves
Unless Otherwise Specified
50
1.0
ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
1.2
0.8
0.6
0.4
0.2
0
40
30
20
10
0
0
25
50
75
100
125
TC , CASE TEMPERATURE (oC)
150
25
175
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
50
75
100
125
TC, CASE TEMPERATURE (oC)
150
175
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
ZθJC, NORMALIZED
THERMAL IMPEDANCE
1
0.5
0.2
0.1
PDM
0.1
t1
t2
0.05
0.02
0.01
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
SINGLE PULSE
0.01
10-5
10-4
10-3
10-2
10-1
101
100
t, RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
500
TC = 25oC, TJ = MAX RATED
IDM, PEAK CURRENT CAPABILITY (A)
ID, DRAIN CURRENT (A)
500
100
100µs
1ms
10
10ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
1
1
100ms
DC
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS = 10V
VGS = 5V
I
100
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
= I25
175 - TC
150
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
TC = 25oC
10
10-5
50
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
10-4
10-3
10-2
10-1
t, PULSE WIDTH (s)
100
FIGURE 5. PEAK CURRENT CAPABILITY
7-3
101
RFP45N03L, RF1S45N03L, RF1S45N03LSM
Typical Performance Curves
Unless Otherwise Specified (Continued)
200
100
STARTING TJ = 25oC
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
VGS = 10V
VGS = 5V
100
STARTING TJ = 150oC
10
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS-VDD) +1]
1
0.001
75
VGS = 4.5V
50
0.1
1
tAV , TIME IN AVALANCHE (ms)
VGS = 3.5V
25
VGS = 3V
0
0.01
VGS = 4V
10
100
PULSE DURATION = 250µs, TC = 25oC
4
1
2
3
VDS, DRAIN TO SOURCE VOLTAGE (V)
0
5
NOTE: Refer to Harris Application Notes AN9321 and AN9322.
FIGURE 7. SATURATION CHARACTERISTICS
100
VDD = 15V
100
-55oC
rDS(ON), ON-STATE RESISTANCE (mΩ)
IDS(ON), DRAIN TO SOURCE CURRENT (A)
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
175oC
75
25oC
50
25
PULSE TEST
PULSE DURATION = 250µs
DUTY CYCLE = 0.5% MAX
0
0
1.5
3.0
4.5
6.0
VGS, GATE TO SOURCE VOLTAGE (V)
75
ID = 15A
ID = 45A
50
ID = 2A
25
PULSE DURATION = 250µs
0
2.5
7.5
3.0
3.5
4.0
5.0
4.5
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
2.0
350
VDD = 15V, ID = 45A, RL = 0.333Ω
NORMALIZED ON RESISTANCE
PULSE DURATION = 250µs, VGS = 5V, ID = 45A
300
tr
SWITCHING TIME (ns)
ID = 30A
250
200
150
tf
100
td(OFF)
50
1.5
1.0
0.5
td(ON)
0
0
0
30
20
40
10
RGS, GATE TO SOURCE RESISTANCE (Ω)
-80
50
FIGURE 10. SWITCHING TIME vs GATE RESISTANCE
-40
0
40
80
120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
7-4
200
RFP45N03L, RF1S45N03L, RF1S45N03LSM
Typical Performance Curves
Unless Otherwise Specified (Continued)
2.0
2.0
ID = 250µA
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
VDS , DRAIN TO SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
VGS = 0V, f = 0.1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
COSS
CRSS
0
5
10
15
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
0
40
80
120
200
160
FIGURE 13. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
1000
0
-40
TJ , JUNCTION TEMPERATURE (oC)
1500
500
0.5
0
-80
2500
CISS
1.0
200
FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
2000
1.5
30
5
4
24
3
18
0.75 BVDSS
0.50 BVDSS
12
2
0.25 BVDSS
RL = 0.67Ω
IG(REF) = 0.6mA
VGS = 5V
6
1
0
0
I G ( REF )
25
VDD = BVDSS
VDD = BVDSS
20 ---------------------I G ( AC T )
t, TIME (µs)
VGS , GATE TO SOURCE VOLTAGE (V)
NORMALIZED GATE
THRESHOLD VOLTAGE
VGS = VDS, ID = 250µA
I G ( REF )
80 ---------------------I G ( AC T )
NOTE: Refer to Harris Application Notes AN7254 and AN7260.
