PHOTODIODE Si PIN photodiode S3590-08/-09 Large area sensors for scintillation detection Features Applications l Higher sensitivity and low dark current than conventional type l Sensitivity matching with BGO and CsI (TI) scintillators l High quantum efficiency: QE=85 % (λ=540 nm) l Low capacitance l High-speed response l High stability l Good energy resolution l Scintillation detectors l Calorimeters l Hodoscopes l TOF counters l Air shower counters l Particle detectors, etc. ■ General ratings / Absolute maximum ratings Type No. S3590-08 S3590-09 Window material Epoxy resin Window-less Active area Depletion layer thickness (mm) (mm) 10 × 10 0.3 Reverse voltage VR Max. 100 Absolute maximum ratings Power Operating dissipation temperature P Topr (mW) (°C) 100 -20 to +60 Storage temperature Tstg (°C) -20 to +80 ■ Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Type No. S3590-08 S3590-09 * VR=70 V S h ort Dark Term inal Temp. circuit current coefficient C ut-off capacitance NEP cu rre n t ID VR=70 V of ID F reque nc y Ct Isc f= 1MHz fc LSO BGO CsI(Tl) 100 lx Typ. Max. TCID 420 nm 480 nm 540 nm 1/2 (pF) (W/Hz ) (A/W) (A/W) (A/W) (A/W) (µA) (nA) (nA) (tim es/°C ) (MHz) 0.66 0.20 0.30 0.36 -14 100 2* 6* 1.12 40 * 40 * 3.8 × 10 0.66 0.22 0.33 0.41 S p ectral P e ak response se nsitivity range wavelength λ=λp λ λp (nm) 320 to 1100 (nm) 960 Photo sensitivity S 1 Si PIN photodiode ■ Spectral response S3590-08 (Typ. Ta=25 ˚C) (Typ. Ta=25 ˚C) 0.7 PHOTO SENSITIVITY (A/W) 0.6 0.5 0.4 0.3 0.2 0.1 0.5 QE=100 % 0.4 0.3 0.2 0.1 0 200 400 600 800 1000 0 200 1200 400 WAVELENGTH (nm) 600 800 1000 800 1000 KPINB0093ED (Typ. Ta=25 ˚C, f=1 MHz) 10 nF 1 nA TERMINAL CAPACITANCE DARK CURRENT DARK CURRENT 600 WAVELENGTH (nm) (Typ. VR=70 V) 1 µA 10 nA 10 nA 1 nA 100 pA 10 pA 100 400 KPINB0263EB 100 nA 10 0 ■ Dark current vs. ambient temperature ■ Terminal capacitance vs. reverse voltage (Typ. Ta=25 ˚C) 1 +0.5 WAVELENGTH (nm) ■ Dark current vs. reverse voltage 100 pA 0.1 +1.0 -0.5 200 1200 KPINB0231EB 100 nA (Typ.) +1.5 TEMPERATURE COEFFICIENT (%/˚C) 0.6 PHOTO SENSITIVITY (A/W) ■ Photo sensitivity temperature characteristic S3590-09 0.7 S3590-08/-09 1000 0 20 40 60 80 AMBIENT TEMPERATURE (˚C) REVERSE VOLTAGE (V) KPINB0232EC 1 nF 100 pF 10 pF 0.1 1 10 100 1000 REVERSE VOLTAGE (V) KPINB0233ED KPINB0234EC ■ Dimensional outline (unit: mm) +0 14.5 -0.5 PHOTOSENSITIVE SURFACE WHITE CERAMIC 0.45 LEAD +0 10 0.7 ACTIVE AREA 1.78 ± 0.2 10.0 10.0 12.7 - 0.5 1.4 1.25 5.0 ± 0.2 The coating resin may extend a maximum of 0.1 mm beyond the upper surface of the package. KPINA0014EF Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 2 Cat. No. KPIN1052E06 Oct. 2007 DN