HAMAMATSU G8605_11

InGaAs PIN photodiodes
G8605 series
Thermoelectrically cooled NIR (near infrared)
detector with low noise and high-speed response
InGaAs PIN photodiodes have small terminal capacitance for high-speed response and also feature high shunt resistance and
very low noise. The G8605 series of InGaAs PIN photodiodes are thermoelectrically cooled types that decrease the dark current to achieve high D. One-stage (-10 °C) and two-stage (-20 °C) thermoelectrically cooled types are provided.
Features
Applications
High-speed response
Optical power meter
Low noise
Water content analyzer
Various active area sizes available from I1 to I5 mm
Laser diode life test
Accessories (Optional)
Preamp for InGaAs PIN photodiode
C4159-03
Heatsink for one-stage TE-cooled type
A3179
Heatsink for two-stage TE-cooled type
A3179-01
Temperature controller for TE-cooled type C1103-04
Speci¿cations / Absolute maximum ratings
Type No.
G8605-11
G8605-12
G8605-13
G8605-15
G8605-21
G8605-22
G8605-23
G8605-25
Dimensional
outline/
Window
material *
Package
Cooling
One-stage
TE-cooled
/K
TO-8
Two-stage
TE-cooled
/K
Active
area
(mm)
I1
I2
I3
I5
I1
I2
I3
I5
Thermistor
power
dissipation
(mW)
0.2
Absolute maximum ratings
TE-cooler
Operating
Reverse
voltage temperature
allowable
VR Max.
current
Topr
(A)
(V)
(°C)
5
5
1.5
5
2
-40 to +70
5
5
1.0
5
2
Storage
temperature
Tstg
(°C)
-55 to +85
* Window material K: borosilicate glass with anti-reÀective coating (1.55 —m peak)
Electrical and optical characteristics (Typ. unless otherwise noted)
Measurement
condition
Type No.
G8605-11
G8605-12
G8605-13
G8605-15
G8605-21
G8605-22
G8605-23
G8605-25
Spectral
Peak
response sensitivity
wavelength
range
Element
O
Op
temperature
(°C)
(—m)
-10
0.9 to 1.67
(—m)
1.55
-20
0.9 to 1.65
Photo
sensitivity
S
1.3 —m O=Op
(A/W) (A/W)
0.9
0.95
Dark current
ID
VR=1 V
Typ.
(nA)
0.07
0.3
1
2.5
0.03
0.15
0.5
1.2
Max.
(nA)
0.35
1.5
5
12.5
0.15
0.75
2.5
6
Cut-off
frequency
fc
VR=1 V
RL=50 :
(MHz)
18
4
2
0.6
18
4
2
0.6
www.hamamatsu.com
Terminal
Shunt
capacitance
resistance
Ct
Rsh
VR=1 V
VR=10 mV
f=1 MHz
(pF)
150
550
1000
3500
150
550
1000
3500
(M:)
1500
300
100
30
3000
600
200
60
D
O=Op
NEP
O=Op
(cm·Hz1/2/W) (W/Hz1/2)
5 × 10-15
1 × 10-14
2 × 1013
2 × 10-14
3 × 10-14
3 × 10-15
7 × 10-15
3 × 1013
1 × 10-14
2 × 10-14
1
InGaAs PIN photodiodes
G8605 series
Spectral response
Photo sensitivity temperature characteristic
(Typ.)
1
Temperature coefficient (%/°C)
Photo sensitivity (A/W)
T=25 °C
T=-10 °C
T=-20 °C
0.5
0.6
0.8
1.0
1.2
1.4
1.6
(Typ. Ta=25 °C)
2
1
0
-1
0.6
1.8
0.8
1.0
Wavelength (μm)
1.2
1.4
1.6
1.8
Wavelength (μm)
KIRDB0184EA
KIRDB0042EA
Spectral response shifts towards the short wavelength
side when cooled.
