VISHAY VSKT56-12

VSK.41.., VSK.56.. Series
Vishay Semiconductors
ADD-A-PAK Generation VII Power Modules
Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A
FEATURES
• High voltage
• Industrial standard package
• Low thermal resistance
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
ADD-A-PAK
• Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate
PRODUCT SUMMARY
IT(AV) or IF(AV)
• Up to 1600 V
45 A/60 A
• High surge capability
MECHANICAL DESCRIPTION
• Easy mounting on heatsink
The ADD-A-PAK generation VII, new generation of
ADD-A-PAK module, combines the excellent thermal
performances obtained by the usage of exposed direct
bonded copper substrate, with advanced compact simple
package solution and simplified internal structure with
minimized number of interfaces.
ELECTRICAL DESCRIPTION
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VSK.41
VSK.56
IT(AV) or IF(AV)
85 °C
45
60
IO(RMS)
As AC switch
100
135
ITSM,
IFSM
50 Hz
850
1200
60 Hz
890
1256
50 Hz
3.61
7.20
60 Hz
3.30
6.57
36.1
72
I2t
I2√t
VRRM
TStg
TJ
Document Number: 94630
Revision: 17-May-10
Range
UNITS
A
kA2s
kA2√s
400 to 1600
V
- 40 to 125
°C
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
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1
VSK.41.., VSK.56.. Series
Vishay Semiconductors
ADD-A-PAK Generation VII Power Modules
Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
VDRM, MAXIMUM REPETITIVE
PEAK OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
04
400
500
400
06
600
700
600
08
800
900
800
10
1000
1100
1000
12
1200
1300
1200
14
1400
1500
1400
16
1600
1700
1600
VSK.41
VSK.56
IRRM, IDRM
AT 125 °C
mA
15
ON-STATE CONDUCTION
PARAMETER
SYMBOL
Maximum average on-state current (thyristors)
IT(AV)
Maximum average forward current (diodes)
IF(AV)
Maximum continuous RMS on-state current,
as AC switch
TEST CONDITIONS
VSK.41 VSK.56
180° conduction, half sine wave,
TC = 85 °C
IO(RMS)
I(RMS)
or
I(RMS)
45
60
100
135
850
1200
890
1256
UNITS
A
t = 10 ms
Maximum peak, one-cycle non-repetitive
on-state or forward current
ITSM
or
IFSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
I2t
I2√t (1)
Maximum value or threshold voltage
Maximum value of on-state
slope resistance
Maximum peak on-state or forward voltage
Maximum non-repetitive rate of rise of
turned on current
VT(TO) (2)
rt (2)
100 % VRRM
reapplied
Sinusoidal
half wave,
initial TJ =
TJ maximum
715
1000
750
1056
3.61
7.20
3.30
6.57
2.56
5.10
2.33
4.56
t = 0.1 ms to 10 ms, no voltage reapplied
TJ = TJ maximum
36.1
72
Low level (3)
1.08
0.91
1.12
1.02
4.7
4.27
4.5
3.77
1.81
1.7
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I2√t for fusing
No voltage
reapplied
High level (4)
Low level (3)
High level (4)
No voltage
reapplied
100 % VRRM
reapplied
Initial TJ =
TJ maximum
TJ = TJ maximum
TJ = TJ maximum
VTM
ITM = π x IT(AV)
VFM
IFM = π x IF(AV)
dI/dt
TJ = 25 °C, from 0.67 VDRM,
ITM = π x IT(AV), Ig = 500 mA, tr < 0.5 μs, tp > 6 μs
150
200
TJ = 25 °C
Maximum holding current
IH
TJ = 25 °C, anode supply = 6 V,
resistive load, gate open circuit
Maximum latching current
IL
TJ = 25 °C, anode supply = 6 V, resistive load
400
kA2s
kA2√s
V
mΩ
V
A/μs
mA
400
Notes
(1) I2t for time t = I2√t x √t
x
x
(2) Average power = V
2
T(TO) x IT(AV) + rt x (IT(RMS))
(3) 16.7 % x π x I
AV < I < π x IAV
(4) I > π x I
AV
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 94630
Revision: 17-May-10
VSK.41.., VSK.56.. Series
ADD-A-PAK Generation VII Power Modules
Vishay Semiconductors
Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A
TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
TEST CONDITIONS
VSK.41
PGM
10
PG(AV)
2.5
IGM
2.5
- VGM
10
TJ = - 40 °C
Maximum gate voltage required to trigger
VSK.56
VGT
W
A
4.0
Anode supply = 6 V
resistive load
TJ = 25 °C
V
2.5
TJ = 125 °C
1.7
TJ = - 40 °C
270
Anode supply = 6 V
resistive load
UNITS
Maximum gate current required to trigger
IGT
TJ = 25 °C
mA
Maximum gate voltage that will not trigger
VGD
TJ = 125 °C, rated VDRM applied
0.25
V
Maximum gate current that will not trigger
IGD
TJ = 125 °C, rated VDRM applied
6
mA
150
TJ = 125 °C
80
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum peak reverse and off-state
leakage current at VRRM, VDRM
IRRM,
IDRM
TJ = 125 °C, gate open circuit
Maximum RMS insulation voltage
VINS
50 Hz
Maximum critical rate of rise of off-state voltage
dV/dt
TJ = 125 °C, linear to 0.67 VDRM
VSK.41
VSK.56
UNITS
15
mA
3000 (1 min)
3600 (1 s)
V
1000
V/μs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Junction operating and storage
temperature range
TEST CONDITIONS
VSK.41
TJ, TStg
VSK.56
- 40 to 125
Maximum internal thermal resistance,
junction to case per leg
RthJC
DC operation
Typical thermal resistance,
case to heatsink per module
RthCS
Mounting surface flat, smooth and greased
0.44
UNITS
°C
0.35
°C/W
0.1
A mounting compound is recommended and the
torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
to heatsink
Mounting torque ± 10 %
busbar
4
Nm
3
Approximate weight
Case style
JEDEC
75
g
2.7
oz.
TO-240AA compatible
ΔR CONDUCTION PER JUNCTION
DEVICES
SINE HALF WAVE CONDUCTION
180°
120°
90°
60°
RECTANGULAR WAVE CONDUCTION
30°
180°
120°
90°
60°
30°
VSK.41..
0.110
0.131
0.17
0.23
0.342
0.085
0.138
0.177
0.235
0.345
VSK.56..
0.088
0.104
0.134
0.184
0.273
0.07
0.111
0.143
0.189
0.275
UNITS
°C/W
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Document Number: 94630
Revision: 17-May-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
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3
VSK.41.., VSK.56.. Series
Maximum average on-state power loss (W)
130
VSK.41 Series
RthJC (DC) = 0.44°C/W
120
110
100
180°
120°
90°
60°
30°
90
80
0
Maximum allowable case temperature (°C)
ADD-A-PAK Generation VII Power Modules
Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A
10
20
30
40
80
180°
120°
90°
60°
30°
60
RMS limit
100
DC
40
20
VSK.41 Series
Per leg, Tj = 125°C
0
0
10
20
30
40
50
60
70
80
Average on-state current (A)
Average on-state current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - On-State Power Loss Characteristics
800
130
VSK.41 Series
RthJC (DC) = 0.44 °C/W
120
110
100
DC
180°
120°
90°
60°
30°
90
80
70
0
10
20
30
40
50
60
70
At any rated load condition and with
rated Vrrm applied following surge
Initial Tj = Tj max
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100s
700
600
500
400
Per leg
300
1
80
10
100
Number of equal amplitude half cycle current pulses (N)
Average on-state current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
900
80
180°
120°
90°
60°
30°
70
60
50
RMS limit
40
30
20
VSK.41 Series
Per leg, Tj = 125°C
10
0
0
5 10 15 20 25 30 35 40 45 50
Average on-state current (A)
Fig. 3 - On-State Power Loss Characteristics
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Peak half sine wave on-state current (A)
Maximum average on-state power loss (W)
120
50
Peak half sine wave on-state current (A)
Maximum allowable case temperature (°C)
Vishay Semiconductors
800
700
Maximum Non-repetitive Surge Current
Versus Pulse Train Duration. Control
of conduction may not be maintaned.
