VSK.26..PbF Series Vishay High Power Products Thyristor/Diode and Thyristor/Thyristor (ADD-A-PAKTM Generation 5 Power Modules), 27 A FEATURES • High voltage • Industrial standard package RoHS • Thick copper baseplate COMPLIANT • UL E78996 approved • 3500 VRMS isolating voltage • Totally lead (Pb)-free • Designed and qualified for industrial level ADD-A-PAKTM BENEFITS PRODUCT SUMMARY IT(AV) or IF(AV) 27 A • Up to 1600 V • Fully compatible TO-240AA MECHANICAL DESCRIPTION ADD-A-PAKTM The Generation 5 of modules combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid copper baseplate at the bottom side of the device. The Cu baseplate allows an easier mounting on the majority of heatsink with increased tolerance of surface roughness and improved thermal spread. The Generation 5 of AAP modules is manufactured without hard mold, eliminating in this way any possible direct stress on the leads. The electrical terminals are secured against axial pull-out: they are fixed to the module housing via a click-stop feature already tested and proved as reliable on other Vishay HPP modules. • High surge capability • Easy mounting on heatsink • Al203 DBC insulator • Heatsink grounded ELECTRICAL DESCRIPTION These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery chargers. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES IT(AV) or IF(AV) 85 °C 27 IO(RMS) As AC switch 60 ITSM, IFSM 50 Hz 400 I2 t 60 Hz 420 50 Hz 800 60 Hz 730 I2√t VRRM TStg Range UNITS A A2s 8000 A2√s 400 to 1600 V - 40 to 125 °C TJ Document Number: 94418 Revision: 22-Apr-08 For technical questions, contact: [email protected] www.vishay.com 1 VSK.26..PbF Series Vishay High Power Products Thyristor/Diode and Thyristor/Thyristor (ADD-A-PAKTM Generation 5 Power Modules), 27 A ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V VDRM, MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE, GATE OPEN CIRCUIT V 04 400 500 400 06 600 700 600 08 800 900 800 10 1000 1100 1000 12 1200 1300 1200 14 1400 1500 1400 16 1600 1700 1600 VSK.26 IRRM, IDRM AT 125 °C mA 15 ON-STATE CONDUCTION PARAMETER SYMBOL Maximum average on-state current (thyristors) IT(AV) Maximum average forward current (diodes) IF(AV) Maximum continuous RMS on-state current as AC switch TEST CONDITIONS VALUES 180° conduction, half sine wave, TC = 85 °C IO(RMS) I(RMS) or UNITS 27 I(RMS) 60 A t = 10 ms No voltage reapplied t = 8.3 ms Maximum peak, one-cycle non-repetitive on-state or forward current ITSM or IFSM t = 10 ms 100 % VRRM reapplied t = 8.3 ms t = 10 ms t = 10 ms No voltage reapplied t = 8.3 ms I2t t = 10 ms 100 % VRRM reapplied t = 8.3 ms t = 10 ms I2√t (1) VT(TO) (2) Maximum value or threshold voltage Maximum value of on-state slope resistance rt (2) Maximum peak on-state or forward voltage Maximum non-repetitive rate of rise of turned on current Initial TJ = TJ maximum t = 0.1 to 10 ms, no voltage reapplied Low level (3) High level (4) Low level (3) High level (4) VTM ITM = π x IT(AV) VFM IFM = π x IF(AV) dI/dt 420 335 350 470 490 800 TJ = 25 °C, no voltage reapplied t = 8.3 ms Maximum I2√t for fusing Sinusoidal half wave, initial TJ = TJ maximum TJ = 25 °C, no voltage reapplied t = 8.3 ms Maximum I2t for fusing 400 TJ = TJ maximum TJ = TJ maximum TJ = 25 °C 730 560 510 1100 1000 8000 0.92 0.95 12.11 11.82 V mΩ V TJ = 25 °C, from 0.67 VDRM, ITM = π x IT(AV), Ig = 500 mA, tr < 0.5 µs, tp > 6 µs 150 A/µs IH TJ = 25 °C, anode supply = 6 V, resistive load, gate open circuit 200 Maximum latching current IL TJ = 25 °C, anode supply = 6 V, resistive load 400 www.vishay.com 2 A2√s 1.95 Maximum holding current Notes (1) I2t for time t = I2√t x √t x x (2) Average power = V 2 T(TO) x IT(AV) + rt x (IT(RMS)) A2s (3) (4) mA 16.7 % x π x IAV < I < π x IAV I > π x IAV For technical questions, contact: [email