SO T2 23 PBHV2160Z 600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor 24 June 2015 Product data sheet 1. General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV3160Z 2. Features and benefits • • • Low collector-emitter saturation voltage VCEsat High collector current capability High collector current gain hFE at high IC 3. Applications • • • • • • Electronic ballast for fluorecent lighting LED driver for LED chain module LCD backlighting HID front lighting Hook switch for wired telecom Switch Mode Power Supply (SMPS) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 600 V IC collector current - - 0.1 A Scan or click this QR code to view the latest information for this product PBHV2160Z NXP Semiconductors 600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 B base 2 C collector 3 E emitter 4 C collector Simplified outline Graphic symbol 2, 4 4 1 1 2 3 SC-73 (SOT223) 3 sym016 6. Ordering information Table 3. Ordering information Type number PBHV2160Z Package Name Description Version SC-73 plastic surface-mounted package with increased heatsink; 4 leads SOT223 7. Marking Table 4. Marking codes Type number Marking code PBHV2160Z HV216Z PBHV2160Z Product data sheet All information provided in this document is subject to legal disclaimers. 24 June 2015 © NXP Semiconductors N.V. 2015. All rights reserved 2 / 13 PBHV2160Z NXP Semiconductors 600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 600 V VCEO collector-emitter voltage open base - 600 V VCESM collector-emitter peak voltage VBE = 0 V - 600 V VEBO emitter-base voltage open collector - 6 V IC collector current - 0.1 A Ptot total power dissipation [1] - 0.65 W [2] - 1.4 W Tamb ≤ 25 °C Tj junction temperature - 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C [1] [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm . aaa-013425 1.6 Ptot (W) (1) 1.2 0.8 (2) 0.4 0 -60 20 (1) FR4 PCB, mounting pad for collector 6 cm (2) FR4 PCB, standard footprint Fig. 1. 100 Tamb (°C) 180 2 Power derating curves PBHV2160Z Product data sheet All information provided in this document is subject to legal disclaimers. 24 June 2015 © NXP Semiconductors N.V. 2015. All rights reserved 3 / 13 PBHV2160Z NXP Semiconductors 600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) Min Typ Max Unit [1] - - 190 K/W [2] - - 89 K/W - - 20 K/W thermal resistance from junction to solder point [1] [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. aaa-013426 103 Zth(j-a) (K/W) 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm . duty cycle = 1 102 0.75 0.5 0.33 10 0.2 0.1 0.05 0.02 1 0.01 0 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, single-sided copper, tin-plated and standard footprint. Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-013427 102 0.75 Zth(j-a) (K/W) duty cycle = 1 0.5 0.33 0.2 10 0.1 0.05 0.02 1 0.01 0 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 2 FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm . Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBHV2160Z Product data sheet All information provided in this document is subject to legal disclaimers. 24 June 2015 © NXP Semiconductors N.V. 2015. All rights reserved 4 / 13 PBHV2160Z NXP Semiconductors 600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = 400 V; IE = 0 A; Tamb = 25 °C - - 100 nA VCB = 400 V; IE = 0 A; Tj = 150 °C - - 10 µA ICES collector-emitter cut-off VCE = 400 V; VBE = 0 V; Tamb = 25 °C current - - 100 nA IEBO emitter-base cut-off current VEB = 4.8 V; IC = 0 A; Tamb = 25 °C - - 100 nA hFE DC current gain VCE = 10 V; IC = 10 mA; Tamb = 25 °C 70 125 - VCEsat collector-emitter saturation voltage IC = 30 mA; IB = 6 mA; Tamb = 25 °C - 65 125 mV VBEsat base-emitter saturation IC = 50 mA; IB = 5 mA; pulsed; voltage tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - - 950 mV Cc collector capacitance - 1.7 - pF - 81 - pF VCB = 20 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C Ce emitter capacitance VEB = 0.5 V; IC = 0 A; ic = 0 A; f = 1 MHz; Tamb = 25 °C aaa-013583 200 hFE aaa-014045 200 hFE 150 150 (1) (1) (2) 100 100 (2) (3) (3) 50 0 10-1 Fig. 4. 50 1 10 102 IC (mA) 0 10-1 103 1 VCE = 10 V Tamb = 25 °C (1) Tamb = 100 °C (1) VCE = 50 V (2) Tamb = 25 °C (2) VCE = 25 V (3) Tamb = −55 °C (3) VCE = 10 V DC current gain as a function of collector current; typical values PBHV2160Z Product data sheet Fig. 5. 102 IC (mA) 103 DC current gain as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 24 June 2015 10 © NXP Semiconductors N.V. 2015. All rights reserved 5 / 13 PBHV2160Z NXP Semiconductors 600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor aaa-013584 0.10 IB = 8 mA IC (A) 7.2 5.6 0.08 6.4 VBE (V) 4.8 4 0.8 3.2 0.06 aaa-013585 1.2 (1) 2.4 (2) 1.6 0.04 (3) 0.4 0.8 0.02 0 Fig. 6. 0 1 2 3 4 VCE (V) 0 10-1 5 1 10 Tamb = 25 °C VCE = 10 V Collector current as a function of collectoremitter voltage; typical values (1) Tamb = −55 °C IC (mA) 103 (2) Tamb = 25 °C (3) Tamb = 100 °C Fig. 7. aaa-013586 1.2 102 Base-emitter voltage as a function of collector current; typical values aaa-013587 1 VBEsat (V) 1.0 VCEsat (V) (1) 0.8 (1) (2) (2) 10-1 (3) (3) 0.6 0.4 0.2 10-1 Fig. 8. 