Initial Tj = 125°C
No Voltage Reapplied
Rated Vrrm reapplied
600
500
400
Per leg
300
0.01
0.1
1
Pulse train duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 94630
Revision: 17-May-10
VSK.41.., VSK.56.. Series
ADD-A-PAK Generation VII Power Modules
Vishay Semiconductors
Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A
Maximum total on-state power loss (W)
160
140
RthSA = 0.1 °C/W
0.3 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
1.5 °C/W
2 °C/W
3 °C/W
5 °C/W
180°
120°
90°
60°
30°
120
100
80
60
40
VSK.41 Series
Per module
Tj = 125°C
20
0
0
20
40
60
100
0
80
Total RMS output current (A)
20
40
60
80
100 120 140
Maximum allowable ambient temperature (°C)
Fig. 7 - On-State Power Loss Characteristics
Maximum total power loss (W)
350
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
1.5 °C/W
180°
(sine)
180°
(rect)
300
250
200
∼
150
100
2 x VSK.41 Series
single phase bridge connected
Tj = 125°C
50
0
0
20
40
60
80
Total output current (A)
0
100
20
40
60
80
100 120 140
Maximum allowable ambient temperature (°C)
Fig. 8 - On-State Power Loss Characteristics
Maximum total power loss (W)
500
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
400
120°
(rect)
300
200
100
3 x VSK.41 Series
three phase bridge connected
Tj = 125°C
0
0
20
40
60
80
100 120 140
0
Total output current (A)
20
40
60
80
100 120 140
Maximum allowable ambient temperature (°C)
Fig. 9 - On-State Power Loss Characteristics
Document Number: 94630
Revision: 17-May-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
5
VSK.41.., VSK.56.. Series
Maximum average on-state power loss (W)
130
VSK.56 Series
RthJC (DC) = 0.35°C/W
120
110
100
180°
120°
90°
60°
30°
90
80
0
Maximum allowable case temperature (°C)
ADD-A-PAK Generation VII Power Modules
Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A
10
20
30
40
50
60
180°
120°
90°
60°
30°
120
100
DC
80
RMS limit
60
40
20
VSK.56 Series
Per leg, Tj = 125°C
0
0
20
40
60
80
100
Average on-state current (A)
Average on-state current (A)
Fig. 10 - Current Ratings Characteristics
Fig. 13 - On-State Power Loss Characteristics
1100
130
VSK.56 Series
RthJC (DC) = 0.35 °C/W
120
110
100
DC
180°
120°
90°
60°
30°
90
80
70
0
20
40
60
80
At any rated load condition and with
rated Vrrm applied following surge
Initial Tj = Tj max
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100s
1000
900
800
700
600
500
Per leg
400
1
100
10
100
Number of equal amplitude half cycle current pulses (N)
Average on-state current (A)
Fig. 11 - Current Ratings Characteristics
Fig. 14 - Maximum Non-Repetitive Surge Current
1300
100
180°
120°
90°
60°
30°
80
Peak half sine wave on-state current (A)
Maximum average on-state power loss (W)
140
70
Peak half sine wave on-state current (A)
Maximum allowable case temperature (°C)
Vishay Semiconductors
60
RMS limit
40
20
VSK.56 Series
Per leg, Tj = 125°C
0
0
10
20
30
40
50
60
70
Average on-state current (A)
Fig. 12 - On-State Power Loss Characteristics
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1200
1100
1000
900
Maximum Non-repetitive Surge Current
Versus Pulse Train Duration. Control
of conduction may not be maintained.
Initial Tj = 125°C
No Voltage Reapplied
Rated Vrrm reapplied
800
700
600
500
400
0.01
Per leg
0.1
1
Pulse train duration (s)
Fig. 15 - Maximum Non-Repetitive Surge Current
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 94630
Revision: 17-May-10
VSK.41.., VSK.56.. Series
ADD-A-PAK Generation VII Power Modules
Vishay Semiconductors
Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A
Maximum total on-state power loss (W)
250
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.4 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
1.5 °C/W
2 °C/W
4 °C/W
180°
120°
90°
60°
30°
200
150
100
50
VSK.56 Series
Per module
Tj = 125°C
0
0
20
40
60
80
100 120 140
0
Total RMS output current (A)
20
40
60
80
100 120 140
Maximum allowable ambient temperature (°C)
Fig. 16 - On-State Power Loss Characteristics
Maximum total power loss (W)
600
500
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
