s2506-02 etc kpin1048e

Si PIN photodiodes
S2506 series
S6775 series
S6967
Plastic SIP (single in-line package)
S2506/S6775 series and S6967 are Si PIN photodiodes with large active areas, molded into a clear or visible-cut plastic SIP for
detecting visible to near infrared range or near infrared range only. These Si PIN photodiodes feature a high sensitivity, a highspeed response and large active areas.
Features
Applications
S2506-02: Visible to near infrared range
S2506-04: Visible-cut
S6775, S6967: Visible to near infrared range, high sensitivity,
high-speed response, large active area
S6775-01: Visible-cut, high sensitivity,
high-speed response, large active area
FSO (free space optics)
Optical switches
Laser radar, etc.
Plastic package: 7 × 7.8 mm
Photosensitive area size
S2506 series: 2.77 × 2.77 mm
S6775 series, S6967: 5.5 × 4.8 mm
General ratings / Absolute maximum ratings
Type no.
S2506-02
S2506-04
S6775
S6775-01
S6967
Package
Photosensitive
area size
Effective
photosensitive
area
(mm)
(mm2)
2.77 × 2.77
7.7
5.5 × 4.8
26.4
Absolute maximum ratings
Power
Operating
dissipation
temperature
P
Topr
(mW)
(°C)
Reverse
voltage
VR max.
(V)
Storage
temperature
Tstg
(°C)
150
Plastic
35
-25 to +85
-40 to +100
50
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Type no.
S2506-02
S2506-04
S6775
S6775-01
S6967
Spectral
response
range
λ
Peak
sensitivity
wavelength
λp
(nm)
320 to 1100
760 to 1100
320 to 1100
700 to 1100
320 to 1060
(nm)
960
960
900
Photosensitivity
S
(A/W)
λp
660 nm 780 nm 830 nm
0.4
0.7 0.45
0.68
0.65 0.45
0.56
0.48 0.5
0.25
0.55 0.6
0.48 0.54
0.55 0.6
Short
circuit
current
Isc
100 lx
(μA)
7.3
4.1
30
21
26
Temp.
Cut-off
Terminal
Dark current coefficient frequency
capacitance
of
fc
ID
Ct
ID
RL=50 Ω
f=1 MHz
TCID
-3 dB
Typ. Max.
(pF)
(nA) (nA) (times/°C) (MHz)
0.1*1
0.5*2
10*1
10*2
5*2
1.15
25*1
15*1
15*2
40*2
50*2
50*2
NEP
(W/Hz1/2)
1.0 × 10-14*1
1.8 × 10-14*2
1.9 × 10-14*2
2.0 × 10-14*2
*1: VR=12 V
*2: VR=10 V
www.hamamatsu.com
1
Si PIN photodiodes
S2506/S6775 series, S6967
Spectral response
S2506 series
S6775 series, S6967
(Typ. Ta=25 °C)
0.8
(Typ. Ta=25 °C)
0.8
S6775
0.7
QE=100 %
S2506-02
Photosensitivity (A/W)
Photosensitivity (A/W)
QE=100 %
0.6
0.5
0.4
0.3
0.2
0.1
0
200
S6775-01
0.7
600
800
0.5
0.4
S6967
0.3
0.2
0.1
S2506-04
400
0.6
0
200
1000
400
Wavelength (nm)
600
800
1000
Wavelength (nm)
KPINB0348EB
KPINB0349EB
Photo sensitivity temperature characteristic (S2506-02)
(Typ.)
+1.5
1 nA
+1.0
+0.5
S6775/-01
S2506-02/-04
100 pA
S6967
10 pA
0
-0.5
200
(Typ. Ta=25 °C)
10 nA
Dark current
Temperature coefficient (%/°C)
Dark current vs. reverse voltage
400
600
800
1000
1 pA
0.01
0.1
1
10
100
Reverse voltage (V)
Wavelength (nm)
KPINB0063EC
KPINB0168ED
2
Si PIN photodiodes
S2506/S6775 series, S6967
Dark current vs. ambient temperature
Terminal capacitance vs. reverse voltage
(Typ.)
10 μA
S6775/-01, S6967 (VR=10 V)
1 μA
Terminal capacitance
100 nA
S2506-02/-04 (VR=12 V)
Dark current
(Typ. Ta=25 °C, f=1 MHz)
1 nF
10 nA
1 nA
100 pA
100 pF
S6967
S6775/-01
10 pF
S2506-02/-04
10 pA
1 pA
-20
0
20
40
60
1 pF
0.1
80
1
Ambient temperature (°C)
10
100
Reverse voltage (V)
KPINB0169EC
KPINB0170EC
Directivity
S2506-02
30°
20°
10°
0°
S6775/-01, S6967
10°
(Typ. Ta=25 °C)
20°
30°
30°
10°
0°
100%
100%
80%
80%
40°
40°
40%
60°
(Typ. Ta=25 °C)
20°
30°
40°
60%
50°
50°
10°
40°
60%
70°
20°
60°
70°
20%
50°
50°
40%
60°
70°
60°
70°
20%
80°
80°
80°
80°
90°
90°
90°
90°
Relative sensitivity
Relative sensitivity
KPINB0065EB
KPINB0401EA
3
Si PIN photodiodes
S2506/S6775 series, S6967
Dimensional outline (unit: mm, tolerance unless otherwise noted: ±0.1)
Center of
Photosensitive area
A
Photosensitive area
B
1.0
0.5
2.7 ± 0.2 0.2 max.
Incident light
1.1
1.4
2.3 ± 0.3
14.3 ± 1
7.8 ± 0.2
3.5 ± 0.2
ϕ5.0
7.0 ± 0.2
5.08
0.5
Type no.
(0.3)
(0.5)
(0.5)
(0.3)
(0.4)
1.0
(0.6)
1.0
(0.6)
(0.4)
Details of lead root
A
B
S2506 series
2.8 ± 0.2
2.77 × 2.77
S6775/series
S6967
3.65 ± 0.2
5.5 × 4.8
Lead surface finish: Silver plating
Packing: Polyethylene pack [anti-static type]
(200 pcs/pack)
KPINA0084ED
4
Si PIN photodiodes
S2506/S6775 series, S6967
Related information
www.hamamatsu.com/sp/ssd/doc_en.html
Precautions
∙ Notice
∙ Metal, ceramic, plastic package products
Technical information
∙ Si photodiode/Application circuit examples
Information described in this material is current as of November, 2014.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or
a suffix "(Z)" which means developmental specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product
use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741
China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No. KPIN1048E06 Nov. 2014 DN
5