InAsSb photovoltaic detector P11120-201 High-speed response and high sensitivity in the 5 μm spectral band Thermoelectrically cooled infrared detector with no liquid nitrogen required The P11120-201 is an infrared detector that provides high sensitivity in the 5 μm spectral band due to our unique crystal growth technology. The InAsSb photovoltaic detector has a PN junction that ensures high-speed response and high reliability. Typical applications include gas analysis such as CO2, SOx, CO and NOx. Unlike the P11120-901 metal dewar type detector, the P11120-201 is easy to use as it uses a compact package (TO-8) not requiring liquid nitrogen. Features Applications High-speed response Gas analysis High sensitivity Radiation thermometers High reliability Thermal imaging Compact, thermoelectrically cooled TO-8 package Remote sensing Environment-friendly due to use of InAsSb FTIR Suitable for detecting infrared rays emitted from QCL Spectrophotometry Options (sold separately) Heatsink for two-stage TE-cooled type A3179-01 Temperature controller C1103-04 Infrared detector module with preamp C4159-07 Structure Parameter Window material Package Cooling Photosensitive area Specification Sapphire TO-8 Two-stage TE-cooled ϕ1.0 Unit mm Value 0.2 0.1 -40 to +60 -55 to +60 Unit mW V °C °C Absolute maximum ratings Parameter Thermistor power dissipation Reverse voltage Operating temperature Storage temperature Symbol - VR Topr Tstg Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. www.hamamatsu.com 1 InAsSb photovoltaic detector P11120-201 Electrical and optical characteristics (Td=-30 °C) Parameter Peak sensitivity wavelength Cutoff wavelength Photo sensitivity Shunt resistance Detectivity Noise equivalent power Symbol λp λc S Rsh D* NEP Rise time tr Condition λ=λp VR=10 mV (λp, 600, 1) λ=λp VR=0 V, RL=50 Ω 0 to 63% Min. 4.0 5.6 0.8 10 3.5 × 109 - Typ. 4.9 5.9 1.6 13 5.0 × 109 1.8 × 10-11 Max. 2.5 × 10-11 Unit μm μm A/W Ω cm·Hz1/2/W W/Hz1/2 - 0.4 - μs Spectral response (D*) Spectral response C-H type CO2, SOX CO NOX (Typ. Td=-30 °C) 1011 (Typ. Td=-30 °C) 1.8 1.6 Photo sensitivity (A/W) D* (cm · Hz1/2/W) 1.4 1010 9 10 1.2 1.0 0.8 0.6 0.4 0.2 8 10 0 1 2 3 4 5 6 Wavelength (μm) 1 2 3 4 5 6 Wavelength (μm) KIRDB0452EA KIRDB0453EA 2 InAsSb photovoltaic detector P11120-201 Shunt resistance vs. element temperature Dark current vs. reverse voltage (Typ.) 1A (Typ.) 1000 Shunt resistance (Ω) Dark current 100 mA Td=25 °C 10 mA Td=-10 °C 100 10 1 mA Td=-30 °C 100 μA 0.01 0.1 Reverse voltage (V) 1 -80 -60 -40 -20 0 20 40 Element temperature (°C) KIRDB0454EA KIRDB0455EA Linearity (Typ. λ=1.55 μm) Optical output power (μA) 10000 1000 100 10 1 0.01 0.1 1.0 10 100 Incident light level (mW) KIRDB0456EA 3 InAsSb photovoltaic detector P11120-201 Specifications of two-stage TE-cooler (Ta=25 °C) Parameter Allowable current Allowable voltage Thermistor resistance Thermistor power dissipation Symbol Ic Vc Rth Pth Min. 8.1 - Typ. 9.0 - Current vs. voltage of TE-cooled type 1.2 Unit A V kΩ mW Cooling characteristics of TE-cooled type (Typ. Ta=25 °C, Thermal resistance of heatsink=3 °C/W) 30 (Typ. Ta=25 °C, Thermal resistance of heatsink=3 °C/W) 20 Element temperature (°C) 1.0 0.8 Current (A) Max. 1.0 0.95 9.9 0.2 0.6 0.4 10 0 -10 -20 -30 0.2 -40 0 -50 0 0.2 0.4 0.6 0.8 1.0 Voltage (V) 0 0.2 0.4 0.6 0.8 1.0 Current (A) KIRDB0459EA KIRDB0464EA Thermistor temperature characteristic (Typ.) 106 Resistance (Ω) 5 10 104 3 10 -40 -20 0 20 Element temperature (°C) KIRDB0116EA 4 InAsSb photovoltaic detector P11120-201 Measurement circuit example Chopper 600 Hz Detector Band-pass filter r.m.s. meter fo=600 Hz Δf=60 Hz Incident energy 245 μW/cm2 Black body 800 K KIRDC0094EA Dimensional outline (unit: mm) ϕ15.3 ± 0.2 ϕ14 ± 0.2 6.9 ± 0.2 10 ± 0.2 Window ϕ10 ± 0.2 12 min. Photosensitive surface ϕ0.45 Lead 5.1 ± 0.2 5.1 ± 0.2 10.2 ± 0.2 5.1 ± 0.2 Detector (anode) Detector (cathode) TE-cooler (-) TE-cooler (+) Thermistor KIRDA0212EA 5 InAsSb photovoltaic detector P11120-201 Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Dislaimer ∙ Metal, ceramic, plastic products Technical information ∙ Infrared detectors Information described in this material is current as of May, 2015. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KIRD1113E04 May 2015 DN 6