Si APD S6045/S12060 series Low temperature coefficient type APD for 800 nm band The S6045 and S12060 series are near infrared Si APDs developed for use in the 800 nm wavelength band. These APDs are designed so that the temperature coefficient of the operating voltage is low enough to ensure stable operation over a wide temperature range. They are suitable for applications such as optical rangefinders and FSO (free space optics). Features Applications Temperature coefficient of breakdown voltage: 0.4 V/°C Optical rangefinders FSO High-speed response Optical fiber communications High sensitivity and low noise Structure / Absolute maximum ratings Type no. S12060-02 S12060-05 S12060-10 S6045-04 S6045-05 S6045-06 Dimensional outline/ Window material*1 Package (1)/K TO-18 (2)/K (3)/K (4)/K Effective*2 photosensitive area size (mm) φ0.2 φ0.5 φ1.0 φ1.5 φ3.0 φ5.0 TO-5 TO-8 Operating temperature Topr (°C) -40 to +85 Absolute maximum ratings Storage temperature Soldering Tstg conditions (°C) -55 to +125 260 °C or less, within 10 s Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. *1: K=borosilicate glass *2: Area in which a typical gain can be obtained Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Type no. S12060-02 S12060-05 S12060-10 S6045-04 S6045-05 S6045-06 PhotoQuantum Breakdown Dark*3 Cutoff*3 Spectral Peak*3 Excess*3 3 voltage Temp. sensitivity efficiency current frequency Terminal* response sensitivity Gain noise VBR capacitance coefficient S QE ID fc range wavelength M figure I D =100 μA Ct of VBR M=1 M=1 λp RL=50 Ω λ x λ=800 nm λ=800 nm λ=800 nm Typ. Max. Typ. Max. λ=800 nm (nm) (nm) (A/W) (%) (V) (V) (V/°C) (nA) (nA) (MHz) (pF) 0.05 0.5 1000 1.5 0.1 1 900 2.5 100 0.2 2 600 6 400 to 1000 800 0.5 75 200 300 0.4 0.3 0.5 5 350 12 1 10 80 50 60 3 30 35 120 40 *3: Values measured at a gain listed in the characteristics table www.hamamatsu.com 1 Si APD S6045/S12060 series Spectral response Quantum efficiency vs. wavelength (Typ. Ta=25 °C, M at 800 nm) M=100 80 Quantum efficiency (%) 40 Photo sensitivity (A/W) (Typ. Ta=25 °C) 90 50 30 20 10 70 60 50 40 30 20 10 M=50 0 200 300 400 500 600 700 800 900 1000 1100 0 200 300 400 500 600 700 800 900 1000 1100 Wavelength (nm) Wavelength (nm) KAPDB0026EA KAPDB0027EA Dark current vs. reverse voltage Gain vs. reverse voltage (Typ. Ta=25 °C) 10 nA (Typ. λ=800 nm) 104 -20 °C S6045-05 103 1 nA 0 °C S6045-06 Gain Dark current S6045-04 100 pA 20 °C 102 S12060-10 10 pA 40 °C 101 S12060-05 60 °C S12060-02 1 pA 0 50 100 150 200 250 Reverse voltage (V) 100 160 180 200 220 240 260 Reverse voltage (V) KAPDB0028EB KAPDB0029EC 2 Si APD S6045/S12060 series Terminal capacitance vs. reverse voltage (Typ. Ta=25 °C, f=1 MHz) 1 nF Terminal capacitance S6045-06 100 pF S6045-05 S6045-04 S12060-10 10 pF S12060-02 S12060-05 1 pF 0 50 100 150 200 250 Reverse voltage (V) KAPDB0030EB Dimensional outlines (unit: mm) (1) S12060-02/-05/-10 (2) S6045-04 5.4 ± 0.1 0.45 Lead 4.7 ± 0.2 (13.5) 0.45 Lead Photosensitive surface 2.6 ± 0.2 Photosensitive surface (20) Window 3.0 min. 0.4 max. 8.2 ± 0.1 3.7 ± 0.2 2.8 ± 0.2 4.7 ± 0.1 Window 2.0 min. 9.1 ± 0.2 5.08 ± 0.2 2.54 ± 0.2 1.5 max. Distance from photosensitive area center to cap center -0.2≤X≤+0.2 -0.2≤Y≤+0.2 Case The glass window may extend a maximum of 0.2 mm above the upper surface of the cap. KAPDA0137EA Case Distance from photosensitive area center to cap center -0.3≤X≤+0.3 -0.3≤Y≤+0.3 KAPDA0011EC 3 Si APD S6045/S12060 series 12.35 ± 0.1 Window 10.5 ± 0.1 0.5 max. 0.45 Lead Photosensitive surface (20) 0.4 max. Photosensitive surface 0.45 Lead 5.08 ± 0.2 7.5 ± 0.2 (15) 8.1 ± 0.1 Window 5.9 ± 0.1 4.2 ± 0.2 13.9 ± 0.2 2.6 ± 0.2 9.1 ± 0.2 4.9 ± 0.2 (4) S6045-06 2.9 ± 0.2 (3) S6045-05 Index mark 1.4 1.5. max. Distance from photosensitive area center to cap center -0.3≤X≤+0.3 -0.3≤Y≤+0.3 Case 1.0 max. The glass window may extend a maximum of 0.2 mm above the upper surface of the cap. Case Distance from photosensitive area center to cap center -0.4≤X≤+0.4 -0.4≤Y≤+0.4 The glass window may extend a maximum of 0.2 mm above the upper surface of the cap. KAPDA0012EC KAPDA0139EA Replacements for previous products Previous product (listed on the previous datasheet) S6045-01 S6045-02 S6045-03 Replacement (listed on this datasheet) S12060-02 S12060-05 S12060-10 * Products that have been removed from this datasheet 4 Si APD S6045/S12060 series Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Notice ∙ Metal, ceramic, plastic package products / Precautions Technical information ∙ Si APD / Technical information Information described in this material is current as of October, 2013. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KAPD1005E06 Oct. 2013 DN 5