Si PIN photodiodes S2506 series S6775 series S6967 Plastic SIP (single in-line package) S2506/S6775 series and S6967 are Si PIN photodiodes with large active areas, molded into a clear or visible-cut plastic SIP for detecting visible to near infrared range or near infrared range only. These Si PIN photodiodes feature a high sensitivity, a highspeed response and large active areas. Features Applications S2506-02: Visible to near infrared range S2506-04: Visible-cut S6775, S6967: Visible to near infrared range, high sensitivity, high-speed response, large active area S6775-01: Visible-cut, high sensitivity, high-speed response, large active area FSO (free space optics) Optical switches Laser radar, etc. Plastic package: 7 × 7.8 mm Photosensitive area size S2506 series: 2.77 × 2.77 mm S6775 series, S6967: 5.5 × 4.8 mm General ratings / Absolute maximum ratings Type no. S2506-02 S2506-04 S6775 S6775-01 S6967 Package Photosensitive area size Effective photosensitive area (mm) (mm2) 2.77 × 2.77 7.7 5.5 × 4.8 26.4 Absolute maximum ratings Power Operating dissipation temperature P Topr (mW) (°C) Reverse voltage VR max. (V) Storage temperature Tstg (°C) 150 Plastic 35 -25 to +85 -40 to +100 50 Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Type no. S2506-02 S2506-04 S6775 S6775-01 S6967 Spectral response range λ Peak sensitivity wavelength λp (nm) 320 to 1100 760 to 1100 320 to 1100 700 to 1100 320 to 1060 (nm) 960 960 900 Photosensitivity S (A/W) λp 660 nm 780 nm 830 nm 0.4 0.7 0.45 0.68 0.65 0.45 0.56 0.48 0.5 0.25 0.55 0.6 0.48 0.54 0.55 0.6 Short circuit current Isc 100 lx (μA) 7.3 4.1 30 21 26 Temp. Cut-off Terminal Dark current coefficient frequency capacitance of fc ID Ct ID RL=50 Ω f=1 MHz TCID -3 dB Typ. Max. (pF) (nA) (nA) (times/°C) (MHz) 0.1*1 0.5*2 10*1 10*2 5*2 1.15 25*1 15*1 15*2 40*2 50*2 50*2 NEP (W/Hz1/2) 1.0 × 10-14*1 1.8 × 10-14*2 1.9 × 10-14*2 2.0 × 10-14*2 *1: VR=12 V *2: VR=10 V www.hamamatsu.com 1 Si PIN photodiodes S2506/S6775 series, S6967 Spectral response S2506 series S6775 series, S6967 (Typ. Ta=25 °C) 0.8 (Typ. Ta=25 °C) 0.8 S6775 0.7 QE=100 % S2506-02 Photosensitivity (A/W) Photosensitivity (A/W) QE=100 % 0.6 0.5 0.4 0.3 0.2 0.1 0 200 S6775-01 0.7 600 800 0.5 0.4 S6967 0.3 0.2 0.1 S2506-04 400 0.6 0 200 1000 400 Wavelength (nm) 600 800 1000 Wavelength (nm) KPINB0348EB KPINB0349EB Photo sensitivity temperature characteristic (S2506-02) (Typ.) +1.5 1 nA +1.0 +0.5 S6775/-01 S2506-02/-04 100 pA S6967 10 pA 0 -0.5 200 (Typ. Ta=25 °C) 10 nA Dark current Temperature coefficient (%/°C) Dark current vs. reverse voltage 400 600 800 1000 1 pA 0.01 0.1 1 10 100 Reverse voltage (V) Wavelength (nm) KPINB0063EC KPINB0168ED 2 Si PIN photodiodes S2506/S6775 series, S6967 Dark current vs. ambient temperature Terminal capacitance vs. reverse voltage (Typ.) 10 μA S6775/-01, S6967 (VR=10 V) 1 μA Terminal capacitance 100 nA S2506-02/-04 (VR=12 V) Dark current (Typ. Ta=25 °C, f=1 MHz) 1 nF 10 nA 1 nA 100 pA 100 pF S6967 S6775/-01 10 pF S2506-02/-04 10 pA 1 pA -20 0 20 40 60 1 pF 0.1 80 1 Ambient temperature (°C) 10 100 Reverse voltage (V) KPINB0169EC KPINB0170EC Directivity S2506-02 30° 20° 10° 0° S6775/-01, S6967 10° (Typ. Ta=25 °C) 20° 30° 30° 10° 0° 100% 100% 80% 80% 40° 40° 40% 60° (Typ. Ta=25 °C) 20° 30° 40° 60% 50° 50° 10° 40° 60% 70° 20° 60° 70° 20% 50° 50° 40% 60° 70° 60° 70° 20% 80° 80° 80° 80° 90° 90° 90° 90° Relative sensitivity Relative sensitivity KPINB0065EB KPINB0401EA 3 Si PIN photodiodes S2506/S6775 series, S6967 Dimensional outline (unit: mm, tolerance unless otherwise noted: ±0.1) Center of Photosensitive area A Photosensitive area B 1.0 0.5 2.7 ± 0.2 0.2 max. Incident light 1.1 1.4 2.3 ± 0.3 14.3 ± 1 7.8 ± 0.2 3.5 ± 0.2 ϕ5.0 7.0 ± 0.2 5.08 0.5 Type no. (0.3) (0.5) (0.5) (0.3) (0.4) 1.0 (0.6) 1.0 (0.6) (0.4) Details of lead root A B S2506 series 2.8 ± 0.2 2.77 × 2.77 S6775/series S6967 3.65 ± 0.2 5.5 × 4.8 Lead surface finish: Silver plating Packing: Polyethylene pack [anti-static type] (200 pcs/pack) KPINA0084ED 4 Si PIN photodiodes S2506/S6775 series, S6967 Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Notice ∙ Metal, ceramic, plastic package products Technical information ∙ Si photodiode/Application circuit examples Information described in this material is current as of November, 2014. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KPIN1048E06 Nov. 2014 DN 5