1 10 102 IC (mA) 10-2 10-1 103 1 10 102 IC (mA) 103 IC/IB = 5 IC/IB = 5 (1) Tamb = −55 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb= 100 °C (3) Tamb = −55 °C Base-emitter saturation voltage as a function of Fig. 9. collector current; typical values Collector-emitter saturation voltage as a function of collector current; typical values PBHV2160Z Product data sheet All information provided in this document is subject to legal disclaimers. 24 June 2015 © NXP Semiconductors N.V. 2015. All rights reserved 6 / 13 PBHV2160Z NXP Semiconductors 600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor aaa-013588 1 (1) VCEsat (V) aaa-013589 103 (2) RCEsat (Ω) 102 (3) 10-1 10 (1) (2) (3) 1 10-2 10-1 1 10 102 IC (mA) 10-1 10-1 103 1 Tamb = 25 °C IC/IB = 5 (1) IC/IB = 10 (1) Tamb = 100 °C (2) IC/IB = 5 (2) Tamb = 25 °C (3) IC/IB = 2.5 (3) Tamb = −55 °C Fig. 10. Collector-emitter saturation voltage as a function of collector current; typical values 10 102 IC (mA) 103 Fig. 11. Collector-emitter saturation resistance as a function of collector current; typical values aaa-013590 103 RCEsat (Ω) (1) 102 10 (2) (3) 1 10-1 10-1 1 10 102 IC (mA) 103 Tamb = 25 °C (1) IC/IB = 10 (2) IC/IB = 5 (3) IC/IB = 2.5 Fig. 12. Collector-emitter saturation resistance as a function of collector current; typical values PBHV2160Z Product data sheet All information provided in this document is subject to legal disclaimers. 24 June 2015 © NXP Semiconductors N.V. 2015. All rights reserved 7 / 13 PBHV2160Z NXP Semiconductors 600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor 11. Package outline Plastic surface-mounted package with increased heatsink; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 e1 3 Lp bp w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.7 1.1 0.7 0.95 0.85 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC SOT223 JEITA SC-73 EUROPEAN PROJECTION ISSUE DATE 04-11-10 06-03-16 Fig. 13. Package outline SC-73 (SOT223) PBHV2160Z Product data sheet All information provided in this document is subject to legal disclaimers. 24 June 2015 © NXP Semiconductors N.V. 2015. All rights reserved 8 / 13 PBHV2160Z NXP Semiconductors 600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor 12. Soldering 7 3.85 3.6 3.5 0.3 1.3 1.2 (4×) (4×) solder lands 4 solder resist 3.9 6.1 7.65 solder paste occupied area 1 2 3 Dimensions in mm 2.3 2.3 1.2 (3×) 1.3 (3×) 6.15 sot223_fr Fig. 14. Reflow soldering footprint for SC-73 (SOT223) 8.9 6.7 1.9 solder lands 4 solder resist 6.2 1 2 8.7 Dimensions in mm 3 1.9 (3×) 2.7 occupied area preferred transport direction during soldering 2.7 1.1 1.9 (2×) sot223_fw Fig. 15. Wave soldering footprint for SC-73 (SOT223) PBHV2160Z Product data sheet All information provided in this document is subject to legal disclaimers. 24 June 2015 © NXP Semiconductors N.V. 2015. All rights reserved 9 / 13 PBHV2160Z NXP Semiconductors 600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor 13. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PBHV2160Z v.1 20150624 Product data sheet - - PBHV2160Z Product data sheet All information provided in this document is subject to legal disclaimers. 24 June 2015 © NXP Semiconductors N.V. 2015. All rights reserved 10 / 13 PBHV2160Z NXP Semiconductors 600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 14. Legal information 14.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 14.2 Definitions Preview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 14.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. PBHV2160Z Product data sheet Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 24 June 2015 © NXP Semiconductors N.V. 2015. All rights reserved 11 / 13 PBHV2160Z NXP Semiconductors 600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 14.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE, MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP Semiconductors N.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. PBHV2160Z Product data sheet All information provided in this document is subject to legal disclaimers. 24 June 2015 © NXP Semiconductors N.V. 2015. All rights reserved 12 / 13 PBHV2160Z NXP Semiconductors 600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor 15. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 5 11 Package outline ..................................................... 8 12 Soldering ................................................................ 9 13 Revision history ................................................... 10 14 14.1 14.2 14.3 14.4 Legal information .................................................11 Data sheet status ............................................... 11 Definitions ...........................................................11 Disclaimers .........................................................11 Trademarks ........................................................ 12 © NXP Semiconductors N.V. 2015. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 24 June 2015 PBHV2160Z Product data sheet All information provided in this document is subject to legal disclaimers. 24 June 2015 © NXP Semiconductors N.V. 2015. All rights reserved 13 / 13