Si PIN photodiodes S5971 S5972 S5973 series High-speed photodiodes (S5973 series: 1 GHz) The S5971, S5972 and S5973 series are high-speed Si PIN photodiodes designed for visible to near infrared light detection. These photodiodes provide wideband characteristics at a low bias, making them suitable for optical communications and other high-speed photometry. The S5973 series includes a mini-lens type (S5973-01) that can be efficiently coupled to an optical fiber and a violet sensitivity enhanced type (S5973-02) ideal for violet laser detection. Features Applications High-speed response S5971 : 100 MHz (VR=10 V) S5972 : 500 MHz (VR=10 V) S5973 series: 1 GHz (VR=3.3 V) Optical fiber communications High-speed photometry Violet laser detection (S5973-02) Low price High sensitivity S5973-02: 0.3 A/W, QE=91 % (λ=410 nm) High reliability Structure / Absolute maximum ratings Type no. S5971 S5972 S5973 S5973-01 S5973-02 Dimensional outline/ Window material*1 Package Photosensitive area size Effective photosensitive area (mm) φ1.2 φ0.8 (mm2) 1.1 0.5 φ0.4 0.12 (mm) (1)/K Reverse voltage VR Max. (V) TO-18 Absolute maximum ratings Power Operating Storage dissipation temperature temperature P Topr Tstg (mW) (°C) (°C) 20 (2)/L (3)/K 50 -40 to +100 -55 to +125 Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics Type no. Photosensitivity S (A/W) Spectral Peak response sensitivity range wavelength λ λp λp S5971 S5972 S5973 S5973-01 S5973-02 *1: *2: *3: *4: (nm) (nm) 320 to 1060 900 800 0.64 0.57 320 to 1000 0.52 760 0.4 660 nm 780 nm 0.55 0.6 0.55 0.51 0.47 0.42 0.37 0.44 0.3*2 830 nm Short circuit current Isc 100 lx (μA) 1.0 0.42 0.09 0.42 0.07 Dark current ID Typ. (nA) 0.07*3 0.01*3 Max. (nA) 1*3 0.5*3 0.001*4 0.1*4 Noise Temp. Terminal equivalent power coefficient Cutoff capacitance frequency NEP of Ct fc VR=10 V ID f=1 MHz λ=λp TCID (times/°C) (GHz) 0.1*3 0.5*3 (pF) 1*4 1.6*4 3*3 1.15 (W/Hz1/2) 7.4 × 10-15 3.1 × 10-15 1.1 × 10-15 *4 1.9 × 10-15 *2 *4 Window material K: borosilicate glass, L: lens type borosilicate glass λ=410 nm VR=10 V VR=3.3 V www.hamamatsu.com 1 Si PIN photodiodes S5971, S5972, S5973 series Spectral response Photosensitivity temperature characteristics (Typ. Ta=25 °C) 0.7 (Typ.) +1.5 S5971 S5971 Temperature coefficient (%/°C) Photosensitivity (A/W) 0.6 0.5 0.4 S5973-02 S5972 0.3 S5973/-01 0.2 0.1 0 300 400 500 600 700 800 +1.0 S5972 S5973 series +0.5 0 -0.5 200 900 1000 1100 Wavelength (nm) 400 600 800 Wavelength (nm) KPINB0157EB KPINB0158EA Frequency response +10 1000 Cutoff frequency vs. reverse voltage (Typ. Ta=25 °C, λ=830 nm, RL=50 Ω) (Typ. Ta=25 °C, λ=830 nm, RL=50 Ω) 10 GHz S5973 series 0 Cutoff frequency Relative output (dB) S5973 series (VR=3.3 V) -3 S5971 (VR=10 V) -10 1 GHz S5972 100 MHz S5971 S5972 (VR=10 V) -20 1 MHz 10 MHz 100 MHz 1 GHz 10 GHz 10 MHz 1 10 100 Reverse voltage (V) Frequency KPINB0159EB KPINB0160EB 2 Si PIN photodiodes S5971, S5972, S5973 series Dark current vs. reverse voltage Terminal capacitance vs. reverse voltage (Typ. Ta=25 °C, f=1 MHz) (Typ. Ta=25 °C) 100 pA 100 pF Terminal capacitance S5971 Dark current 10 pA S5972 1 pA S5971 10 pF S5972 S5973 series S5973 series 100 fA 0.1 10 1 1 pF 0.1 100 1 Reverse voltage (V) 10 100 Reverse voltage (V) KPINB0161EA KPINB0162EA Fiber coupling characteristics (S5973-01) X, Y direction (Typ. Ta=25 °C, λ=780 nm, NA=0.2) 0.6 0.5 0.4 0.3 0.2 Optical fiber (core diameter: 50 µm) Y X 0.1 0 -0.8 Z Light source=780 nm LD Z=0.5 mm -0.4 0 +0.4 +0.8 Shift from lens center X, Y (mm) (Typ. Ta=25 °C, λ=780 nm, NA=0.2) 0.6 Fiber-coupled sensitivity (A/W) Fiber-coupled sensitivity (A/W) Z direction 0.5 0.4 0.3 Optical fiber (core diameter: 50 µm) Y 0.2 X Z Light source =780 nm LD X, Y= 0 mm 0.1 0 0.2 0.5 1 2 5 10 20 Distance between lens and fiber end Z (mm) KPINB0088EA KPINB0089EA 3 Si PIN photodiodes S5971, S5972, S5973 series Dimensional outlines (unit: mm) 3.6 ± 0.2 Photosensitive surface Photosensitive surface 0.45 Lead 13 0.45 Lead 4.6 ± 0.1 13.5 4.7 ± 0.1 2.8 Window 3.0 ± 0.2 5.4 ± 0.2 0.65 ± 0.15 Window 1.5 lens 5.4 ± 0.2 3.75 ± 0.2 (2) S5973-01 2.8 (1) S5971, S5972, S5973 2.54 ± 0.2 2.54 ± 0.2 Case KPINA0022EB Case KPINA0023EA (3) S5973-02 0.45 Lead 3.75 ± 0.2 4.7 ± 0.1 2.8 Photosensitive surface 5.4 ± 0.2 13 Window 2.0 min. 2.54 ± 0.2 Case KPINA0061EB 4 Si PIN photodiodes S5971, S5972, S5973 series Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Metal, ceramic, plastic package products Technical information ∙ Si photodiode / Application circuit example Information described in this material is current as of November, 2015. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KPIN1025E08 Nov. 2015 DN 5