protected] Document Number: 94418 Revision: 22-Apr-08 VSK.26..PbF Series Thyristor/Diode and Thyristor/Thyristor Vishay High Power Products TM (ADD-A-PAK Generation 5 Power Modules), 27 A TRIGGERING PARAMETER SYMBOL Maximum average gate power VALUES 10 PG(AV) 2.5 IGM 2.5 - VGM 10 Maximum peak gate current Maximum peak negative gate voltage TEST CONDITIONS PGM Maximum peak gate power TJ = - 40 °C Maximum gate voltage required to trigger Anode supply = 6 V resistive load TJ = 25 °C VGT TJ = 125 °C TJ = - 40 °C Maximum gate current required to trigger Anode supply = 6 V resistive load TJ = 25 °C IGT TJ = 125 °C UNITS W A 4.0 V 2.5 1.7 270 150 mA 80 Maximum gate voltage that will not trigger VGD TJ = 125 °C, rated VDRM applied 0.25 V Maximum gate current that will not trigger IGD TJ = 125 °C, rated VDRM applied 6 mA VALUES UNITS 15 mA 2500 (1 min) 3500 (1 s) V 500 V/µs VALUES UNITS - 40 to 125 °C BLOCKING PARAMETER SYMBOL TEST CONDITIONS Maximum peak reverse and off-state leakage current at VRRM, VDRM IRRM, IDRM TJ = 125 °C, gate open circuit RMS insulation voltage VINS 50 Hz, circuit to base, all terminals shorted dV/dt (1) Maximum critical rate of rise of off-state voltage TJ = 125 °C, linear to 0.67 VDRM Note (1) Available with dV/dt = 1000 V/ms, to complete code add S90 i.e. VSKT26/16AS90 THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Junction operating and storage temperature range TEST CONDITIONS TJ, TStg Maximum internal thermal resistance, junction to case per module RthJC DC operation 0.31 Typical thermal resistance, case to heatsink RthCS Mounting surface flat, smooth and greased 0.1 K/W A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. to heatsink Mounting torque ± 10 % busbar Approximate weight Case style 5 Nm 3 110 g 4 oz. JEDEC TO-240AA ΔR CONDUCTION PER JUNCTION DEVICES VSK.26 SINE HALF WAVE CONDUCTION RECTANGULAR WAVE CONDUCTION 180° 120° 90° 60° 30° 180° 120° 90° 60° 30° 0.23 0.27 0.34 0.48 0.73 0.17 0.28 0.36 0.49 0.73 UNITS °C/W Note • Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Document Number: 94418 Revision: 22-Apr-08 For technical questions, contact: [email protected] www.vishay.com 3 VSK.26..PbF Series Maximum Allowable Case Tempera ture (°C) 130 VSK.26.. Series RthJC (DC) = 0.62 K/ W 120 110 Conduction Angle 100 30° 60° 90° 120° 90 180° 80 0 5 10 15 20 25 30 Maximum Average On-state Power Loss (W) Thyristor/Diode and Thyristor/Thyristor (ADD-A-PAKTM Generation 5 Power Modules), 27 A Vishay High Power Products 70 DC 180° 120° 90° 60° 30° 60 50 30 Conduction Period 20 VSK.26.. Series Per Junction TJ = 125°C 10 0 0 10 Average On-state Current (A) Peak Half Sine Wave On-state Current (A) 120 Conduction Period 100 30° 60° 90° 90 120° 180° DC 80 0 10 20 30 30 40 50 40 Fig. 4 - On-State Power Loss Characteristics 50 400 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @60 Hz 0.0083 s @50 Hz 0.0100 s 350 300 250 200 VSK.26.. Series Per Junc tion 150 1 10 100 Average On-state Current (A) Numb er Of Eq ual Amplitud e Half Cycle Current Pulses (N) Fig. 2 - Current Ratings Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current 50 Peak Half Sine Wave On-state Current (A) Maximum Allowable Case Tempera ture (°C) Ma ximum Average On-sta te Power Loss (W) VSK.26.. Series R thJC (DC) = 0.62 K/ W 110 20 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics 130 RMS Limit 40 180° 120° 90° 60° 30° 40 RMS Limit 30 20 Cond uction Angle 10 VSK.26.. Series Per Junction TJ = 125°C 0 0 5 10 15 20 25 30 400 350 300 Ma ximum Non Repetitive Surge Current Versus Pulse Tra in Duration. Control Of Conduc tion May Not Be Maintained. Initial TJ = 125°C No Voltage Reap plied Rated VRRM Reapplied 250 200 VSK.26.. Series Per Junction 150 0.01 0.1 1 Average On-state Current (A) Pulse Train Duration (s) Fig. 3 - On-State Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 94418 Revision: 22-Apr-08 VSK.26..PbF Series Thyristor/Diode and Thyristor/Thyristor Vishay High Power Products TM (ADD-A-PAK Generation 5 Power Modules), 27 A R thSA 0.3 = 0.1 W K/ K/ W 0.5 W K/ K/ W 70 W K/ 80 7 0. 