FIGURE 14. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 15. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
7-5
RFP45N03L, RF1S45N03L, RF1S45N03LSM
Test Circuits and Waveforms
VDS
BVDSS
L
tP
VARY tP TO OBTAIN
REQUIRED PEAK IAS
+
RG
VDS
IAS
VDD
VDD
-
VGS
DUT
tP
0V
IAS
0
0.01Ω
tAV
FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 17. UNCLAMPED ENERGY WAVEFORMS
tON
tOFF
td(ON)
VDS
td(OFF)
tf
tr
VDS
90%
90%
RL
VGS
+
-
DUT
10%
10%
0
VDD
90%
RGS
VGS
VGS
0
50%
10%
FIGURE 18. SWITCHING TIME TEST CIRCUIT
50%
PULSE WIDTH
FIGURE 19. RESISTIVE SWITCHING WAVEFORMS
VDS
VDD
RL
Qg(TOT)
VDS
VGS = 10V
VGS
Qg(5)
+
VDD
VGS = 5V
VGS
DUT
VGS = 1V
IG(REF)
0
Qg(TH)
IG(REF)
0
FIGURE 20. GATE CHARGE TEST CIRCUIT
FIGURE 21. GATE CHARGE WAVEFORMS
7-6
RFP45N03L, RF1S45N03L, RF1S45N03LSM
PSPICE Electrical Model
.SUBCKT RFP45N03L 2 1 3 ;
rev 11/22/94
CA 12 8 2.55e-9
CB 15 14 2.64e-9
CIN 6 8 1.45e-9
DPLCAP
DBODY 7 5 DBDMOD
DBREAK 5 11 DBKMOD
DPLCAP 10 5 DPLCAPMOD
RSCL2
DBREAK
EBREAK
RDRAIN
+
GATE
EVTO
20 + 18 8
LGATE RGATE
VTO +
+
17
18
DBODY
-
16
21
6
9
MOS2
MOS1
RIN
CIN
8
MOS1 16 6 8 8 MOSMOD M = 0.99
MOS2 16 21 8 8 MOSMOD M = 0.01
11
ESCL
50
6
8
ESG
1
S1A
S1B
S2A
S2B
5
51
-
LDRAIN 2 5 1e-9
LGATE 1 9 4.9e-9
LSOURCE 3 7 4.9e-9
RBREAK 17 18 RBKMOD 1
RDRAIN 50 16 RDSMOD 0.14e-3
RGATE 9 20 0.89
RIN 6 8 1e9
RSCL1 5 51 RSCLMOD 1e-6
RSCL2 5 50 1e3
RSOURCE 8 7 RDSMOD 10.31e-3
RVTO 18 19 RVTOMOD 1
RSCL1
+ 51
EBREAK 11 7 17 18 33.3
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTO 20 6 18 8 1
IT 8 17 1
DRAIN
2
LDRAIN
5
10
RSOURCE
LSOURCE
7
3
SOURCE
S2A
S1A
12
13
8
S1B
RBREAK
15
14
13
17
18
S2B
13
CA
RVTO
CB
+
EGS
-
14
+
6
8
EDS
-
5
8
IT
19
VBAT
+
6 12 13 8 S1AMOD
13 12 13 8 S1BMOD
6 15 14 13 S2AMOD
13 15 14 13 S2BMOD
VBAT 8 19 DC 1
VTO 21 6 0.583
ESCL 51 50 VALUE = {(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/176,6))}
.MODEL DBDMOD D (IS = 3.61e-13 RS = 5.06e-3 TRS1 = 3.05e-3 TRS2 = 7.57e-6 CJO = 2.16e-9 TT = 2.18e-8)
.MODEL DBKMOD D (RS = 1.66e-1 TRS1 = -2.97e-3 TRS2 = 7.57e-6)
.MODEL DPLCAPMOD D (CJO = 0.96e-9 IS = 1e-30 N = 10)
.MODEL MOSMOD NMOS (VTO = 2.313 KP = 53.82 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL RBKMOD RES (TC1 = 8.95e-4 TC2 = -1e-7)
.MODEL RDSMOD RES (TC1 = 3.82e-3 TC2 = 1.17e-5)
.MODEL RSCLMOD RES (TC1 = 2.03e-3 TC2 = 0.45e-5)
.MODEL RVTOMOD RES (TC1 = -2.27e-3 TC2 = -5.75e-7)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.82 VOFF= -2.82)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.82 VOFF= -4.82)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.67 VOFF= 2.33)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 2.33 VOFF= -2.67)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; written by William J. Hepp and C. Frank Wheatley.
7-7