g6742 series kird1016e

PHOTODIODE
InGaAs PIN photodiode
G6742 series
Surface-mount type
Features
Applications
l Small chip carrier package
l High reliability
l Low price
l Laser diode monitors
■ General ratings
Parameter
Package
Active area
G6742-003
■ Absolute maximum ratings
Parameter
Symbol
Reverse voltage
VR Max.
Operating
Topr
temperature
Storage temperature
Tstg
* No condensation
φ0.3
φ1.0
Unit
mm
G6742-003
20
G6742-01
10
Unit
V
■ Electrical and optical characteristics (Ta=25 °C)
Parameter
Spectral response
range
Peak sensitivity
wavelength
-40 to +85 *
°C
-55 to +125 *
°C
Min.
G6742-003
Typ.
Max.
Min.
G6742-01
Typ.
Max.
λ
-
0.9 to 1.7
-
-
0.9 to 1.7
-
µm
λp
-
1.55
-
-
1.55
-
µm
0.8
0.85
-
0.9
0.95
0.3
1.5
0.8
0.85
-
0.9
0.95
1
5
-
300
-
-
35
-
MHz
-
10
-
-
90
-
pF
-
1000
5 × 1012
-
-
100
5 × 1012
-
MΩ
cm · Hz1/2/W
-
4 × 10-15
-
-
2 × 10-14
-
W/Hz1/2
Symbol
Condition
Rsh
D∗
λ=1.3 µm
λ=1.55 µm
VR=5 V
VR=5 V, RL=50 Ω
-3 dB
f=1 MHz
VR=5 V
VR=10 mV
λ=λp
NEP
λ=λp
Photo sensitivity
S
Dark current
ID
Cut-off frequency
fc
Terminal
capacitance
Shunt resistance
Detectivity
Noise equivalent
power
G6742-01
Ceramic base
Ct
Unit
A/W
nA
InGaAs PIN photodiode
■ Photo sensitivity temperature
characteristic
■ Spectral response
(Typ. Ta=25 ˚C)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
100 nA
1
0
-1
0.8
2.0
1.0
1.2
1.4
1.6
10 pA
0.01
1.8
0.1
1
10
100
REVERSE VOLTAGE (V)
WAVELENGTH (µm)
■Terminal capacitance vs.
reverse voltage
KIRDB0042EA
KIRDB0150EA
■ Shunt resistance vs. ambient temperature
(Typ. Ta=25 ˚C, f=1 MHz)
10 nF
100 GΩ
1 nF
10 GΩ
SHUNT RESISTANCE
TERMINAL CAPACITANCE
G6742-01
1 nA
G6742-003
KIRDB0002EB
G6742-01
10 pF
G6742-003
1 pF
100 fF
0.01
10 nA
100 pA
WAVELENGTH (µm)
100 pF
(Typ. Ta=25 ˚C)
1 µA
DARK CURRENT
0.5
■ Dark current vs. reverse voltage
(Typ. Ta=25 ˚C)
2
TEMPERATURE COEFFICIENT (%/˚C)
PHOTO SENSITIVITY (A/W)
1
G6742 series
(Typ. VR=10 mV)
G6742-003
1 GΩ
100 MΩ
G6742-01
10 MΩ
0.1
1
10
1 MΩ
-40
100
-20
0
20
40
60
80
100
AMBIENT TEMPERATURE (˚C)
REVERSE VOLTAGE (V)
KIRDB0209EA
KIRDB0210EA
■ Dimensional outlines (unit: mm, tolerance: ±0.1)
G6742-003
G6742-01
0.6 MAX.
0.6 MAX.
2.0
0.2
ACTIVE AREA
1
0.3
2.0
0.2
4.0
2.6
0.5
2.6
0.2
0.15
0.3
2.0
0.3
0.2
4.0
ACTIVE AREA
0.3
0.3
1.7
0.5
0.15
0.2
0.5
0.15
1.7
0.5
0.15
ANODE
CATHODE
GOLD PLATING PART
2.0
ANODE
CATHODE
GOLD PLATING PART
KIRDA0057EA
KIRDA0058EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KIRD1016E01
Mar. 2001 DN