Photo IC diodes S9066-211SB S9067-201CT Spectral response close to human eye sensitivity The S9066-211SB, S9067-201CT photo ICs have spectral response close to human eye sensitivity. Two photosensitive areas are made on a single chip. One is for detecting light in the visible to near infrared range and the other is only sensitive to near infrared light and used for output signal correction. Almost only the visible range can be measured by finding the difference between the two output signals in the internal current amplifier circuit. Compared to previously available devices, these photo ICs offer lower output fluctuations for light sources producing the same illuminance at different color temperatures. Features Applications Spectral response close to human eye sensitivity is attained without using visual-compensated filter. Energy-saving sensor for TVs, etc. Operation just as easy to use as a photodiode Large output current equivalent to phototransistors Lower output-current fluctuations Light dimmers for liquid crystal panels Cellular phone backlight dimmers Various types of light level measurement Excellent linearity Low output fluctuations for light sources producing the same illuminance at different color temperatures Absolute maximum ratings (Ta=25 °C) Parameter Reverse voltage Photocurrent Forward current Power dissipation*1 Operating temperature Storage temperature Symbol Condition VR IL IF P Topr No dew condensation*2 Tstg No dew condensation*2 S9066-211SB S9067-201CT -0.5 to +12 5 5 250 150 -30 to +80 -40 to +85 Unit V mA mA mW °C °C *1: Power dissipation decreases at a rate of the following rate above Ta=25 °C. S9066-211SB: 3.3 mW/°C, S9067-201CT: 2.0 mW/°C *2: When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. www.hamamatsu.com 1 Photo IC diodes S9066-211SB, S9067-201CT Electrical and optical characteristics (Ta=25 °C) Parameter Symbol Spectral response range Peak sensitivity wavelength Dark current Photocurrent Rise time*3 Fall time*3 λ λp ID IL tr tf Condition S9066-211SB Typ. Max. 300 to 820 560 1.0 50 0.19 0.35 6.0 2.5 - S9067-201CT Typ. Max. 300 to 820 560 1.0 50 0.18 0.34 6.0 2.5 - Min. VR=5 V VR=5 V, 2856 K, 100 lx 10 to 90%, VR=7.5 V RL=10 kΩ, λ=560 nm Min. Unit nm nm nA mA ms ms *3: Rise/fall time measurement method Pulsed light from LED (λ=660 nm) 2.5 V 90% Vout 10% tr 7.5 V 0.1 μF tf Vout Load resistance RL KPICC0041EB Spectral response Photocurrent vs. illuminance (Typ. Ta=25 °C, VR=5 V) 1.0 (Typ. Ta=25 °C, VR=5 V, 2856 K) 10 mA 0.9 Human eye sensitivity 1 mA 0.7 Photocurrent Relative sensitivity 0.8 0.6 0.5 S9066-211SB S9067-201CT 0.4 100 μA 10 μA 0.3 0.2 1 μA 0.1 0 200 400 600 800 1000 1200 Wavelength (nm) 100 nA 0.1 1 10 100 1000 10000 Illuminance (lx) KPICB0078ED KPICB0083EC 2 Photo IC diodes S9066-211SB, S9067-201CT Dark current vs. ambient temperature Rise/fall times vs. load resistance (Typ. VR=5 V) 10 μA 1000 (Typ. Ta=25 °C, VR=7.5 V, λ=560 nm, Vo=2.5 V) 1 μA Rise/fall times (ms) Dark current 100 100 nA 10 nA tr 10 tf 1 1 nA 100 pA 0 25 50 75 0.1 100 100 1k 10 k 100 k 1M Load resistance (Ω) Ambient temperature (°C) KPICB0076EB KPICB0115EA Directivity 20° 10° 0° 10° (Typ. Ta=25 °C) 20° 30° 30° 40° 40° 50° 50° 60° 60° 70° 70° 80° 90° 100 80° 80 60 40 20 0 20 40 60 80 90° 100 Relative sensitivity (%) KPICB0177EA 3 Photo IC diodes S9066-211SB, S9067-201CT Operating circuit example Photodiode for signal detection Photodiode for signal offset The photo IC diode must be reverse-biased so that a positive potential is applied to the cathode. To eliminate high-frequency components, we recommend placing a load capacitance CL in parallel with load resistance RL as a low-pass filter. Cathode Internal protection resistance (Approx. 150 Ω) The drawing surrounded by the dotted line shows a schematic diagram of the photo IC. Reverse bias power supply Current amp (Approx. 