One-stage TE-cooled type: Oc=1.67 mm
Two-stage TE-cooled type: Oc=1.65 mm
Photo sensitivity linearity
Dark current vs. reverse voltage
(Typ. Ta=25 °C, λ=1.3 μm, RL=2 Ω, VR=0 V)
102
G8605-11/-21
98
100 nA
G8605-13
G8605-12/-22
Dark current
Relative sensitivity (%)
100
96
94
(Typ.)
1 μA
G8605-25
10 nA
G8605-23
G8605-15
G8605-12
1 nA
G8605-22
G8605-13/-23
G8605-15/-25
92
100 pA
G8605-11
G8605-21
90
0
2
4
6
8
10
12
14
16
10 pA
0.01
0.1
1
10
100
Reverse voltage (V)
Incident light level (mW)
KIRDB0241EA
KIRDB0242EB
Applying a reverse voltage increases dark current,
but improves frequency characteristics and output
linearity.
2
InGaAs PIN photodiodes
G8605 series
Terminal capacitance vs. reverse voltage
Shunt resistance vs. element temperature
(Typ. Ta=25 °C, f=1 MHz)
10 nF
G8605-13/-23
1 GΩ
1 nF
G8605-11/-21
Shunt resistance
Terminal capacitance
(Typ. VR=10 mV)
10 GΩ
G8605-15/-25
G8605-12/-22
100 pF
G8605-11/-21
100 MΩ
G8605-12/-22
G8605-13/-23
10 MΩ
G8605-15/-25
10 pF
1 MΩ
1 pF
0.01
0.1
1
10
100 kΩ
-40
100
-20
Reverse voltage (V)
20
0
40
60
80
Element temperature (°C)
KIRDB0243EA
KIRDB0244EB
In applications requiring high-speed response, the
lead length should be as short as possible to minimize
the terminal capacitance.
Thermistor temperature characteristic
Cooling characteristics of TE-cooler
(Typ.)
Resistance (Ω)
5
10
104
103
-40
-30
-20
-10
0
10
20
30
(Typ. Ta=25 °C, Thermal resistance of heatsink=3 °C/W)
40
Element temperature (°C)
106
20
One-stage
te-cooled type
0
-20
Two-stage
te-cooled type
-40
-60
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Current (A)
Element temperature (°C)
KIRDB0116EA
KIRDB0231EA
3
InGaAs PIN photodiodes
G8605 series
Current vs. voltage (TE-cooler)
(Typ. Ta=25 °C, Thermal resistance of heatsink=3 °C/W)
1.6
1.4
One-stage
te-cooled type
Current (A)
1.2
1.0
0.8
0.6
Two-stage
te-cooled type
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Voltage (V)
KIRDB0115EB
Dimensional outlines (unit: mm)
 G8605-11/-12/-13/-15
 G8605-21/-22/-23/-25
15.3 ± 0.2
15.3 ± 0.2
14 ± 0.2
10 ± 0.2
6.7 ± 0.2
Photosensitive
surface
12 Min.
0.45
lead
0.45
lead
10.2 ± 0.2
5.1 ± 0.2
5.1 ± 0.2
10.2 ± 0.2
5.1 ± 0.2
5.1 ± 0.2
Window
10 ± 0.2
12 Min.
Photosensitive
surface
6.4 ± 0.2
14 ± 0.2
4.4 ± 0.2
Window
10 ± 0.2
5.1 ± 0.2
5.1 ± 0.2
Detector (anode)
Detector (cathode)
TE-cooler (-)
TE-cooler (+)
Thermistor
KIRDA0152EB
Detector (anode)
Detector (cathode)
TE-cooler (-)
TE-cooler (+)
Thermistor
KIRDA0153EB
4
InGaAs PIN photodiodes
G8605 series
Information described in this material is current as of June, 2011. Product specifications are subject to change without prior notice due to improvements or
other reasons. Before assembly into final products, please contact us for the delivery specification sheet to check the latest information.
Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or
a suffix "(Z)" which means developmental specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product
use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KIRD1049E05 Jun. 2011 DN
5