g8909-01 kird1053e

InGaAs PIN photodiode array
G8909-01
Photodiode array for DWDM monitor
Features
Applications
250 μm pitch, 40 ch parallel readout
DWDM monitor with AWG
Low crosstalk
Precise chip position tolerance: ±0.05 mm
Structure
Parameter
Photosensitive area
Value
φ0.08
Unit
mm
Pixel pitch
Number of elements
250
40
μm
ch
Absolute maximum ratings
Parameter
Reverse voltage
Incident light level
Operating temperature
Symbol
VR max
Pin
Topr
Storage temperature
Tstg
Value
6
10
-40 to +85*
-40 to +85*
Unit
V
mW
°C
°C
* In N2 environment or in vacuum
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
Electrical and optical characteristics (Ta=25 °C, per 1 element)
Parameter
Spectral response range
Photosensitivity
Symbol
λ
S
Photoresponse nonuniformity
Dark current
Shunt resistance
Terminal capacitance
Crosstalk
PRNU
ID
Rsh
Ct
-
Condition
λ=1.31 μm
λ=1.55 μm
VR=5 V
VR=10 mV
VR=5 V, f=1 MHz
VR=0.1 V
Min.
0.8
0.85
-
Typ.
0.9 to 1.7
0.9
0.95
0.02
8
1.4
-33
Max.
±5
0.2
-
Unit
μm
A/W
%
nA
GΩ
pF
dB
The G8909-01 may be damaged by Electro Static Discharge, etc. Be carefull when using the G8909-01.
www.hamamatsu.com
1
InGaAs PIN photodiode array
G8909-01
Spectral response
Dark current vs. reverse voltage
(Typ. Ta=25 °C)
(Typ. Ta=25 °C)
1 nA
100 pA
Dark current
Photosensitivity (A/W)
1
0.5
10 pA
0.6
0.8
1.0
1.2
1.4
1.6
1 pA
0.01
2.0
1.8
0.1
Wavelength (µm)
1
10
100
Reverse voltage (V)
KIRDB0002EB
KIRDB0266EA
Terminal capacitance vs. reverse voltage
(Typ. Ta=25 °C, f=1 MHz)
10 pF
(Typ. VR=5 V)
100 nA
10 nA
Dark current
Terminal capacitance
Dark current vs. ambient temperature
1 pF
1 nA
100 pA
100 fF
0.01
0.1
1
10
100
Reverse voltage (V)
10 pA
20
30
40
50
60
70
80
Ambient temperature (°C)
KIRDB0267EA
KIRDB0268EA
2
InGaAs PIN photodiode array
G8909-01
Crosstalk characteristic
100
(Typ. Ta=25 °C, λ=1.55 µm, light spot size= 20 µm, Pin=5 nW, VR=0.1 V)
250 µm
Light spot
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Relative sensitivity (%)
X
10
1
0.1
0.01
-250
-200
-150
-100
-50
0
Position X (µm)
KIRDB0269EB
Dimensional outline (unit: mm)
Anode pad
(pitch: 400 µm, 40 ch,
150 × 150 µm bond pads)
22.0
0.4
(0.1)
0.5
Cathode pad
0.8
2.5
2.1
Detail A
(0.15)
10.5
0.70 ± 0.05*
2.0
0.80
A
* The center of the photosensitive
area to the bottom of the substrate
KIRDA0158EA
Information described in this material is current as of February, 2012.
Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact
us for the delivery specification sheet to check the latest information.
Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or
a suffix "(Z)" which means developmental specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product
use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No. KIRD1053E03 Feb. 2012 DN
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