VS-VSK.41.., VS-VSK.56.. Series Datasheet

VS-VSK.41.., VS-VSK.56.. Series
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Vishay Semiconductors
ADD-A-PAK Generation VII Power Modules
Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A
FEATURES
• High voltage
• Industrial standard package
• Low thermal resistance
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
ADD-A-PAK
• Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate
PRODUCT SUMMARY
• Up to 1600 V
IT(AV) or IF(AV)
45 A/60 A
Type
Modules - Thyristor, Standard
• High surge capability
• Easy mounting on heatsink
MECHANICAL DESCRIPTION
ELECTRICAL DESCRIPTION
The ADD-A-PAK generation VII, new generation of
ADD-A-PAK module, combines the excellent thermal
performances obtained by the usage of exposed direct
bonded copper substrate, with advanced compact simple
package solution and simplified internal structure with
minimized number of interfaces.
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS, and battery charger.

MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
VS-VSK.41
VS-VSK.56
IT(AV) or IF(AV)
85 °C
45
60
IO(RMS)
As AC switch
100
135
ITSM,
IFSM
50 Hz
850
1200
60 Hz
890
1256
I2t
CHARACTERISTICS
A
50 Hz
3.61
7.20
60 Hz
3.30
6.57
36.1
72
kA2s
400 to 1600
400 to 1600
V
I2t
VRRM
UNITS
Range
kA2s
TStg
-40 to 125
°C
TJ
-40 to 125
°C
Revision: 21-Mar-14
Document Number: 94630
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ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
VDRM, MAXIMUM REPETITIVE
PEAK OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
04
400
500
400
06
600
700
600
08
800
900
800
10
1000
1100
1000
12
1200
1300
1200
14
1400
1500
1400
16
1600
1700
1600
VS-VSK.41
VS-VSK.56
IRRM, IDRM
AT 125 °C
mA
15
ON-STATE CONDUCTION
PARAMETER
SYMBOL
Maximum average on-state current (thyristors)
IT(AV)
Maximum average forward current (diodes)
IF(AV)
Maximum continuous RMS on-state current,
as AC switch
TEST CONDITIONS
VSK.41 VSK.56
180° conduction, half sine wave,
TC = 85 °C
I(RMS)
IO(RMS)
or
I(RMS)
45
60
100
135
UNITS
A
t = 10 ms
Maximum peak, one-cycle non-repetitive
on-state or forward current
ITSM
or
IFSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
I2t
Maximum value or threshold voltage
Maximum value of on-state 
slope resistance
Maximum peak on-state or forward voltage
Maximum non-repetitive rate of rise of
turned on current
I2t (1)
VT(TO) (2)
rt (2)
100 % VRRM
reapplied
Sinusoidal
half wave,
initial TJ =
TJ maximum
850
1200
890
1256
715
1000
750
1056
3.61
7.20
3.30
6.57
2.56
5.10
2.33
4.56
t = 0.1 ms to 10 ms, no voltage reapplied 
TJ = TJ maximum
36.1
72
Low level (3)
1.08
0.91
1.12
1.02
4.7
4.27
4.5
3.77
1.81
1.7
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I2t for fusing
No voltage
reapplied
High level (4)
Low level (3)
High level (4)
No voltage
reapplied
100 % VRRM
reapplied
Initial TJ =
TJ maximum
TJ = TJ maximum
TJ = TJ maximum
VTM
ITM =  x IT(AV)
VFM
IFM =  x IF(AV)
dI/dt
TJ = 25 °C, from 0.67 VDRM,
ITM =  x IT(AV), Ig = 500 mA, tr < 0.5 μs, tp > 6 μs
150
200
TJ = 25 °C
Maximum holding current
IH
TJ = 25 °C, anode supply = 6 V,
resistive load, gate open circuit
Maximum latching current
IL
TJ = 25 °C, anode supply = 6 V, resistive load
400
kA2s
kA2s
V
m
V
A/μs
mA
400
Notes
(1) I2t for time t = I2t x t
x
x
(2) Average power = V
2
T(TO) x IT(AV) + rt x (IT(RMS))
(3) 16.7 % x  x I
AV < I <  x IAV
(4) I >  x I
AV
Revision: 21-Mar-14
Document Number: 94630
