HAMAMATSU S9703-11

PHOTO IC
Photo IC for laser beam synchronous detection
S9703-10/-11
High sensitivity, high-speed response
S9703 series photo IC uses a high-speed PIN photodiode designed for laser beam synchronous detection. When compared to S9703 and
S9703-01 previously marketed, S9703-10 and S9703-11 have reduced their reflection effects in the package. Two types of current
amplifiers are available with a gain of 6 times (S9703-11) and 20 times (S9703-10) that can be selected according to laser power to be
used. Tape-and-reel shipment is available (S9703-30 and S9703-31). HAMAMATSU also provides S9684 series photo ICs that use a dualelement Si PIN photodiode.
Features
Applications
l High sensitivity
l Print start timing detection for laser printers, digital copiers,
Current amplifier gain: 20 times (S9703-10)
6 times (S9703-11)
l Digital output
l Small package
l Suitable for lead-free solder reflow
l Active area: 2.84 × 0.5 mm
fax machines, etc.
■ Absolute maximum ratings (Ta=25 °C, unless otherwise noted)
Parameter
Symbol
Supply voltage
Vcc
Power dissipation *1
P
Output voltage *2
Vo
Output current
Io
Ro terminal current
IRO
Operating temperature
Topr
Storage temperature
Tstg
*1: Power dissipation decreases at a rate of 4 mW/°C above Ta=25 °C.
*2: Vcc=+0.5 V or less
Value
-0.5 to +7
300
-0.5 to +7
5
3
-25 to +80
-40 to +85
Unit
V
mW
V
mA
mA
°C
°C
■ Electrical and optical characteristics (Ta=25 °C, λ=780 nm, Vcc=5 V, Ro=5.1 kΩ, unless otherwise noted)
Parameter
Symbol
Condition
Current consumption
Icc
No input
High level output voltage
VOH IOH=4 mA
Low level output voltage
VOL IOL=4 mA *3
S9703-10
Threshold input power
PTH
S9703-11
S9703-10
H→L propagation
tPHL
delay time
S9703-11
PI=66 µW (S9703-10)
S9703-10
L→H propagation
PI=225 µW (S9703-11)
tPLH
Duty ratio 1:1
delay time
S9703-11
CL=15 pF *4
Rise time
tr
Fall time
tf
Maximum input power
PI Max.
*3: Input power [PI]=66 µW (S9703-10), PI=225 µW (S9703-11)
Min.
4.6
17
60
-
Typ.
0.9
22
75
100
75
200
150
4
4
-
Max.
1.5
0.3
27
90
200
150
250
200
7
7
PTH × 8
Unit
mA
V
V
µW
ns
ns
ns
µW
100 %
INPUT LIGHT
INTENSITY
50 %
0%
tPHL
tPLH
90 %
OUTPUT
PRELIMINARY DATA
Apr. 2007
1.5 V
10 %
tf
tr
KPICC0112EA
1
Photo IC for laser beam synchronous detection
S9703-10/-11
■ Block diagram
Vcc
0.1 µF
Vref
5V
Vo
CURRENT
AMPLIFIER
Ro
PD
EXTERNAL
GAIN RESISTANCE
Ro
GND
KPICC0113EA
■ Function
S9703-10/-11 photo IC integrates a photodiode chip and an IC chip into the same package. The photodiode chip is internally
connected to the IC chip as shown in the block diagram. S9703-10/-11 should be used with terminal Ro connected to an external
gain resistance Ro.
A photocurrent is generated when a laser beam enters the photodiode. This photocurrent is fed to the input terminal of the IC and,
after being amplified by the current amplifier, flows to the external gain resistance. At this time, voltages VRO at terminal Ro is
given by the following expression.
VRO=A × S × PI × Ro [V] ·········· (1)
A: Current amplifier gain (S9703-10: 20 times, S9703-11: 6 times)
S: Photodiode sensitivity [A/W] (approx. 0.44 A/W at 780 nm)
PI: Input power [W]
Ro: External gain resistance [Ω]; usable range 2 kΩ to 10 kΩ
VRO is input to the internal comparator and compared with the internal reference voltage Vref (approx. 1 V) so the output Vo is
“High” when VRO < Vref or “Low” when VRO > Vref.
In equation (1), set the Ro value so that VRO is 2 to 3 V.
■ Dimensional outline (unit: mm)
3.2 ± 0.2
(INCLUDING BURR)
0.66 ± 0.2
1.0 ± 0.4
1.0 ± 0.4
3.9
4.0 *
3.4
MIRROR AREA
RANGE
3.8
4.0 *
0.8 0.8 0.8 0.8
3.0 *
4.2 ± 0.2
PHOTOSENSITIVE
SURFACE
0.5
2.84
0.15 ± 0.2
(10 ×) 0.3
(10 ×) 0.4
CENTER OF
ACTIVE AREA
0.05
0.35
5.0 ± 0.3
0.45 ± 0.3
3.0 *
2.8
0.1 ± 0.1
0.15
2.4
MIRROR AREA
RANGE
2.9
3.0 *
0.75
0.45 ± 0.3
1.3
PHOTOSENSITIVE
SURFACE
Tolerance unless otherwise noted: ±0.1, ±2˚
Shaded area indicates burr.
Chip position accuracy with respect to the
package dimensions marked *
X, Y≤±0.2, θ≤±2˚
Vcc
NC
OUT
GND
Ro
GND
GND
GND
GND
GND
KPICA0071EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
2
Cat. No. KPIC1068E02
Aug. 2007 DN