Si PIN photodiode S12271 Large area, high-speed PIN photodiode for UV to near IR photometry The S12271 is a high-speed Si PIN photodiode having a large photosensitive area of φ4.1 mm. Using quartz glass as the light input window, this photodiode delivers high sensitivity extending to the UV region and is suitable for optical power meters. Features Applications Quartz glass window Optical power meters High UV sensitivity Radiation detectors Large photosensitive area: φ4.1 mm High-speed response: 60 MHz (VR=100 V) Structure Parameter Package Photosensitive area size Effective photosensitive area Specification TO-8 φ4.1 13.2 Unit mm mm mm2 Absolute maximum ratings Parameter Reverse voltage Power dissipation Operating temperature Storage temperature Symbol VR max P Topr Tstg Specification 120 50 -20 to +60 -55 to +80 Unit V mW °C °C Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Photosensitivity Dark current Temperature coefficient of ID Terminal capacitance Cutoff frequency Noise equivalent power Symbol λ λp S ID TCID Ct fc NEP Condition λ=λp λ=200 nm VR=100 V VR=100 V, f=1 MHz VR=100 V, RL=50 Ω -3 dB λ=λp, VR=100 V Min. 0.4 0.08 - Typ. 190 to 1100 960 0.5 0.10 0.1 1.15 10 Max. 30 20 Unit nm nm A/W A/W nA times/°C pF - 60 - MHz - 1.5 × 10-14 - W/Hz1/2 www.hamamatsu.com 1 Si PIN photodiode S12271 Spectral response Photosensitivity temperature characteristics (Typ. Ta=25 °C) 0.6 (Typ.) +2.0 Temperature coefficient (%/°C) QE=100% Photosensitivity (A/W) 0.5 0.4 0.3 0.2 0.1 +1.5 +1.0 +0.5 0 -0.5 -1.0 190 300 400 500 600 700 800 900 1000 1100 0 190 300 400 500 600 700 800 900 1000 1100 Wavelength (nm) Wavelength (nm) KPINB0386EA KPINB0387EA Dark current vs. reverse voltage Terminal capacitance vs. reverse voltage (Typ. Ta=25 °C) 10 nA Terminal capacitance Dark current 1 nA 100 pA 1 nF 100 pF 10 pF 10pA 1 pA 0.01 (Typ. Ta=25 °C) 10 nF 0.1 1 10 100 1 pF 0.1 1 10 100 Reverse voltage (V) Reverse voltage (V) KPINB0388EA KPINB0389EA 2 Si PIN photodiode S12271 Dimensional outline (unit: mm) 13.9 ± 0.2 10.5 ± 0.1 X 12.35 ± 0.1 Y 0.5 max. 2.8 ± 0.2 Quartz glass Photosensitive surface (15) 5.0 ± 0.2 Photosensitive area 4.1 ġġġ0.45 Lead 7.5 ± 0.2 Index mark ( 1.4) 1.0 max. Case Distance from photosensitive area center to cap center -0.4≤X≤+0.4 -0.4≤Y≤+0.4 KPINA0114EA Information described in this material is current as of November, 2012. Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact us for the delivery specification sheet to check the latest information. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KPIN1085E02 Nov. 2012 DN 3