s3204-08 etc kpin1051e

Si PIN photodiode
S3204/S3584 series
Large active area Si PIN photodiodes
Features
Applications
Sensitivity matching with BGO and CsI (TI) scintillators
Scintillation detectors
High quantum efficiency (Unsealed type): QE=85 % (λ=540 nm)
Hodoscopes
Low capacitance
TOF counters
High-speed response
High stability
Good energy resolution
Structure / Absolute maximum ratings
Type No.
S3204-08
S3204-09
S3584-08
S3584-09
Window
material
Active area
Depletion
layer
thickness
(mm)
(mm)
Epoxy resin
Unsealed
Epoxy resin
Unsealed
Reverse
voltage
VR max
Absolute maximum ratings
Power
Operating
dissipation
temperature
P
Topr
(mW)
(°C)
Storage
temperature
Tstg
(°C)
18 × 18
0.3
100
100
-20 to +60
-20 to +80
28 × 28
Note: Absolute maximum ratings are the values that must not be exceeded at any time. If even one of the absolute maximum ratings
is exceeded even for a moment, the product quality may be impaired. Always be sure to use the product within the absolute
maximum ratings.
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Type No.
S3204-08
S3204-09
S3584-08
S3584-09
Spectral
response
range
λ
Peak
sensitivity
wavelength
λp
(nm)
(nm)
340 to 1100
960
Dark
Cut-off
Short
Terminal
current
Temp. Frequency
circuit
capacitance
ID
NEP
fc
current VR=70 V coefficient
Ct
VR=70 V
D
of
I
Isc
VR=70 V f=1MHz
TCID
LSO
BGO CsI(TI)
-3 dB VR=70 V
100 lx Typ. Max.
λ=λp
420 nm 480 nm 540 nm
(nA) (nA) (times/°C) (MHz)
(A/W) (A/W) (A/W) (A/W)
(μA)
(pF)
(W/Hz1/2)
0.20
0.30
0.36
340
6
20
20
130
6.6 × 10 -14
0.22
0.33
0.41
300
0.66
1.12
0.20
0.30
0.36
780
10 30
10
300
8.6 × 10 -14
0.22
0.33
0.41
730
Photo sensitivity
S
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1
Si PIN photodiode
S3204/S3584 series
Spectral response (without window)
Spectral response
(Typ. Ta=25 °C)
0.7
0.6
0.6
S3204/S3584-09
0.5
Photo sensitivity (A/W)
Photo sensitivity (A/W)
S3204/S3584-08
0.4
0.3
0.2
0.1
0
300
(Typ. Ta=25 °C)
0.7
0.5
0.4
0.3
0.2
0.1
400
500
600
700
800
900
0
300
1000 1100
Wavelength (nm)
400
500
600
700
800
900
Wavelength (nm)
KPINB0227ED
KPINB0264ED
Photo sensitivity temperature characteristic
Dark current vs. reverse voltage
(Typ.)
+1.5
(Typ. Ta=25 °C)
100 nA
+1.0
10 nA
Dark current
Temperature coefficient (%/°C)
1000 1100
+0.5
S3204-08/-09
1 nA
S3584-08/-09
0
-0.5
300
400
500
600
700
800
900
1000 1100
100 pA
0.1
1
10
100
Reverse voltage (V)
Wavelength (nm)
KPINB0093ED
KPINB0228EE
2
Si PIN photodiode
S3204/S3584 series
Terminal capacitance vs. reverse voltage
(Typ. Ta=25 °C, f=1 MHz)
10 nF
S3584-08/-09
Terminal capacitance
S3204-08/-09
1 nF
100 pF
10 pF
0.1
1
10
100
Reverse voltage (V)
KPINB0230EE
Dimensional outline (unit: mm)
S3204-08
S3204-09
25.5 +0
- 0.6
25.5 +0
- 0.6
3.4
25.5 +0
- 0.6
25.5 +0
- 0.6
3.4
2.54 ± 0.2
1.2
White ceramic
0.45
Lead
10
Photosensitive
surface
0.45
Lead
1.75
5.0 ± 0.2
1.75
5.0 ± 0.2
White ceramic
10
Photosensitive
surface
1.2
Resin
2.54 ± 0.2
Active area
18 × 18
Active area
18 × 18
KPINA0040EC
KPINA0110EA
3
Si PIN photodiode
S3204/S3584 series
S3584-08
S3584-09
35.6 +0
- 0.8
35.6 +0
- 0.8
3.4
35.6 +0
- 0.8
35.6 +0
- 0.8
3.4
Active area
28 × 28
White ceramic
0.45
Lead
2.54 ± 0.2
10
1.2
Photosensitive
surface
10
White ceramic
2.54 ± 0.2
Photosensitive
surface
1.2
Resin
Active area
28 × 28
0.45
Lead
1.75
5.0 ± 0.2
5.0 ± 0.2
1.75
KPINA0041ED
KPINA0111EA
Information described in this material is current as of January, 2012.
Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact
us for the delivery specification sheet to check the latest information.
Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or
a suffix "(Z)" which means developmental specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product
use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No. KPIN1051E10 Jan. 2012 DN
4