Si photodiode S12742-254 Photodiode with interference filter for monochromatic light (254 nm) detection The S12742-254 uses an interference filter for its window and is sensitive only to monochromatic light. The spectral response width is extremely narrow at 10 nm (FWHM), allowing accurate photometry without any effects of stray light. The center wavelength is 254 nm typ. The S12742-254 can be customized to support other peak sensitivity wavelengths such as 340 nm, 560 nm, and 650 nm. Features Applications Si photodiode with interference filter Analytical instruments Monochromatic light (254 nm) detection UV monitors (mercury lamp monitor, etc.) Structure Parameter Package Photosensitive area Specification TO-5 3.61 × 3.61 Unit mm Absolute maximum ratings Parameter Reverse voltage Operating temperature Storage temperature Symbol VR max Topr Tstg Condition Ta=25 °C Value 5 -20 to +60 -55 to +80 Unit V °C °C Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Ta=25 °C) Parameter Center wavelength Spectral response halfwidth Photosensitivity Dark current Dark current temperature coefficient Rise time Terminal capacitance Shunt resistance Noise equivalent power Symbol CWL Condition FWHM S ID λ=254 nm VR=10 mV TCID tr Ct Rsh NEP VR=0 V, RL=1 kΩ 10% to 90% VR=0 V, f=10 kHz VR=10 mV VR=0 V, λ=λp Min. 252 Typ. 254 Max. 256 Unit nm 8 10 12 nm 12 - 18 2 25 mA/W pA - 1.12 - times/°C - 1 - μs 0.4 - 500 5 9.1 × 10-14 750 - pF GΩ W/Hz1/2 www.hamamatsu.com 1 Si photodiode S12742-254 Spectral response (Typ. Ta=25 °C) 50 Photosensitivity (mA/W) 40 30 20 10 0 200 Note: Wavelengths other than 254 nm will be provided on a made to order basis. 300 400 500 600 700 800 Wavelength (nm) KSPDB0333EA Dark current vs. reverse voltage Terminal capacitance vs. reverse voltage (Typ. Ta=25 °C) 1 nA Terminal capacitance Dark current 100 pA 10 pA 1 pA 100 fA 0.01 0.1 1 10 Reverse voltage (V) (Typ. Ta=25 °C) 10 nF 1 nF 100 pF 10 pF 0.1 1 10 Reverse voltage (V) KSPDB0332EA KSPDB0335EA 2 Si photodiode S12742-254 ϕ8.3 ± 0.1 X ϕ9.15 ± 0.2 Y ϕ6.1 ± 0.1 Dimensional outline (unit: mm) 0.4 max. Photosensitive surface ϕ0.45 Lead 9.64 ± 0.2 (20) 2.6 Photosensitive area 3.61 × 3.61 ϕ5.08 ± 0.2 Tolerance unless otherwise noted: ±0.2 Case Distance from photosensitive area center to cap center -0.3≤X≤+0.3 -0.3≤Y≤+0.3 The glass window may extend a maximum of 0.2 mm beyond the upper surface of the cap. KSPDA0205EA 3 Si photodiode S12742-254 Precautions against UV light exposure ∙ When UV light irradiation is applied, the product characteristics may degrade. Such examples include degradation of the product’s UV sensitivity and increase in dark current. This phenomenon varies depending on the irradiation level, irradiation intensity, usage time, and ambient environment and also varies depending on the product model. Before employing the product, we recommend that you check the tolerance under the ultraviolet light environment that the product will be used in. ∙ Exposure to UV light may cause the characteristics to degrade due to gas released from the resin bonding the product’s component materials. As such, we recommend that you avoid applying UV light directly on the resin and apply it on only the inside of the photosensitive area by using an aperture or the like. Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Metal, ceramic, plastic packages Technical information ∙ Si photodiode / Application circuit examples Information described in this material is current as of October, 2015. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KSPD1082E03 Oct. 2015 DN 4