InGaAs PIN photodiodes G8605 series Thermoelectrically cooled NIR (near infrared) detector with low noise and high-speed response InGaAs PIN photodiodes have small terminal capacitance for high-speed response and also feature high shunt resistance and very low noise. The G8605 series of InGaAs PIN photodiodes are thermoelectrically cooled types that decrease the dark current to achieve high D. One-stage (-10 °C) and two-stage (-20 °C) thermoelectrically cooled types are provided. Features Applications High-speed response Optical power meter Low noise Water content analyzer Various active area sizes available from I1 to I5 mm Laser diode life test Accessories (Optional) Preamp for InGaAs PIN photodiode C4159-03 Heatsink for one-stage TE-cooled type A3179 Heatsink for two-stage TE-cooled type A3179-01 Temperature controller for TE-cooled type C1103-04 Speci¿cations / Absolute maximum ratings Type No. G8605-11 G8605-12 G8605-13 G8605-15 G8605-21 G8605-22 G8605-23 G8605-25 Dimensional outline/ Window material * Package Cooling One-stage TE-cooled /K TO-8 Two-stage TE-cooled /K Active area (mm) I1 I2 I3 I5 I1 I2 I3 I5 Thermistor power dissipation (mW) 0.2 Absolute maximum ratings TE-cooler Operating Reverse voltage temperature allowable VR Max. current Topr (A) (V) (°C) 5 5 1.5 5 2 -40 to +70 5 5 1.0 5 2 Storage temperature Tstg (°C) -55 to +85 * Window material K: borosilicate glass with anti-reÀective coating (1.55 m peak) Electrical and optical characteristics (Typ. unless otherwise noted) Measurement condition Type No. G8605-11 G8605-12 G8605-13 G8605-15 G8605-21 G8605-22 G8605-23 G8605-25 Spectral Peak response sensitivity wavelength range Element O Op temperature (°C) (m) -10 0.9 to 1.67 (m) 1.55 -20 0.9 to 1.65 Photo sensitivity S 1.3 m O=Op (A/W) (A/W) 0.9 0.95 Dark current ID VR=1 V Typ. (nA) 0.07 0.3 1 2.5 0.03 0.15 0.5 1.2 Max. (nA) 0.35 1.5 5 12.5 0.15 0.75 2.5 6 Cut-off frequency fc VR=1 V RL=50 : (MHz) 18 4 2 0.6 18 4 2 0.6 www.hamamatsu.com Terminal Shunt capacitance resistance Ct Rsh VR=1 V VR=10 mV f=1 MHz (pF) 150 550 1000 3500 150 550 1000 3500 (M:) 1500 300 100 30 3000 600 200 60 D O=Op NEP O=Op (cm·Hz1/2/W) (W/Hz1/2) 5 × 10-15 1 × 10-14 2 × 1013 2 × 10-14 3 × 10-14 3 × 10-15 7 × 10-15 3 × 1013 1 × 10-14 2 × 10-14 1 InGaAs PIN photodiodes G8605 series Spectral response Photo sensitivity temperature characteristic (Typ.) 1 Temperature coefficient (%/°C) Photo sensitivity (A/W) T=25 °C T=-10 °C T=-20 °C 0.5 0.6 0.8 1.0 1.2 1.4 1.6 (Typ. Ta=25 °C) 2 1 0 -1 0.6 1.8 0.8 1.0 Wavelength (μm) 1.2 1.4 1.6 1.8 Wavelength (μm) KIRDB0184EA KIRDB0042EA Spectral response shifts towards the short wavelength side when cooled. One-stage TE-cooled type: Oc=1.67 mm Two-stage TE-cooled type: Oc=1.65 mm Photo sensitivity linearity Dark current vs. reverse voltage (Typ. Ta=25 °C, λ=1.3 μm, RL=2 Ω, VR=0 V) 102 G8605-11/-21 98 100 nA G8605-13 G8605-12/-22 Dark current Relative sensitivity (%) 100 96 94 (Typ.) 1 μA G8605-25 10 nA G8605-23 G8605-15 G8605-12 1 nA G8605-22 G8605-13/-23 G8605-15/-25 92 100 pA G8605-11 G8605-21 90 0 2 4 6 8 10 12 14 16 10 pA 0.01 0.1 1 10 100 Reverse voltage (V) Incident light level (mW) KIRDB0241EA KIRDB0242EB Applying a reverse voltage increases dark current, but improves frequency characteristics and output linearity. 2 InGaAs PIN photodiodes G8605 series Terminal capacitance vs. reverse voltage Shunt resistance vs. element temperature (Typ. Ta=25 °C, f=1 MHz) 10 nF G8605-13/-23 1 GΩ 1 nF G8605-11/-21 Shunt resistance Terminal capacitance (Typ. VR=10 mV) 10 GΩ G8605-15/-25 G8605-12/-22 100 pF G8605-11/-21 100 MΩ G8605-12/-22 G8605-13/-23 10 MΩ G8605-15/-25 10 pF 1 MΩ 1 pF 0.01 0.1 1 10 100 kΩ -40 100 -20 Reverse voltage (V) 20 0 40 60 80 Element temperature (°C) KIRDB0243EA KIRDB0244EB In applications requiring high-speed response, the lead length should be as short as possible to minimize the terminal capacitance. Thermistor temperature characteristic Cooling characteristics of TE-cooler (Typ.) Resistance (Ω) 5 10 104 103 -40 -30 -20 -10 0 10 20 30 (Typ. Ta=25 °C, Thermal resistance of heatsink=3 °C/W) 40 Element temperature (°C) 106 20 One-stage te-cooled type 0 -20 Two-stage te-cooled type -40 -60 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Current (A) Element temperature (°C) KIRDB0116EA KIRDB0231EA 3 InGaAs PIN photodiodes G8605 series Current vs. voltage (TE-cooler) (Typ. Ta=25 °C, Thermal resistance of heatsink=3 °C/W) 1.6 1.4 One-stage te-cooled type Current (A) 1.2 1.0 0.8 0.6 Two-stage te-cooled type 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Voltage (V) KIRDB0115EB Dimensional outlines (unit: mm) G8605-11/-12/-13/-15 G8605-21/-22/-23/-25 15.3 ± 0.2 15.3 ± 0.2 14 ± 0.2 10 ± 0.2 6.7 ± 0.2 Photosensitive surface 12 Min. 0.45 lead 0.45 lead 10.2 ± 0.2 5.1 ± 0.2 5.1 ± 0.2 10.2 ± 0.2 5.1 ± 0.2 5.1 ± 0.2 Window 10 ± 0.2 12 Min. Photosensitive surface 6.4 ± 0.2 14 ± 0.2 4.4 ± 0.2 Window 10 ± 0.2 5.1 ± 0.2 5.1 ± 0.2 Detector (anode) Detector (cathode) TE-cooler (-) TE-cooler (+) Thermistor KIRDA0152EB Detector (anode) Detector (cathode) TE-cooler (-) TE-cooler (+) Thermistor KIRDA0153EB 4 InGaAs PIN photodiodes G8605 series Information described in this material is current as of June, 2011. Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact us for the delivery specification sheet to check the latest information. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KIRD1049E05 Jun. 2011 DN 5