INFRARED DETECTOR InAs photovoltaic detector P8079 series, P7163 Infrared detectors with high sensitivity and high-speed response InAs photovoltaic detectors have high sensitivity and high-speed response in the near infrared region from 1.5 to 3.8 µm. These detectors offer better characteristics than PbSe photoconductive detectors. Features Applications l Thermoelectrically cooled type: high sensitivity and high-speed response l Metal dewar type available for low light measurement l Long-wavelength cut-off of up to 3.8 µm l Easy-to-use detector/preamp modules available l Gas analysis l Infrared radiation measurement l Infrared spectrophotometry l FTIR Accessories (Optional) l Heatsink for one-stage TE-cooled type A3179 l Heatsink for two-stage TE-cooled type A3179-01 l Temperature controller C1103-04 l Infrared detector module with preamp P4631-01 (Integrated with P8079-21) l Amplifiers for InAs photovoltaic detector C4159-05 (only for P7163) ■ Specifications / Absolute maximum ratings Type No. D im ensional outline/ W indow m aterial * Package Cooling Active area (mm) P8079-01 TO-5 Non-cooled ➀/S P8079-11 One-stage TE-cooled TO-8 ➁/S P8079-21 Two-stage TE-cooled P7163 Metal dewer LN2 ➂/S * Window material S: sapphire glass Thermistor power dissipation (mW) - φ1 0.2 Absolute maximum ratings Operating Reverse temperature voltage Topr VR (V) (°C) 0.5 -40 to +60 Storage temperature Tstg (°C) -55 to +60 - ■ Electrical and optical characteristics (Typ. unless otherwise noted) Type No. P8079-01 P8079-11 P8079-21 P7163 M easurem ent Photo Peak Cut-off condition sensitivity sensitivity wavelength S E le m en t wavelength te m pe ra tu re λc λ=λp λp T (°C) 25 -10 -30 -196 (µm) 3.45 3.30 3.25 3.00 (µm) 3.8 3.6 3.5 3.1 (A/W) 1.1 1.3 Shunt resistance Rsh D∗ (λp, 1200, 1) NEP λ=λp (Ω) 10 80 200 1 × 105 Typ. Min. (cm ·H z 1/2 /W ) (cm ·H z 1/2 /W ) 1.5 × 109 2 × 109 7.5 × 109 1 × 1010 1.5 × 1010 2 × 1010 3.5 × 1011 6 × 1011 (W/Hz1/2) 4.4 × 10-11 8.9 × 10-12 4.4 × 10-12 1.5 × 10-13 Rise time Term inal tr capacitance VR=0 V Ct RL=50 Ω VR=0 V 0 to 63 % f=1 MHz (µs) 0.1 0.1 (pF) 80 10 5 150 1 InAs photovoltaic detector ■ Spectral response (D*) P8079 series, P7163 ■ Spectral response (Typ.) 1012 (Typ.) 1.4 P7163 (T= -196 ˚C) PHOTO SENSITIVITY (A/W) D* (λ,1200,1) (cm · Hz1/2/W) 1.2 11 10 P8079-21 (T= -30 ˚C) 1010 9 10 1 2 T=25 ˚C 0.8 T= -10 ˚C 0.6 T= -30 ˚C 0.4 0.2 P8079-01 (T=25 ˚C) 108 1.0 3 4 5 0 1.0 6 WAVELENGTH (µm) 1.5 2.0 2.5 3.0 3.5 4.0 WAVELENGTH (µm) KIRDB0165EA ■ S/N vs. chopping frequency (P7163) KIRDB0183EA ■ Shunt resistance vs. element temperature (Typ.) 103 4.5 1 kΩ SHUNT RESISTANCE S/N (ARB. UNIT) LOAD RESISTANCE: 1 kΩ SUPPLY VOLTAGE: 0 V ELEMENT TEMPERATURE: -196 ˚C S 102 N 101 100 102 103 104 105 106 10 Ω 1Ω -40 -20 0 20 40 ELEMEMT TEMPERATURE (˚C) CHOPPING FREQUENCY (Hz) KIRDB0064ED 2 100 Ω KIRDB0182EA P8079 series, P7163 InAs photovoltaic detector ■ Current vs. voltage of TE-cooled type 1.6 ■ Cooling characteristics of TE-cooled type (Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W) CURRENT (A) 1.2 ELEMENT TEMPERATURE (˚C) 1.4 ONE-STAGE TE-COOLED 1.0 0.8 TWO-STAGE TE-COOLED 0.6 0.4 (Typ. Ta=25 ˚C, thermal resistance of heat-sink=3 ˚C/W) 30 20 10 ONE-STAGE TE-COOLED TYPE 0 -10 -20 -30 TWO-STAGE TE-COOLED TYPE -40 0.2 -50 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.4 0.8 1.2 1.6 TE-COOLED CURRENT (A) VOLTAGE (V) KIRDB0115EB KIRDB0181EA ■ Thermistor temperature characteristic (Typ.) 6 RESISTANCE (Ω) 10 105 104 103 -40 -20 0 20 ELEMENT TEMPERATURE (˚C) KIRDB0116EA ■ Measurement circuit CHOPPER 1200 Hz DETECTOR BAND-PASS FILTER BLACK BODY 500 K r.m.s. METER fo=1200 Hz ∆f=120 Hz INCIDENT ENERGY: 2.64 µW/cm2 KIRDC0004EA 3 P8079 series, P7163 InAs photovoltaic detector ■ Dimensional outlines (unit: mm) ➀ P8079-01 ➁ P8079-11/-21 9.1 ± 0.3 15.3 ± 0.2 8.1 ± 0.1 WINDOW 5.5 ± 0.1 10 ± 0.2 4.3 ± 0.2 2.3 ± 0.2 PHOTOSENSITIVE SURFACE 12 MIN. 0.45 LEAD 18 MIN. 0.4 MAX. a PHOTOSENSITIVE SURFACE 14 ± 0.2 WINDOW 10 ± 0.2 0.45 LEAD 5.1 ± 0.2 10.2 ± 0.2 1.0 MAX. 5.1 ± 0.2 DETECTOR (ANODE) DETECTOR (CATHODE) TE-COOLER (-) TE-COOLER (+) THERMISTOR P8079-11 P8079-21 CASE a 5.1 ± 0.2 4.5 ± 0.2 6.9 ± 0.2 KIRDA0119EA KIRDA0120EA ■ Spectral response ➂ P7163 (Typ.) 1012 D* (λ,1200,1) (cm · Hz1/2/W) 44.5 ± 1 46 ± 1 32 ± 1 51 ± 1 LN2 FILL PORT 12.5 63.5 ± 1 28.5 1010 109 66.8 ± 1 P8079-11 (T= -10 ˚C) P8079-01 (T=25 ˚C) 108 1.5 10 ± 1 10 ± 0.5 P7163 (T= -196 ˚C) P8079-21 (T= -30 ˚C) 172 ± 2 95 ± 1 102 ± 1 6.5 OUTPUT PIN 37 ± 1 PHOTOSENSITIVE SURFACE 72 ± 1 PUMP-OUT PIPE 9.5 1011 2.0 2.5 3.0 3.5 4.0 WAVELENGTH (µm) KIRDB0358EA DETECTOR (ANODE) NC DETECTOR (CATHODE) KIRDA0033ED Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KIRD1027E06 4 Mar. 2007 DN