InAsSb photovoltaic detectors P13243 series High-speed response and high sensitivity in the spectral band up to 5 μm, non-cooled type infrared detectors The P13243 series are photovoltaic type infrared detectors that have achieved high sensitivity in the spectral band up to 5 μm without cooling using Hamamatsu unique crystal growth technology and process technology. Because it is non-cooled, it is compact and easy to handle. Features Applications High sensitivity Gas detection (CH4, CO2, CO, etc.) High-speed response Radiation thermometers High shunt resistance Non-cooled, small package Structure Parameter Window material Package Cooling Photosensitive area Field of view (FOV) P13243-011CA P13243-011MA Anti-reflective coating Si Ceramic TO-46 Non-cooled 0.7 × 0.7 55 82 Unit mm degrees Absolute maximum ratings Parameter Reverse voltage Operating temperature Storage temperature Soldering conditions Symbol Condition VR Topr No dew condensation*1 Tstg No dew condensation*1 P13243-011CA P13243-011MA 1 -40 to +85 -40 to +85 Peak temperature 240 °C max. Up to 260 °C, up to 10 s Unit V °C °C - *1: When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. www.hamamatsu.com 1 InAsSb photovoltaic detectors P13243 series Electrical and optical characteristics (Ta=25 °C) Parameter Symbol Condition Peak sensitivity λp wavelength Cutoff wavelength λc Photosensitivity S λ=λp*2 Shunt resistance Rsh VR=10 mV Detectivity D* (λp, 600, 1) Noise equivalent power NEP λ=λp*2 Rise time tr 10 to 90% Min. Typ. Max. Unit - 3.5 - μm 5.0 4.0 120 8.0 × 108 - 5.3 4.5 300 1.0 × 109 7.0 × 10-11 - 8.8 × 10-11 1 μm mA/W kΩ cm·Hz1/2/W W/Hz1/2 μs *2: Uniform irradiation on the entire photosensitive area Note: Uniform irradiation must be applied to the entire photosensitive area during use. Spectral response (D*) Shunt resistance vs. element temperature (Typ. Ta=25 °C) 109 108 107 2 3 4 5 (Typ.) 10000 Shunt resistance (kΩ) D* (cm · Hz1/2/W) 1010 1000 100 10 -60 6 -40 -20 0 20 40 60 Element temperature (°C) Wavelength (μm) KIRDB0610EA KIRDB0611EA Spectral transmittance of window material Linearity (Typ. Ta=25 °C) 100 (Typ. Ta=25 °C, λ=1.55 μm) 10 μA 1 μA 80 100 nA Photocurrent Transmittance (%) 80 60 40 10 nA 1 nA 20 100 pA 0 2 3 4 5 6 Wavelength (μm) 10 pA 10-1 100 101 102 103 104 105 Incident light level (μW) KIRDB0614EA KIRDB0615EA 2 InAsSb photovoltaic detectors P13243 series Measurement circuit example Chopper 600 Hz Detector r.m.s. meter Band-pass filter fo=600 Hz ∆f=60 Hz Incident energy 245 μW/cm2 Black body 800 K KIRDC0094EA Dimensional outlines (unit: mm) P13243-011CA P13243-011MA 5.4 ± 0.2 2.6 ± 0.2 1.2 ± 0.1 4.6 ± 0.2 Index mark 2. 5 (4×) R 0.2 45 ° 2.6 ± 0.2 1.6 ± 0.2 0.45 ± 0.1 0.25 ϕ0.45 Lead ϕ2.5 ± 0.2 0.25 Photosensitive surface 2.1 (1.1) Photosensitive surface 12.0 ± 0.5 2.8 ± 0.2 1.35 ± 0.2 5 2. 1.2 ± 0.1 Photosensitive area (4×) R 0.2 Photosensitive area 0.15 0.65 1.0 0.65 0.15 KIRDA0248EB Case KIRDA0249EB 3 InAsSb photovoltaic detectors P13243 series Recommended temperature profile for reflow soldering (P13243 series) 240 °C max. 220 °C Temperature 190 °C 170 °C Preheat 70 to 90 s Soldering 40 s max. Time KIRDB0616EA The effect that the product is subject to during reflow soldering varies depending on the circuit board and reflow furnace that are used. Before actual reflow soldering, check for any problems by testing out the reflow soldering methods in advance. Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer Technical information ∙ Infrared detectors Information described in this material is current as of December, 2015. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 4 Cat. No. KIRD1130E02 Dec. 2015 DN