s3590-08 etc kpin1052e

Si PIN photodiode
S3590-08/-09/-18/-19
Large active area Si PIN photodiode
Features
Applications
Sensitivity matching with BGO and CsI (TI) scintillators:
S3590-08/-09
Scintillation detectors
Sensitivity matching with blue scintillator (LSO, GSO, etc.):
S3590-18/-19
Bare chip type (unsealed): S3590-09/-19
High quantum efficiency: S3590-09 (λ=540 nm)
S3590-19 (λ=400 nm)
Hodoscopes
TOF counters
Radiation detection
X-ray detection
Low capacitance
High-speed response
High stability
Good energy resolution
Structure / Absolute maximum ratings
Type No.
S3590-08
S3590-09
S3590-18
S3590-19
Window
material
Epoxy resin
Unsealed
Epoxy resin
Unsealed
Active area
Depletion
layer
thickness
(mm)
(mm)
10 × 10
0.3
Reverse
voltage
VR max
100
Absolute maximum ratings
Power
Operating
dissipation
temperature
P
Topr
(mW)
(°C)
100
-20 to +60
Storage
temperature
Tstg
(°C)
-20 to +80
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Type No.
S3590-08
S3590-09
S3590-18
S3590-19
Spectral
response
range
λ
Peak
sensitivity
wavelength
λp
(nm)
(nm)
340 to 1100
960
Dark
Short
Terminal
Temp.
Cut-off
current
circuit
coefficient Frequency capacitance
ID
NEP
current VR=70 V
of ID
Ct
VR=70 V
fc
f=1MHz
TCID
Isc
LSO
BGO CsI(TI)
VR=70 V VR=70 V
100 lx Typ. Max. VR=70 V
λ=λp
420 nm 480 nm 540 nm
(nA) (nA) (times/°C) (MHz)
(A/W) (A/W) (A/W) (A/W)
(μA)
(pF)
(W/Hz1/2)
0.20
0.30
0.36
100
3.8 × 10 -14
0.66
2
6
0.22
0.33
0.41
90
1.12
40
40
0.65
0.28
0.34
0.38
100
4
10
7.6 × 10 -14
0.58
0.33
0.37
0.4
86
Photo sensitivity
S
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1
Si PIN photodiode
S3590-08/-09/-18/-19
Spectral response
S3590-08
S3590-09
(Typ. Ta=25 °C)
0.7
QE=100%
0.5
0.4
0.3
0.2
0.1
0
300
QE=100 %
0.6
Photosensitivity (A/W)
Photosensitivity (A/W)
0.6
(Typ. Ta=25 °C)
0.7
0.5
0.4
0.3
0.2
0.1
400
500
600
700
800
900
0
300
1000 1100
400
500
Wavelength (nm)
600
700
800
900
Wavelength (nm)
KPINB0231EC
KPINB0263EC
S3590-18
S3590-19 (Bare chip type)
(Typ. Ta=25 °C)
0.7
(Typ. Ta=25 °C)
0.7
QE=100 %
QE=100 %
0.6
Photosensitivity (A/W)
Photosensitivity (A/W)
0.6
0.5
0.4
0.3
0.2
0.1
0
300
1000 1100
0.5
0.4
0.3
0.2
0.1
400
500
600
700
800
900
1000 1100
Wavelength (nm)
0
300
400
500
600
700
800
900
1000 1100
Wavelength (nm)
KPINB0223EC
KPINB0224EC
2
Si PIN photodiode
S3590-08/-09/-18/-19
Dark current vs. reverse voltage
Photosensitivity temperature characteristic
(Typ.)
(Typ. Ta=25 °C)
100 nA
+1.0
10 nA
Dark current
Temperature coefficient (%/°C)
+1.5
+0.5
S3590-18/-19
1 nA
0
-0.5
300
S3590-08/-09
400
500
600
700
800
900
1000 1100
Wavelength (nm)
100 pA
0.1
1
10
100
Reverse voltage (V)
KPINB0093EE
KPINB0232ED
Terminal capacitance vs. reverse voltage
(Typ. Ta=25 °C, f=1 MHz)
Terminal capacitance
10 nF
1 nF
S3590-18/-19
S3590-08/-09
100 pF
10 pF
0.1
1
10
100
Reverse voltage (V)
KPINB0234ED
3
Si PIN photodiode
S3590-08/-09/-18/-19
Dimensional outline (unit: mm)
S3590-08/-18
S3590-09/-19
+0
+0
14.5 - 0.5
14.5 - 0.5
1.4
Active area
10 × 10
White ceramic
White ceramic
Photosensitive
surface
0.45
Lead
10
0.45
Lead
0.7
Photosensitive
surface
10
0.7
Resin
1.78 ± 0.2
Active area
10 × 10
1.78 ± 0.2
+0
+0
12.7 - 0.5
12.7 - 0.5
1.4
1.25
KPINA0014EG
5.0 ± 0.2
1.25
5.0 ± 0.2
The coating resin may extend a
maximum of 0.1 mm beyond the
upper surface of the package.
KPINA0098EE
Information described in this material is current as of July, 2012.
Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact
us for the delivery specification sheet to check the latest information.
Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or
a suffix "(Z)" which means developmental specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product
use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No. KPIN1052E09 Jul. 2012 DN
4