Photo IC for laser beam synchronous detection S9703-10/-11 High sensitivity, high-speed response The S9703 series photo IC uses a high-speed PIN photodiode designed for laser beam synchronous detection. When compared to the S9703 and S9703-01 previously marketed, the S9703-10 and S9703-11 have reduced their reflection effects in the package. Two types of current amplifiers are available with a gain of 6 times (S9703-11) and 20 times (S9703-10) that can be selected according to laser power to be used. Tape-and-reel shipment is available (S9703-30 and S9703-31). Hamamatsu also provides the S9684 series photo ICs that use a dual-element Si PIN photodiode. Features Applications High sensitivity Current amplifier gain: 20 times (S9703-10) 6 times (S9703-11) Print start timing detection for laser printers, digital copiers, fax machines, etc. Digital output Small package Suitable for lead-free solder reflow Photosensitive area: 2.84 × 0.5 mm Absolute maximum ratings (Ta=25 °C, unless otherwise noted) Parameter Symbol Value Supply voltage Vcc -0.5 to +7 Power dissipation*1 P 300 Output voltage*2 Vo -0.5 to +7 Output current Io 5 Ro terminal current 3 IRO Operating temperature Topr -25 to +80 Storage temperature Tstg -40 to +85 Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to product within the absolute maximum ratings. *1: Power dissipation decreases at a rate of 4 mW/°C above Ta=25 °C. *2: Vcc=+0.5 V or less www.hamamatsu.com Unit V mW V mA mA °C °C use the 1 Photo IC for laser beam synchronous detection S9703-10/-11 Electrical and optical characteristics (Ta=25 °C, λ=780 nm, Vcc=5 V, Ro=5.1 kΩ, unless otherwise noted) Parameter Current consumption High level output voltage Low level output voltage S9703-10 Threshold input power S9703-11 S9703-10 H→L propagation delay time S9703-11 S9703-10 L→H propagation delay time S9703-11 Rise time Fall time Maximum input power Symbol Icc VOH VOL Condition No input IOH=4 mA IOL=4 mA*3 Min. 4.6 17 60 - PTH tPHL tPLH tr tf PI max PI=66 μW (S9703-10) PI=225 μW (S9703-11) Duty ratio 1:1 CL=15 pF*4 Typ. 0.9 22 75 100 75 200 150 4 4 - Max. 1.5 0.3 27 90 200 150 250 200 7 7 PTH × 8 Unit mA V V μW ns ns ns μW *3: Input power [PI]=66 μW (S9703-10), PI=225 μW (S9703-11) *4: Measured with a pulse-driven laser diode. Rise time and fall time of input light-pulse are 1 ns or less. 100% Input light level 50% 0% tPHL tPLH 90% Output 1.5 V 10% tf tr KPICC0112EA Block diagram Vcc Vref Current amplifier PD 0.1 μF 5V Vo Ro External gain resistance Ro GND KPICC0113EA 2 Photo IC for laser beam synchronous detection S9703-10/-11 Function The S9703-10/-11 photo IC integrates a photodiode chip and an IC chip into the same package. The photodiode chip is internally connected to the IC chip as shown in the block diagram. The S9703-10/-11 should be used with terminal Ro connected to an external gain resistance Ro. A photocurrent is generated when a laser beam enters the photodiode. This photocurrent is fed to the input terminal of the IC and, after being amplified by the current amplifier, flows to the external gain resistance. At this time, voltages VRO at terminal Ro is given by the following expression. VRO=A × S × PI × Ro [V] ∙∙∙∙∙∙∙∙ (1) A: Current amplifier gain (S9703-10: 20 times, S9703-11: 6 times) S: Photodiode sensitivity [A/W] (approx. 0.44 A/W at 780 nm) PI: Input power [W] Ro: External gain resistance [Ω]; usable range 2 kΩ to 10 kΩ VRO is input to the internal comparator and compared with the internal reference voltage Vref (approx. 1 V) so the output Vo is “High” when VRO < Vref or “Low” when VRO > Vref. In equation (1), set the Ro value so that VRO will be 2 to 3 V. Dimensional outline (unit: mm) 3.2 ± 0.2 (Including burr) 0.66 ± 0.2 1.0 ± 0.4 1.0 ± 0.4 4.0* 3.9 3.4 Mirror area range 3.8 4.0* 0.8 0.8 0.8 0.8 3.0* 4.2 ± 0.2 Photosensitive surface 0.5 2.84 0.15 ± 0.2 (10 ×) 0.3 (10 ×) 0.4 Center of Photosensitive area 0.05 0.35 5.0 ± 0.3 0.45 ± 0.3 0.45 ± 0.3 2.8 Photosensitive surface 0.1 ± 0.1 2.4 Mirror area range 0.15 0.75 3.0* 2.9 3.0* 1.3 Tolerance unless otherwise noted: ±0.1, ±2° Shaded area indicates burr. Chip position accuracy with respect to the package dimensions marked * X, Y≤±0.2, θ≤±2° Vcc NC OUT GND Ro GND GND GND GND GND KPICA0071EA 3 Photo IC for laser beam synchronous detection S9703-10/-11 Measured example of temperature profile with our hot-air reflow oven for product testing These products support lead-free soldering. After unpacking, store them in an environment at a temperature of 30 °C or less and a humidity of 60% or less, and perform soldering within 24 hours. 300 °C 240 °C max. Temperature 220 °C 190 °C 170 °C Soldering 40 s max. Preheat 70 to 90 s Time KPICB0171EA Information described in this material is current as of March, 2013. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KPIC1068E03 Mar. 2013 DN 4