30000 times) Anode Cutoff frequency (fc) ≈ 1 2πCLRL Vout RL CL KPICC0091EC Dimensional outlines (unit: mm) S9066-211SB Center of photosensitive area Photosensitive area 0.46 × 0.32 2.05 ± 0.2 5° 10° ϕ2.0 (Depth 0.15) 10° 5.2 ± 0.3 (Includig burr) (2 ×) ϕ1.0 (Depth 0.15) 2.0 1.0 1.2 ± 0.2 (1.0) 5.0 2.5 ± 0.2 5° 5.2 ± 0.3 (Includig burr) 5.0 (4 ×) 0.45 16.5 ± 1.0 (0.8) (4 ×) 0.55 0.25 +0.15 -0.1 1.27 1.27 1.27 Photosensitive surface 10° 5° 10° 5° 0.75 ± 0.15 (Specified at lead root) Anode (Anode) NC Cathode Tolerance unless otherwise noted: ±0.1, ±2° Shaded area indicates burr. Values in parentheses indicate reference value. KPICA0050EE 4 Photo IC diodes S9066-211SB, S9067-201CT S9067-201CT 3.2 ± 0.2 0.4 0.4 2.7 (4 ×) ϕ0.5 1.4 ± 0.1 0.13 2.0 ± 0.1 0.6 0.25 ± 0.15 Photosensitive surface 1.1 ± 0.1 Center of photosensitive area Photosensitive area 0.32 × 0.46 2.3 Cathode Anode Tolerance unless otherwise noted: ±0.2 Position accuracy of photosensitive area center: X, Y≤±0.3 Electrodes 2.2 KPICA0051ED Recommended land pattern (unit: mm, S9067-201CT) 1.5 2.5 3.5 KPICC0222EA 5 Photo IC diodes S9066-211SB, S9067-201CT Standard packing specifications (S9607-201CT) Reel (conforms to JEITA ET-7200) Dimensions 178 mm Hub diameter 60 mm Tape width 8 mm Material PS Electrostatic characteristics Antistatic 4.0 0.23 3.35 ϕ1.55 3.5 ± 0.2 2.0 8.0 ± 0.2 1.75 ± 0.2 Embossed tape (unit: mm, material: PS, antistatic) 1.65 4.0 ± 0.2 Reel feed direction 2.82 Tolerance unless otherwise noted: ± 0.1 KPICC0226EA Packing quantity 2000 pcs/reel Packing type Reel and desiccant in moisture-proof packaging (vacuum-sealed) 6 Photo IC diodes S9066-211SB, S9067-201CT Measured example of temperature profile with our hot-air reflow oven for product testing 300 °C 240 °C max. Temperature 230 °C 190 °C 160 °C Preheat 120 to 150 s Soldering 40 s max. Time KPICB0172EA ∙ The S9607-201CT supports lead-free soldering. After unpacking, store it in an environment at a temperature of 30 °C or less and a humidity of 60% or less, and perform soldering within 24 hours. ∙ The effect that the product receives during reflow soldering varies depending on the circuit board and reflow oven that are used. Before actural reflow soldering, check for any problems by tesitng out the reflow soldering methods in advance. Operating voltage, output characteristics Figure 2 shows the photocurrent vs. reverse voltage characteristics (light source: LED) for the measurement circuit example in Figure 1. The output curves are shown for illuminance levels. The output curves rise from a reverse voltage (rising voltage) of approximately 0.7 V (±10%). To protect the photo IC diode from excessive current, a 150 Ω (±20%) protection resistor is inserted in the circuit. Reverse voltage VR when the photo IC diode is saturated is the sum of Vbe(ON) and the voltage drop across the protection resistor Rin [Equation (1)]. VR = Vbe(ON) + IL × Rin ............ (1) The photodiode’s reverse voltage (VR) is expressed by Equation (2) according to the voltage drop across the external resistor. This is indicated as load lines in Figure 2. VR = Vcc - IL × RL ............ (2) In Figure 2, the intersections between the output curves and the load lines are the saturation points. From these points, the maximum detectable light level can be specified. Since the maximum light level is determined by the supply voltage (Vcc) and load resistance (RL), adjust them according to the operating conditions. Note: The temperature characteristics of Vbe(ON) is approximately -2 mV/°C, and that of the protection resistor is approximately 0.1%/°C. 7 Photo IC diodes S9066-211SB, S9067-201CT [Figure 1] Measurement circuit example IL RL (external resistor) Rin=150 Ω ± 20% (internal protection resistor) Vcc Photo IC diode KPICC0128EC [Figure 2] Photocurrent vs. reverse voltage (Typ. Ta=25 °C) 5 1600 lx 1380 lx Internal protective resistance Rin: approx. 150 Ω Photocurrent (mA) 4 Saturation region approx. 1260 lx 1150 lx 3 880 lx Load line Vcc=5 V, RL=1 kΩ 2 Saturation region approx. 650 lx 600 lx Load line Vcc=3 V, RL=1 kΩ 300 lx 1 0 0 Rising voltage Vbe(ON)≈0.7 V 1 2 3 4 5 Reverse voltage (V) KPICB0107EC 8 Photo IC diodes S9066-211SB, S9067-201CT Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Dislaimer ∙ Surface mount type products Information described in this material is current as of August, 2015. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KPIC1088E05 Aug. 2015 DN 9