Si PIN photodiode S12271 Large area, high-speed PIN photodiode for UV to near IR photometry The S12271 is a high-speed Si PIN photodiode having a large photosensitive area of φ4.1 mm. Using quartz glass as the light input window, this photodiode delivers high sensitivity extending to the UV region and is suitable for optical power meters. Features Applications Quartz glass window Optical power meters High UV sensitivity Radiation detectors Large photosensitive area: φ4.1 mm High-speed response: 60 MHz (VR=100 V) Structure Parameter Package Photosensitive area size Effective photosensitive area Specification TO-8 φ4.1 13.2 Unit mm mm mm2 Absolute maximum ratings Parameter Reverse voltage Power dissipation Operating temperature Storage temperature Symbol VR max P Topr Tstg Specification 120 50 -20 to +60 -55 to +80 Unit V mW °C °C Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Photosensitivity Dark current Temperature coefficient of ID Terminal capacitance Cutoff frequency Noise equivalent power Symbol λ λp S ID TCID Ct fc NEP Condition λ=λp λ=200 nm VR=100 V VR=100 V, f=1 MHz VR=100 V, RL=50 Ω -3 dB λ=λp, VR=100 V Min. 0.4 0.08 - Typ. 190 to 1100 960 0.5 0.10 0.1 1.15 10 Max. 30 20 Unit nm nm A/W A/W nA times/°C pF - 60 - MHz - 1.5 × 10-14 - W/Hz1/2 www.hamamatsu.com 1 Si PIN photodiode S12271 Spectral response Photosensitivity temperature characteristics (Typ. Ta=25 °C) 0.6 (Typ.) +2.0 Temperature coefficient (%/°C) QE=100% Photosensitivity (A/W) 0.5 0.4 0.3 0.2 0.1 +1.5 +1.0 +0.5 0 -0.5 -1.0 190 300 400 500 600 700 800 900 1000 1100 0 190 300 400 500 600 700 800 900 1000 1100 Wavelength (nm) Wavelength (nm) KPINB0386EA KPINB0387EA Dark current vs. reverse voltage Terminal capacitance vs. reverse voltage (Typ. Ta=25 °C) 10 nA Terminal capacitance Dark current 1 nA 100 pA 1 nF 100 pF 10 pF 10pA 1 pA 0.01 (Typ. Ta=25 °C) 10 nF 0.1 1 10 100 1 pF 0.1 1 10 100 Reverse voltage (V) Reverse voltage (V) KPINB0388EA KPINB0389EA 2 Si PIN photodiode S12271 Dimensional outline (unit: mm) 13.9 ± 0.2 10.5 ± 0.1 X 12.35 ± 0.1 Y 0.5 max. 2.8 ± 0.2 Quartz glass Photosensitive surface (15) 5.0 ± 0.2 Photosensitive area 4.1 ġġġ0.45 Lead 7.5 ± 0.2 Index mark ( 1.4) 1.0 max. Case Distance from photosensitive area center to cap center -0.4≤X≤+0.4 -0.4≤Y≤+0.4 KPINA0114EA Precautions against UV light exposure ∙ When UV light irradiation is applied, the product characteristics may degrade. Such examples include degradation of the product’s UV sensitivity and increase in dark current. This phenomenon varies depending on the irradiation level, irradiation intensity, usage time, and ambient environment and also varies depending on the product model. Before employing the product, we recommend that you check the tolerance under the ultraviolet light environment that the product will be used in. ∙ Exposure to UV light may cause the characteristics to degrade due to gas released from the resin bonding the product’s component materials. As such, we recommend that you avoid applying UV light directly on the resin and apply it on only the inside of the photosensitive area by using an aperture or the like. 3 Si PIN photodiode S12271 Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Metal, ceramic, plastic package products Technical information ∙ Si photodiode/Application circuit examples Information described in this material is current as of October, 2015. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KPIN1085E03 Oct. 2015 DN 4