180° 120° 90° 60° 30° 90 1 1. 5 K/ W 60 lt a - De 2K /W 50 40 R Maximum Total On-sta te Power Loss (W) 100 3K /W Conduction Angle 4 K/ 30 VSK.26.. Series Per Module TJ = 125°C 20 10 W 8 K/ W 0 0 10 20 30 40 50 60 0 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (°C) Total RMSOutput Current (A) Fig. 7 - On-State Power Loss Characteristics K/ W 1K /W 2 x VSK.26.. Series Single Phase Bridge Connec ted TJ = 125°C 50 K/ W aR 100 0.7 elt -D 150 K/ W .1 =0 0. 5 180° (Sine) 180° (Rec t) A W K/ W K/ 200 S R th 0. 2 3 0. Maximum Total Power Loss (W) 250 1.5 K/ W 3 K/ W 8 K/ W 0 0 10 20 30 40 50 0 60 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (°C) Total Output Current (A) Fig. 8 - On-State Power Loss Characteristics R t hS 150 K/ W K/ W 1 K/ 100 3 x VSK.26.. Series Three Phase Bridge Connected TJ = 125°C 50 R 0.7 K/ W a 0.5 K/ W elt -D 120° (Rec t) 200 W K/ 0.1 0. 4 = 0. 3 250 W K/ 300 A 2 0. Maximum Total Power Loss (W) 350 W 1.5 K / W 3 K/ W 0 0 10 20 30 40 50 60 Total Output Current (A) 70 80 0 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (°C) Fig. 9 - On-State Power Loss Characteristics Document Number: 94418 Revision: 22-Apr-08 For technical questions, contact: [email protected] www.vishay.com 5 VSK.26..PbF Series Vishay High Power Products Thyristor/Diode and Thyristor/Thyristor (ADD-A-PAKTM Generation 5 Power Modules), 27 A Instanta neous On-sta te Current (A) 1000 100 TJ= 25°C 10 TJ= 125°C VSK.26.. Series Per Junction 1 0 1 2 3 4 5 6 7 Instantaneous On-state Voltage (V) Transient Thermal Impedance Z thJC (K/W) Fig. 10 - On-State Voltage Drop Characteristics 1 Steady State Value: R thJC = 0.62 K/ W (DC Operation) 0.1 VSK.26.. Series 0.01 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 11 - Thermal Impedance ZthJC Characteristics Rectangular gate pulse a)Rec ommended load line for rated di/ dt: 20 V, 30 ohms tr = 0.5 µs, tp >= 6 µs b)Rec ommended load line for <= 30% rated d i/ dt: 20 V, 65 ohms 10 tr = 1 µs, tp >= 6 µs (1) PGM = 100 W, tp = 500 µs (2) PGM = 50 W, tp = 1 ms (3) PGM = 20 W, tp = 25 ms (4) PGM = 10 W, tp = 5 ms (a) TJ = 125 °C 1 TJ = -40 °C (b ) TJ = 25 °C Instantaneous Gate Voltage (V) 100 (4) (3) (2) (1) VGD IGD 0.1 0.001 0.01 VSK.26.. Series 0.1 1 Frequenc y Limited by PG(AV) 10 100 1000 Instantaneous Gate Current (A) Fig. 12 - Gate Characteristics www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 94418 Revision: 22-Apr-08 VSK.26..PbF Series Thyristor/Diode and Thyristor/Thyristor Vishay High Power Products TM (ADD-A-PAK Generation 5 Power Modules), 27 A ORDERING INFORMATION TABLE Device code VSK T 26 1 2 3 / 16 S90 P 4 5 6 1 - Module type 2 - Circuit configuration (see end of datasheet) 3 - Current code (1) 4 - Voltage code (see Voltage Ratings table) 5 - dV/dt code: S90 = dV/dt 1000 V/µs No letter = dV/dt 500 V/µs 6 - P = Lead (Pb)-free (1) Available with no auxiliary cathode (for details see dimensions - link at the end of datasheet) To specify change: 26 to 27 e.g.: VSKT27/16P etc. Note • To order the optional hardware go to www.vishay.com/doc?95172 CIRCUIT CONFIGURATION VSKH VSKT (1) ~ 2 + (2) + (2) 3 3 - 1 2 + (2) 2 4 5 76 (3) G1 K1 (4) (5) + (2) 3 3 4 5 (3) G1 K1 K2 G2 (4) (5) (7) (6) (1) ~ 1 2 4 5 76 (1) ~ 1 1 VSKN VSKL (1) (3) K2 G2 (7) (6) + (3) G1 K1 (4) (5) LINKS TO RELATED DOCUMENTS Dimensions Document Number: 94418 Revision: 22-Apr-08 http://www.vishay.com/doc?95085 For technical questions, contact: [email protected] www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1