2 °C/W
180°
(sine)
180°
(rect)
400
∼
300
200
2 x VSK.56 Series
single phase bridge connected
Tj = 125°C
100
0
0
20
40
60
80
100 120 140
0
Total output current (A)
20
40
60
80
100 120 140
Maximum allowable ambient temperature (°C)
Fig. 17 - On-State Power Loss Characteristics
Maximum total power loss (W)
700
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
600
500
120°
(rect)
400
300
200
3 x VSK.56 Series
three phase bridge connected
Tj = 125°C
100
0
0
20 40 60 80 100 120 140 160 180
0
Total output current (A)
20
40
60
80
100 120 140
Maximum allowable ambient temperature (°C)
Fig. 18 - On-State Power Loss Characteristics
Document Number: 94630
Revision: 17-May-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
7
VSK.41.., VSK.56.. Series
Vishay Semiconductors
ADD-A-PAK Generation VII Power Modules
Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A
1000
VSK. 41 Series
Per leg
Instantaneous on-state current (A)
Instantaneous on-state current (A)
1000
100
10
Tj = 125°C
Tj = 25°C
VSK. 56 Series
Per leg
100
10
Tj = 125°C
Tj = 25°C
1
1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Instantaneous on-state voltage (V)
Instantaneous on-state voltage (V)
Transient thermal impedance Z thJC (°C/W)
Fig. 19 - On-State Voltage Drop Characteristics
Fig. 20 - On-State Voltage Drop Characteristics
1
Steady state value
RthJC = 0.44 °C/W
RthJC = 0.35 °C/W
(DC operation)
0.1
VSK.41 Series
VSK.56 Series
Per leg
0.01
0.001
0.01
0.1
1
10
Square wave pulse duration (s)
Fig. 21 - Thermal Impedance ZthJC Characteristics
Rectangular gate pulse
a)Recommended load line for
rated di/ dt: 20 V, 30 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
<= 30% rated di/ dt: 20 V, 65 ohms
10
tr = 1 µs, tp >= 6 µs
(1) PGM = 100 W, tp = 500 µs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
(a)
(b)
TJ = -40 °C
TJ = 125 °C
1
TJ = 25 °C
Instantaneous gate voltage (V)
100
(4) (3)
(2) (1)
VGD
IGD
0.1
0.001
0.01
VSK.
IRK.41../ .56.. Series
0.1
1
Frequency Limited by PG(AV)
10
100
1000
Instantaneous gate current (A)
Fig. 22 - Gate Characteristics
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 94630
Revision: 17-May-10
VSK.41.., VSK.56.. Series
ADD-A-PAK Generation VII Power Modules
Vishay Semiconductors
Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A
ORDERING INFORMATION TABLE
Device code
VSK
T
56
1
2
3
/
16
4
1
-
Module type
2
-
Circuit configuration (see end of datasheet)
3
-
Current code
4
-
Voltage code (see Voltage Ratings table)
41 = 45 A
56 = 60 A
Note
• To order the optional hardware go to www.vishay.com/doc?95172
CIRCUIT CONFIGURATION
VSKT
VSKH
(1)
~
1
VSKL
(1)
~
1
+
2
3
+
(2)
3
4 5 7 6
-
-
1
2
+
2
(2)
3
4 5
(3)
G1 K1 K2 G2
(4) (5) (7) (6)
(1)
~
1
2
(2)
VSKN
(1)
3
7 6
(3)
G1 K1
(4) (5)
+
(2)
4 5
(3)
K2 G2
(7) (6)
+
(3)
G1 K1
(4) (5)
LINKS TO RELATED DOCUMENTS
Dimensions
Document Number: 94630
Revision: 17-May-10
www.vishay.com/doc?95368
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[email protected], [email protected], [email protected]
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Outline Dimensions
Vishay Semiconductors
ADD-A-PAK Generation VII - Thyristor
DIMENSIONS in millimeters (inches)
29 ± 0.5
(1 ± 0.020)
30 ± 0.5
(1.18 ± 0.020)
35 REF.
18 (0.7) REF.
30 ± 1 (1.18 ± 0.039)
15.5 ± 0.5
(0.6 ± 0.020)
24 ± 0.5
(1 ± 0.020)
Viti M5 x 0.8
Screws M5 x 0.8
6.7 ± 0.3 (0.26 ± 0.012)
Fast-on tab 2.8 x 0.8 (0.110 x 0.03)
Document Number: 95368
Revision: 11-Nov-08
20 ± 0.5 (0.79 ± 0.020)
20 ± 0.5 (0.79 ± 0.020)
92 ± 0.75 (3.6 ± 0.030)
5.8 ± 0.25 (0.228 ± 0.010)
15 ± 0.5 (0.59 ± 0.020)
For technical questions, contact: [email protected]
4 ± 0.2 (0.157 ± 0.008)
7 6
4 5
3
2
1
6.3 ± 0.2 (0.248 ± 0.008)
22.6 ± 0.2
(0.89 ± 0.008)
80 ± 0.3 (3.15 ± 0.012)
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Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
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liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
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