InGaAs PIN photodiodes G6849 series Quadrant type Features Applications Photosensitive area G6849 : φ2 mm quadrant element G6849-01: φ1 mm quadrant element Light spot position detection Measurement equipment Low noise High reliability Structure Parameter Photosensitive area Number of elements Package Window material G6849 φ2/quadrant G6849-01 φ1/quadrant 4 TO-5 Borosilicate glass Unit mm - Value 5 -40 to +85 -55 to +125 260 °C or less, within 10 s Unit V °C °C - Absolute maximum ratings (Ta=25 °C) Parameter Reverse voltage Operating temperature Storage temperature Soldering condition Symbol VR Topr Tstg - Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Ta=25 °C, per 1 element) Parameter Symbol Spectral response range Peak sensitivity wavelength λ λp Photosensitivity S Dark current Temperature coefficient of ID Cutoff frequency Terminal capacitance Shunt resistance Detectivity Noise equivalent power ID ΔTID fc Ct Rsh D* NEP Condition Min. 0.8 0.85 - λ=1.3 μm λ=1.55 μm VR=1 V VR=1 V VR=1 V, RL=50 Ω 15 λ=1.3 μm, -3 dB VR=1 V, f=1 MHz VR=10 mV 10 1 × 1012 λ=λp λ=λp G6849 Typ. 0.9 to 1.7 1.55 0.9 0.95 0.5 1.09 Max. 5 - Min. 0.8 0.85 - G6849-01 Typ. 0.9 to 1.7 1.55 0.9 0.95 0.15 1.09 Max. 1.5 - nA times/°C 30 - 80 120 - MHz 100 50 5 × 1012 2 × 10-14 160 6 × 10-14 80 1 × 1012 - 25 200 5 × 1012 1 × 10-14 Unit μm μm A/W 40 pF MΩ cm·Hz1/2/W 4 × 10-14 W/Hz1/2 The G6849 series may be damaged by Electro Static Discharge. Be carefull when using the G6849 series. www.hamamatsu.com 1 InGaAs PIN photodiodes G6849 series Spectral response Photosensitivity temperature characteristics (Typ. Ta=25 °C) Photosensitivity (A/W) 0.8 0.6 0.4 0.2 0 0.6 0.8 1.0 1.2 1.4 1.6 1.8 (Typ. Ta=25 °C) 2 Temperature coefficient (%/°C) 1 1 0 -1 0.8 2.0 1.0 1.2 1.4 1.6 Wavelength (µm) Wavelength (µm) KIRDB0042EA KKIRDB0002EB Dark current vs. reverse voltage Terminal capacitance vs. reverse voltage (Typ. Ta=25 °C) 1 µA 1.8 (Typ. Ta=25 °C, f=1 MHz) 10 nF Terminal capacitance Dark current 100 nA 10 nA G6849 1 nA 1 nF G6849 100 pF 10 pF 100 pA 10 pA 0.01 G6849-01 G6849-01 0.1 1 10 100 Reverse voltage (V) 1 pF 0.01 0.1 1 10 Reverse voltage (V) KMIRB0016EC KMIRB0015EC 2 InGaAs PIN photodiodes G6849 series Shunt resistance vs. ambient temperature (Typ. VR=10 mV) 100 GΩ Shunt resistance 10 GΩ 1 GΩ G6849-01 100 MΩ G6849 10 MΩ 1 MΩ -40 -20 0 40 20 60 80 100 Ambient temperature (°C) KMIRB0014EA Dimensional outlines (unit: mm) G6849-01 G6849 Photosensitive area 9.1 ± 0.2 9.1 ± 0.2 8.1 ± 0.1 8.1 ± 0.2 Window 5.9 ± 0.1 Photosensitive area 2 Window 5.9 ± 0.2 1 C C D D B A A 03 0. 5.84 ± 0.2 4.1 ± 0.2 0.45 Lead (2.5 ± 0.3) Photosensitive surface +1.5 13.0 -1.0 4.1 ± 0.2 Details of photodiode 0.8 ± 0.5 (2.5 ± 0.3) +1.5 13.0 -1.0 0.45 Lead 0.8 ± 0.5 1 0. Photosensitive surface B Details of photodiode 5.84 ± 0.2 3.5 ± 0.5 Anode A NC Anode B NC Anode C NC Anode D Cathode (common) 3.5 ± 0.5 Anode A NC Anode B NC Anode C NC Anode D Cathode (common) KIRDA0059EB KIRDA0143EB 3 InGaAs PIN photodiodes G6849 series Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Notice ∙ Metal, ceramic, plastic products/Precautions Technical information ∙ Infrared detector/Technical information Information described in this material is current as of October, 2013. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KIRD1042E04 Oct. 2013 DN 4