DS9503 ESD Protection Diode with Resistors www.dalsemi.com SPECIAL FEATURES SYMBOL AND CONVENTIONS § Zener characteristic with voltage snap–back to protect against ESD hits C IC § High avalanche voltage, low leakage and low capacitance avoid signal attenuation VCA A § Compatible to all 5V logic families PACKAGE OUTLINE TSOC SURFACE MOUNT PACKAGE § Space saving, low inductance TSOC surface mount package § On–chip 5Ω resistors for isolation at both anode and cathode terminals § Industrial temperature range 1 6 2 5 3 4 SIDE VIEW TOP VIEW 3.7 X 4.0 X 1.5 mm See Mech. Drawings Section ORDERING INFORMATION DS9503P 6-lead TSOC package DESCRIPTION This DS9503 is designed as an ESD protection device for 1–Wire MicroLAN interfaces. In contrast to the DS9502, the DS9503 includes two 5Ω isolation resistors on chip. Although 5Ω are negligible during communication, they represent a high impedance relative to the conducting diode during an ESD event. Thus, the diode absorbs the energy while the resistors further isolate and protect the circuit at the other side of the package. If used with circuits that already have a strong ESD–protection at their I/O port, the ESD protection level is raised to more that 27 kV (IEC 801–2 Reference model). In case of abnormal ESD hits beyond its maximum ratings the DS9503 will eventually fail “short” thus preventing further damage. During normal operation the DS9503 behaves like a regular 7.5V Zener Diode. When the voltage exceeds the trigger voltage, the I/V characteristic of the device will “snapback” allowing the same or higher amount of current to flow, but at a significantly lower voltage. As long as a minimum current or voltage is maintained, the device will stay in the “snapback mode”. If the voltage or the current falls below the holding voltage or holding current, the device will abruptly change to its normal mode and conduct only a small leakage current. 1 of 3 102199 DS9503 DC CHARACTERISTICS Figure 1 DC CHARACTERISTICS DETAIL DRAWING Figure 2 TEST PULSE WAVEFORM Figure 3 TYPICAL APPLICATION Figure 4 2 of 3 102199 DS9503 PHYSICAL SPECIFICATIONS Size Weight See mechanical drawing 0.5 grams ABSOLUTE MAXIMUM RATINGS* Operating Temperature Storage Temperature Soldering Temperature Continuous DC Current Through Package –40°C to +85°C –55°C to +125°C 260°C for 10 seconds 80 mA ∗ This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability ELECTRICAL CHARACTERISTICS (-40°C to +85°C) PARAMETER SYMBOL Leakage Current IL Avalanche Voltage VAV MIN TYP MAX UNITS NOTES 30 100 nA 2 7.8 V 1,3 1 7.4 Trigger Voltage VTRIGGER 9.0 9.5 V Trigger Current ITRIGGER 600 1000 mA Holding Voltage VHOLD 5.5 V Holding Current IHOLD 30 mA 1 Forward Voltage (-10 mA) VF -0.7 -0.8 V 4 Forward Current (-0.7V) IF -10 -100 mA 4 Maximum Peak Current IPP 2.0 A 5 Continuous Current Through Diode ICC Isolation Resistance RI ±80 mA Ω 5 CAPACITANCE (tA=25°C) PARAMETER Junction Capacitance (5V) SYMBOL CJ5 Junction Capacitance (0V) CJ0 MIN TYP 40 MAX 70 UNITS pF NOTES 1 pF 1 UNITS K/W NOTES K/W THERMAL RESISTANCE PARAMETER Junction To Package SYMBOL MIN TYP RΘ JC MAX 75 Junction To Ambient RΘ JA 200 NOTES: 1. All voltages are referenced from Cathode to Anode. 2. At 7.0V. 3. At 0.3 µA. 4. Typical values at room temperature. 5. See pulse specification. 3 of 3 102199