Si PIN photodiode S2744/S3588-08, -09 Large active area Si PIN photodiodes Features Applications Sensitivity matching with BGO and CsI (TI) scintillators Scintillation detectors High quantum efficiency (Unsealed type): QE=85 % (λ=540 nm) Hodoscopes Low capacitance TOF counters High-speed response High stability Good energy resolution Structure / Absolute maximum ratings Type No. Active area Window material (mm) S2744-08 S2744-09 S3588-08 S3588-09 Epoxy resin Unsealed Epoxy resin Unsealed Absolute maximum ratings Power Operating dissipation temperature P Topr (mW) (°C) Depletion layer thickness Reverse voltage VR max (mm) Storage temperature Tstg (°C) 10 × 20 0.3 100 100 -20 to +60 -20 to +80 3 × 30 Note: Absolute maximum ratings are the values that must not be exceeded at any time. If even one of the absolute maximum ratings is exceeded even for a moment, the product quality may be impaired. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Type No. S2744-08 S2744-09 S3588-08 S3588-09 Spectral response range λ Peak sensitivity wavelength λp (nm) (nm) (A/W) 340 to 1100 960 0.66 Photo sensitivity S λ=λp LSO BGO CsI(TI) 420 nm 480 nm 540 nm (A/W) (A/W) (A/W) 0.20 0.30 0.36 0.22 0.33 0.41 0.20 0.30 0.36 0.22 0.33 0.41 Short circuit current Isc 100 lx (μA) 200 180 100 80 Dark Terminal current Cut-off Temp. capacitance ID NEP coefficient Frequency Ct VR=70 V fc of ID VR=70 V f=1MHz TCID VR=70 V VR=70 V Typ. Max. (nA) (nA) (times/°C) 3 www.hamamatsu.com 10 (MHz) (pF) 25 85 40 40 1.12 (W/Hz1/2) 4.7 × 10 -14 1 Si PIN photodiode S2744/S3588-08, -09 Photo sensitivity temperature characteristic Spectral response (Typ. Ta=25 °C) 0.7 Temperature coefficient (%/°C) 0.6 Photo sensitivity (A/W) S2744/S3588-09 0.5 0.4 S2744/S3588-08 0.3 0.2 0.1 0 300 400 500 600 700 800 900 (Typ.) +1.5 +1.0 +0.5 0 -0.5 300 1000 1100 400 500 600 700 800 900 Wavelength (nm) Wavelength (nm) KPINB0265EC KPINB0093ED Dark current vs. reverse voltage 1 nA 100 pA 0.1 (Typ. Ta=25 °C, f=1 MHz) 10 nF Terminal capacitance Dark current Terminal capacitance vs. reverse voltage (Typ. Ta=25 °C) 10 nA 1 10 1000 1100 100 Reverse voltage (V) 1 nF S2744-08/-09 100 pF 10 pF 0.1 S3588-08/-09 1 10 100 Reverse voltage (V) KPINB0220EB KPINB0222EB 2 Si PIN photodiode S2744/S3588-08, -09 Dimensional outline (unit: mm) S2744-08 S2744-09 27.0 +0 - 0.6 27.0 +0 - 0.6 2.0 +0 +0 14.2 - 0.4 14.2 - 0.4 2.0 2.0 ± 0.2 Photosensitive Resin surface Photosensitive surface 0.5 2.0 ± 0.2 Active area 10 × 20 White ceramic 10 10 0.5 Active area 10 × 20 White ceramic ȁ0.45 Lead ȁ0.45 Lead 2.5 5.0 ± 0.2 5.0 ± 0.2 2.5 The potting resin may extend a maximum of 0.1 mm beyond the upper surface of the package. KPINA0108EA KPINA0039EC S3588-08 S3588-09 34.0 +0 - 0.8 +0 1.52 ± 0.2 Photosensitive surface 0.45 Photosensitive surface ȁ0.45 Lead White ceramic 1.1 ȁ0.45 Lead 1.1 The potting resin may extend a maximum of 0.1 mm beyond the upper surface of the package. 2.5 ± 0.2 2.5 ± 0.2 White ceramic 10 10 Resin Active area 3 × 30 1.52 ± 0.2 Active area 3 × 30 0.45 1.2 +0 1.2 5.8 - 0.4 5.8 - 0.4 34.0 +0 - 0.8 KPINA0109EA KPINA0042EC 3 Si PIN photodiode S2744/S3588-08, -09 Information described in this material is current as of October, 2011. Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact us for the delivery specification sheet to check the latest information. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KPIN1049E06 Oct. 2011 DN