IMAGE SENSOR NMOS linear image sensor S3901-FX series Image sensor highly sensitive to X-rays from 10 k to 100 keV NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning circuit is made up of N-channel MOS transistors, has low power consumption and is easy to handle. Each photodiode has a large active area, high UV sensitivity yet very low noise, delivering a high S/N even at low light levels. Current output type NMOS linear image sensors also offer excellent output linearity and wide dynamic range. S3901-FX series image sensors are variants of S3901-F series NMOS image sensors. Having a phosphor-coated fiber optic plate (FOP) as the light input window, the S3901-FX series was developed for detection of X-rays and electrons. The S3901-FX offers particularly high sensitivity to X-rays from 10 k to 100 keV. The phosphor material used is gadolinium ox sulfide (Gd2O 2S · Tb) whose composition is carefully selected to provide optimum sensitivity and resolution with a peak emission at 550 nm wavelength. The S3901-FX series active area consists of a photodiode array with pixels formed at 50 µm pitches and a height of 2.5 mm. The number of pixels can be selected from 256 or 512. Hamamatsu S3904 series NMOS linear image sensors are also available with FOP windows coated with the same phosphor material as S3901FX series. Using photodiodes with no phosphor and FOP window also allows direct detection of X-rays at energy levels below 10 keV. Features Applications l Wide active area Pixel pitch: 50 µm Pixel height: 2.5 mm l Low dark current and high saturation charge allow a long integration time and a wide dynamic range at room temperature l Excellent output linearity and sensitivity spatial uniformity l Low power consumption: 1 mW max. l Start pulse and clock pulse are CMOS logic compatible ■ Equivalent circuit 1 Clock 2 Degital shift register (MOS shift register) End of scan 2.5 mm st ■ Active area structure Active video Active photodiode 45 µm Vss 50 µm Saturation control gate Saturation control drain Dummy video Phosphor material Fiber optic plate Dummy diode 1.0 µm Start Clock l Test equipment using X-ray and electron beam transmission l X-ray non-destructive inspection l X-ray and electron beam detector Oxidation silicon 1.0 µm N type silicon 400 µm KMPDC0020EA P type silicon KMPDC0008EA ■ Absolute maximum ratings Parameter Input pulse (φ1, φ2, φst) voltage Power consumption*1 Operating temperature*2 Storage temperature Symbol Vφ P Topr Tstg Value 15 1 -30 to +60 -40 to +80 Unit V mW °C °C *1: Vφ=5.0 V *2: No condensation 1 NMOS linear image sensor S3901-FX series ■ Shape specifications Parameter Number of pixels Package length Number of pin Window material*3 S3901-256FX 256 31.75 S3901-512FX 512 40.6 Unit mm 22 Fiber optic plate Weight 8.0 10.0 g *3: To prevent unwanted effects from stray light, S3901-FX series is supplied with an aluminum cover fitted on the phosphorcoated FOP. ■ Specifications (Ta=25 °C) Parameter Pixel pitch Pixel height S pectral response range (20% of peak) Photo sensitivity Photodiode dark current*4 Photodiode capacitance*4 Saturation exposure*4 Saturation output charge*4 Photo response non-uniformity*5 Symbol λ S ID Cph Esat Qsat PRNU Min. - Typ. 50 2.5 10 to 100 0.013 0.2 20 4 50 - - Max. 0.6 ±10 Unit µm mm keV pC/mR pA pF R pC % *4: Vb=2.0 V, Vφ=5.0 V *5: Measured under the following conditions including uniformity in the phosphor emission (but excluding dark current components). X-ray tube voltage: 40 kV, tube current: 3 mA Distance between S3901-FX series and X-ray tube: 4 cm Phosphor material: Gd2O2S . Tb (thickness=200 µm, λp=550 nm, decay time=1 ms) ■ Electrical characteristics (Ta=25 °C) Parameter Symbol High Vφ1, Vφ2 (H) C lock p ulse (φ1 , φ2 ) volta g e Low Vφ1, Vφ2 (L) High Vφs (H) Start pulse (φst) voltage Low Vφs (L) Video bias voltage*6 Vb Saturation control gate voltage Vscg Saturation control drain voltage Vscd trφ1, trφ2 7 C lock pulse (φ1, φ2) rise / fall tim e* tfφ1, tfφ2 Clock pulse (φ1, φ2) pulse width tpwφ1, tpwφ2 Start pulse (φst) rise / fall time trφs, tfφs Start pulse (φst) pulse width tpwφs Start pulse (φst) and clock pulse tφov (φ2) overlap 7 Clock pulse space* X1, X 2 Data rate*8 f Condition Video delay time tvd 50% of 8 9 saturation* * Clock pulse (φ1, φ2) line capacitance Cφ 5 V bias Cscg 5 V bias CV 2 V bias Saturation control gate (Vscg) line capacitance Video line capacitance Min. 4.5 0 4.5 0 1.5 - Typ. 5 Vφ1 Vφ - 3.0 0 Vb Max. 10 0.4 10 0.4 Vφ - 2.5 - Unit V V V V V V V - 20 - ns 200 200 20 - - ns ns ns 200 - - ns trf - 20 0.1 - 2000 ns kHz - 120 (-256 FX) - ns - 160 (-512 FX) - ns - 36 67 20 35 11 20 - pF pF pF pF pF pF (-256 (-512 (-256 (-512 (-256 (-512 FX) FX) FX) FX) FX) FX) *6 : V φ is in p u t p u lse v olta g e *7 : trf is th e clo ck p u lse rise o r fall tim e . A clo ck p u lse sp a ce o f “rise tim e /fall tim e - 2 0 ” n s (n a n o se co n d s) o r m o re sh o u ld b e in p u t if th e clo c k p u ls e ris e o r fa ll tim e is lo n g e r th a n 2 0 n s. *8 : V b = 2 .0 V, V φ= 5 .0 V *9 : M e a su re d w ith C 7 88 3 d riv e r circu it. 2 NMOS linear image sensor S3901-FX series ■ Dimensional outlines (unit: mm) Active area 25.6 × 2.5 12.8 ± 0.3 31.75 Chip surface 5.0 ± 0.2 5.0 ± 0.2 10.4 6.4 ± 0.3 10.4 5.4 ± 0.2 Active area 12.8 × 2.5 5.4 ± 0.2 S3901-512FX S3901-256FX 40.6 10.0 3.0 3.4 3.0 3.4 10.0 Chip surface 0.51 0.51 0.25 0.25 2.54 2.54 25.4 25.4 10.16 10.16 KMPDA0031EB KMPDA0032EB ■ Pin connection 2 1 22 NC 1 2 21 NC st 3 20 NC Vss 4 19 NC Vscg 5 18 NC NC 6 17 NC Vscd 7 16 NC Vss 8 15 NC Active video 9 14 NC Dummy video 10 13 NC Vsub 11 12 End of scan Vss, Vsub and NC should be grounded. KMPDC0056EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. Type numbers of products listed inthe specification sheets or supplied as samples may have a suffix "(X)" which means tentative specifications or a suffix "(Z)" which means developmental specifications. ©2010 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KMPD1005E06 Jul. 2010 DN