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TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
TEST CONDITIONS
VS-VSK.41 VS-VSK.56
PGM
10
PG(AV)
2.5
IGM
2.5
- VGM
10
Maximum gate current required to trigger
VGT
IGT
W
A
4.0
TJ = -40 °C
Maximum gate voltage required to trigger
UNITS
Anode supply = 6 V
resistive load
TJ = 25 °C
TJ = 125 °C
1.7
TJ = -40 °C
270
Anode supply = 6 V
resistive load
TJ = 25 °C
V
2.5
mA
150
TJ = 125 °C
80
Maximum gate voltage that will not trigger
VGD
TJ = 125 °C, rated VDRM applied
0.25
V
Maximum gate current that will not trigger
IGD
TJ = 125 °C, rated VDRM applied
6
mA
VS-VSK.41 VS-VSK.56
UNITS
15
mA
3000 (1 min)
3600 (1 s)
V
1000
V/μs
VS-VSK.41 VS-VSK.56
UNITS
-40 to 125
°C
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum peak reverse and off-state 
leakage current at VRRM, VDRM
IRRM,
IDRM
TJ = 125 °C, gate open circuit
Maximum RMS insulation voltage
VINS
50 Hz
Maximum critical rate of rise of off-state voltage
dV/dt
TJ = 125 °C, linear to 0.67 VDRM
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Junction operating and storage
temperature range
TEST CONDITIONS
TJ, TStg
Maximum internal thermal resistance,
junction to case per leg
RthJC
DC operation
Typical thermal resistance,
case to heatsink per module
RthCS
Mounting surface flat, smooth and
greased
0.44
°C/W
0.1
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the spread
of the compound.
to heatsink
Mounting torque ± 10 %
busbar
4
Nm
3
Approximate weight
JEDEC®
Case style
0.35
75
g
2.7
oz.
AAP GEN VII (TO-240AA)
R CONDUCTION PER JUNCTION
DEVICES
SINE HALF WAVE CONDUCTION
180°
120°
90°
60°
RECTANGULAR WAVE CONDUCTION
30°
180°
120°
90°
60°
30°
VSK.41..
0.110
0.131
0.17
0.23
0.342
0.085
0.138
0.177
0.235
0.345
VSK.56..
0.088
0.104
0.134
0.184
0.273
0.07
0.111
0.143
0.189
0.275
UNITS
°C/W
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 21-Mar-14
Document Number: 94630
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VS-VSK.41.., VS-VSK.56.. Series
Maximum average on-state power loss (W)
130
VSK.41 Series
RthJC (DC) = 0.44°C/W
120
110
100
180°
120°
90°
60°
30°
90
80
0
Maximum allowable case temperature (°C)
Vishay Semiconductors
10
20
30
40
80
180°
120°
90°
60°
30°
60
RMS limit
100
DC
40
20
VSK.41 Series
Per leg, Tj = 125°C
0
0
10
20
30
40
50
60
70
80
Average on-state current (A)
Average on-state current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - On-State Power Loss Characteristics
800
130
VSK.41 Series
RthJC (DC) = 0.44 °C/W
120
110
100
DC
180°
120°
90°
60°
30°
90
80
70
0
10
20
30
40
50
60
70
At any rated load condition and with
rated Vrrm applied following surge
Initial Tj = Tj max
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100s
700
600
500
400
Per leg
300
1
80
10
100
Number of equal amplitude half cycle current pulses (N)
Average on-state current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
900
80
180°
120°
90°
60°
30°
70
60
50
RMS limit
40
30
20
VSK.41 Series
Per leg, Tj = 125°C
10
0
0
5 10 15 20 25 30 35 40 45 50
Average on-state current (A)
Fig. 3 - On-State Power Loss Characteristics
Peak half sine wave on-state current (A)
Maximum average on-state power loss (W)
120
50
Peak half sine wave on-state current (A)
Maximum allowable case temperature (°C)
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800
700
Maximum Non-repetitive Surge Current
Versus Pulse Train Duration. Control
of conduction may not be maintaned.
