PHOTODIODE InGaAs PIN photodiode G6742 series Surface-mount type Features Applications l Small chip carrier package l High reliability l Low price l Laser diode monitors ■ General ratings Parameter Package Active area G6742-003 ■ Absolute maximum ratings Parameter Symbol Reverse voltage VR Max. Operating Topr temperature Storage temperature Tstg * No condensation φ0.3 φ1.0 Unit mm G6742-003 20 G6742-01 10 Unit V ■ Electrical and optical characteristics (Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength -40 to +85 * °C -55 to +125 * °C Min. G6742-003 Typ. Max. Min. G6742-01 Typ. Max. λ - 0.9 to 1.7 - - 0.9 to 1.7 - µm λp - 1.55 - - 1.55 - µm 0.8 0.85 - 0.9 0.95 0.3 1.5 0.8 0.85 - 0.9 0.95 1 5 - 300 - - 35 - MHz - 10 - - 90 - pF - 1000 5 × 1012 - - 100 5 × 1012 - MΩ cm · Hz1/2/W - 4 × 10-15 - - 2 × 10-14 - W/Hz1/2 Symbol Condition Rsh D∗ λ=1.3 µm λ=1.55 µm VR=5 V VR=5 V, RL=50 Ω -3 dB f=1 MHz VR=5 V VR=10 mV λ=λp NEP λ=λp Photo sensitivity S Dark current ID Cut-off frequency fc Terminal capacitance Shunt resistance Detectivity Noise equivalent power G6742-01 Ceramic base Ct Unit A/W nA InGaAs PIN photodiode ■ Photo sensitivity temperature characteristic ■ Spectral response (Typ. Ta=25 ˚C) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 100 nA 1 0 -1 0.8 2.0 1.0 1.2 1.4 1.6 10 pA 0.01 1.8 0.1 1 10 100 REVERSE VOLTAGE (V) WAVELENGTH (µm) ■Terminal capacitance vs. reverse voltage KIRDB0042EA KIRDB0150EA ■ Shunt resistance vs. ambient temperature (Typ. Ta=25 ˚C, f=1 MHz) 10 nF 100 GΩ 1 nF 10 GΩ SHUNT RESISTANCE TERMINAL CAPACITANCE G6742-01 1 nA G6742-003 KIRDB0002EB G6742-01 10 pF G6742-003 1 pF 100 fF 0.01 10 nA 100 pA WAVELENGTH (µm) 100 pF (Typ. Ta=25 ˚C) 1 µA DARK CURRENT 0.5 ■ Dark current vs. reverse voltage (Typ. Ta=25 ˚C) 2 TEMPERATURE COEFFICIENT (%/˚C) PHOTO SENSITIVITY (A/W) 1 G6742 series (Typ. VR=10 mV) G6742-003 1 GΩ 100 MΩ G6742-01 10 MΩ 0.1 1 10 1 MΩ -40 100 -20 0 20 40 60 80 100 AMBIENT TEMPERATURE (˚C) REVERSE VOLTAGE (V) KIRDB0209EA KIRDB0210EA ■ Dimensional outlines (unit: mm, tolerance: ±0.1) G6742-003 G6742-01 0.6 MAX. 0.6 MAX. 2.0 0.2 ACTIVE AREA 1 0.3 2.0 0.2 4.0 2.6 0.5 2.6 0.2 0.15 0.3 2.0 0.3 0.2 4.0 ACTIVE AREA 0.3 0.3 1.7 0.5 0.15 0.2 0.5 0.15 1.7 0.5 0.15 ANODE CATHODE GOLD PLATING PART 2.0 ANODE CATHODE GOLD PLATING PART KIRDA0057EA KIRDA0058EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KIRD1016E01 Mar. 2001 DN