Initial Tj = 125°C
No Voltage Reapplied
Rated Vrrm reapplied
600
500
400
Per leg
300
0.01
0.1
1
Pulse train duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 21-Mar-14
Document Number: 94630
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VS-VSK.41.., VS-VSK.56.. Series
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Maximum total on-state power loss (W)
160
140
RthSA = 0.1 °C/W
0.3 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
1.5 °C/W
2 °C/W
3 °C/W
5 °C/W
180°
120°
90°
60°
30°
120
100
80
60
40
VSK.41 Series
Per module
Tj = 125°C
20
0
0
20
40
60
100
0
80
Total RMS output current (A)
20
40
60
80
100 120 140
Maximum allowable ambient temperature (°C)
Fig. 7 - On-State Power Loss Characteristics
Maximum total power loss (W)
350
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
1.5 °C/W
180°
(sine)
180°
(rect)
300
250
200
∼
150
100
2 x VSK.41 Series
single phase bridge connected
Tj = 125°C
50
0
0
20
40
60
80
Total output current (A)
0
100
20
40
60
80
100 120 140
Maximum allowable ambient temperature (°C)
Fig. 8 - On-State Power Loss Characteristics
Maximum total power loss (W)
500
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
400
120°
(rect)
300
200
100
3 x VSK.41 Series
three phase bridge connected
Tj = 125°C
0
0
20
40
60
80
100 120 140
0
Total output current (A)
20
40
60
80
100 120 140
Maximum allowable ambient temperature (°C)
Fig. 9 - On-State Power Loss Characteristics
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Document Number: 94630
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VS-VSK.41.., VS-VSK.56.. Series
Maximum average on-state power loss (W)
130
VSK.56 Series
RthJC (DC) = 0.35°C/W
120
110
100
180°
120°
90°
60°
30°
90
80
0
Maximum allowable case temperature (°C)
Vishay Semiconductors
10
20
30
40
50
60
180°
120°
90°
60°
30°
120
100
DC
80
RMS limit
60
40
20
VSK.56 Series
Per leg, Tj = 125°C
0
0
20
40
60
80
100
Average on-state current (A)
Average on-state current (A)
Fig. 10 - Current Ratings Characteristics
Fig. 13 - On-State Power Loss Characteristics
1100
130
VSK.56 Series
RthJC (DC) = 0.35 °C/W
120
110
100
DC
180°
120°
90°
60°
30°
90
80
70
0
20
40
60
80
At any rated load condition and with
rated Vrrm applied following surge
Initial Tj = Tj max
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100s
1000
900
800
700
600
500
Per leg
400
1
100
10
100
Number of equal amplitude half cycle current pulses (N)
Average on-state current (A)
Fig. 11 - Current Ratings Characteristics
Fig. 14 - Maximum Non-Repetitive Surge Current
1300
100
180°
120°
90°
60°
30°
80
Peak half sine wave on-state current (A)
Maximum average on-state power loss (W)
140
70
Peak half sine wave on-state current (A)
Maximum allowable case temperature (°C)
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60
RMS limit
40
20
VSK.56 Series
Per leg, Tj = 125°C
0
0
10
20
30
40
50
60
70
Average on-state current (A)
Fig. 12 - On-State Power Loss Characteristics
1200
1100
1000
900
Maximum Non-repetitive Surge Current
Versus Pulse Train Duration. Control
of conduction may not be maintained.
Initial Tj = 125°C
No Voltage Reapplied
Rated Vrrm reapplied
800
700
600
500
400
0.01
Per leg
0.1
1
Pulse train duration (s)
Fig. 15 - Maximum Non-Repetitive Surge Current
Revision: 21-Mar-14
Document Number: 94630
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VS-VSK.41.., VS-VSK.56.. Series
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Maximum total on-state power loss (W)
250
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.4 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
1.5 °C/W
2 °C/W
4 °C/W
180°
120°
90°
60°
30°
200
150
100
50
VSK.56 Series
Per module
Tj = 125°C
0
0
20
40
60
80
100 120 140
0
Total RMS output current (A)
20
40
60
80
100 120 140
Maximum allowable ambient temperature (°C)
Fig. 16 - On-State Power Loss Characteristics
Maximum total power loss (W)
600
500
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
2 °C/W
180°
(sine)
180°
(rect)
400
∼
300
200
2 x VSK.56 Series
single phase bridge connected
Tj = 125°C
100
0
0
20
40
60
80
100 120 140
0
Total output current (A)
20
40
60
80
100 120 140
Maximum allowable ambient temperature (°C)
Fig. 17 - On-State Power Loss Characteristics
Maximum total power loss (W)
700
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
600
500
120°
(rect)
400
300
200
3 x VSK.56 Series
three phase bridge connected
Tj = 125°C
100
0
0
20 40 60 80 100 120 140 160 180
0
Total output current (A)
20
40
60
80
100 120 140
Maximum allowable ambient temperature (°C)
Fig. 18 - On-State Power Loss Characteristics
Revision: 21-Mar-14
Document Number: 94630
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1000
VSK. 41 Series
Per leg
Instantaneous on-state current (A)
Instantaneous on-state current (A)
1000
100
10
Tj = 125°C
Tj = 25°C
VSK. 56 Series
Per leg
100
10
Tj = 125°C
Tj = 25°C
1
1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Instantaneous on-state voltage (V)
Instantaneous on-state voltage (V)
Transient thermal impedance Z thJC (°C/W)
Fig. 19 - On-State Voltage Drop Characteristics
Fig. 20 - On-State Voltage Drop Characteristics
1
Steady state value
RthJC = 0.44 °C/W
RthJC = 0.35 °C/W
(DC operation)
0.1
VSK.41 Series
VSK.56 Series
Per leg
0.01
0.001
0.01
0.1
1
10
Square wave pulse duration (s)
Fig. 21 - Thermal Impedance ZthJC Characteristics
Rectangular gate pulse
a)Recommended load line for
rated di/ dt: 20 V, 30 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
<= 30% rated di/ dt: 20 V, 65 ohms
10
tr = 1 µs, tp >= 6 µs
(1) PGM = 100 W, tp = 500 µs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
(a)
(b)
TJ = -40 °C
TJ = 125 °C
1
TJ = 25 °C
Instantaneous gate voltage (V)
100
(4) (3)
(2) (1)
VGD
IGD
0.1
0.001
0.01
VSK.
IRK.41../ .56.. Series
0.1
1
Frequency Limited by PG(AV)
10
100
1000
Instantaneous gate current (A)
Fig. 22 - Gate Characteristics
Revision: 21-Mar-14
Document Number: 94630
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VS-VSK.41.., VS-VSK.56.. Series
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ORDERING INFORMATION TABLE
Device code
VS-VS
K
T
56
1
2
3
4
/
16
5
1
-
Vishay Semiconductors product
2
-
Module type
3
-
Circuit configuration (see Circuit configuration table)
4
-
Current code
5
-
41 = 45 A
Voltage code (see Voltage Ratings table) 56 = 60 A
Note
• To order the optional hardware go to www.vishay.com/doc?95172
CIRCUIT CONFIGURATION
CIRCUIT DESCRIPTION
CIRCUIT CONFIGURATION CODE
CIRCUIT DRAWING
(1)
~
VSKT
Two SCRs doubler circuit
1
+
2
T
(2)
3
4 5 7 6
(3)
G1 K1 K2 G2
(4) (5) (7) (6)
(1)
~
VSKH
SCR/diode doubler circuit, positive
control
1
+
2
H
(2)
3
4 5
(3)
G1 K1
(4) (5)
(1)
~
VSKL 1
SCR/diode doubler circuit, negative
control
2
L
+
(2)
3
7 6
(3)
K2 G2
(7) (6)
(1)
-
VSKN
SCR/diode common anodes
1
2
N
+
(2)
3
4 5
+
(3)
G1 K1
(4) (5)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95368
Revision: 21-Mar-14
Document Number: 94630
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Outline Dimensions
Vishay Semiconductors
ADD-A-PAK Generation VII - Thyristor
DIMENSIONS in millimeters (inches)
29 ± 0.5
(1 ± 0.020)
30 ± 0.5
(1.18 ± 0.020)
35 REF.
18 (0.7) REF.
30 ± 1 (1.18 ± 0.039)
15.5 ± 0.5
(0.6 ± 0.020)
24 ± 0.5
(1 ± 0.020)
Viti M5 x 0.8
Screws M5 x 0.8
6.7 ± 0.3 (0.26 ± 0.012)
Fast-on tab 2.8 x 0.8 (0.110 x 0.03)
Document Number: 95368
Revision: 11-Nov-08
20 ± 0.5 (0.79 ± 0.020)
20 ± 0.5 (0.79 ± 0.020)
92 ± 0.75 (3.6 ± 0.030)
5.8 ± 0.25 (0.228 ± 0.010)
15 ± 0.5 (0.59 ± 0.020)
For technical questions, contact: [email protected]
4 ± 0.2 (0.157 ± 0.008)
7 6
4 5
3
2
1
6.3 ± 0.2 (0.248 ± 0.008)
22.6 ± 0.2
(0.89 ± 0.008)
80 ± 0.3 (3.15 ± 0.012)
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
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of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000