SUM70040E www.vishay.com Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () MAX. ID (A) d 0.0040 at VGS = 10 V 120 0.0046 at VGS = 7.5 V 120 Qg (TYP.) • ThunderFET® power MOSFET • Maximum 175 °C junction temperature • 100 % Rg and UIS tested 76 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TO-263 APPLICATIONS D • Power supply - Secondary synchronous rectification • DC/DC converter • Power tools S D Top View G • Motor drive switch G • DC/AC inverter Ordering Information: SUM70040E-GE3 (Lead (Pb)-free and halogen-free) • Battery management S • OR-ing N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C ID 120 d IDM 480 Avalanche Current IAS 73 Single Avalanche Energy L = 0.1 mH TC = 25 °C Maximum Power Dissipation a TC = 125 °C Operating Junction and Storage Temperature Range EAS PD V 120 d Pulsed Drain Current (t = 100 μs) a UNIT 266 375 b 125 b A mJ W TJ, Tstg -55 to +175 °C SYMBOL LIMIT UNIT RthJA 40 RthJC 0.4 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient (PCB Mount) c Junction-to-Case (Drain) °C/W Notes a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR4 material). d. Package limited. S13-0735-Rev. A, 13-Apr-15 Document Number: 62995 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM70040E www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 100 - - VGS(th) VDS = VGS, ID = 250 μA 2.5 - 4 IGSS VDS = 0 V, VGS = ± 20 V - - ± 250 VDS = 100 V, VGS = 0 V - - 1 VDS = 100 V, VGS = 0 V, TJ = 125 °C - - 150 VDS = 100 V, VGS = 0 V, TJ = 175 °C - - 5 mA VDS 10 V, VGS = 10 V 120 - - A Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Dynamic IDSS ID(on) RDS(on) gfs VGS = 10 V, ID = 20 A - 0.0032 0.0040 VGS = 7.5 V, ID = 15 A - 0.0035 0.0046 VDS = 15 V, ID = 20 A - 82 - - 5100 - V nA μA S b Input Capacitance Ciss Output Capacitance Coss - 2025 - Reverse Transfer Capacitance Crss - 165 - Total Gate Charge c Qg - 76 120 Gate-Source Charge c Gate-Drain Charge c VDS = 50 V, VGS = 10 V, ID = 20 A - 23 - 17 - f = 1 MHz 0.6 3.3 6.6 - 15 30 VDD = 50 V, RL = 5 ID 10 A, VGEN = 10 V, Rg = 1 - 22 40 - 55 100 - 15 30 - - 480 A - 0.8 1.5 V Rg c Rise Time c Turn-Off Delay Time c Fall Time c td(on) tr td(off) pF - Qgd Gate Resistance Turn-On Delay Time Qgs VGS = 0 V, VDS = 50 V, f = 1 MHz tf nC ns Drain-Source Body Diode Ratings and Characteristics b (TC = 25 °C) Pulsed Current ISM Forward Voltage a VSD IF = 10 A, VGS = 0 V Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S13-0735-Rev. A, 13-Apr-15 Document Number: 62995 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM70040E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 150 VGS = 10 V thru 7 V 200 120 150 ID - Drain Current (A) ID - Drain Current (A) VGS = 6 V 100 50 90 TC = 25°C 60 TC = 125°C 30 VGS = 5 V TC = - 55°C 0 0 0 2 4 6 8 10 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 200 10 0.008 TC = - 55 °C TC = 25 °C RDS(on) - On-Resistance (Ω) gfs - Transconductance (S) 160 120 TC = 125 °C 80 0.006 VGS = 7.5 V 0.004 VGS = 10 V 0.002 40 0 0 0 14 28 42 56 0 70 30 60 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 120 10 8900 VDS = 25 V VGS - Gate-to-Source Voltage (V) ID = 20 A 6675 C - Capacitance (pF) 90 ID - Drain Current (A) Ciss 4450 Coss 2225 8 VDS = 50 V 6 VDS = 80 V 4 2 Crss 0 0 0 20 40 60 80 VDS - Drain-to-Source Voltage (V) Capacitance S13-0735-Rev. A, 13-Apr-15 100 0 20 40 60 Qg - Total Gate Charge (nC) 80 Gate Charge Document Number: 62995 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM70040E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 ID = 20 A 1.8 10 IS - Source Current (A) RDS(on) - On-Resistance (Normalized) 2.1 VGS = 10 V 1.5 1.2 0.9 TJ = 150 °C 1 0.1 TJ = 25 °C 0.01 0.6 0.001 - 50 - 25 0 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage 4 0.020 ID = 250 μA 3.4 0.012 VGS(th) (V) RDS(on) - On-Resistance (Ω) 0.016 0.008 2.8 TJ = 150 °C 2.2 0.004 TJ = 25 °C 1.6 - 50 - 25 0.000 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) 10 0 25 50 75 100 125 150 175 TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage VDS - Drain-to-Source Voltage (V) 125 120 ID = 10 mA 115 110 105 100 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature S13-0735-Rev. A, 13-Apr-15 Document Number: 62995 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM70040E www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1000 IDM Limited ID - Drain Current (A) 10 μs 100 ID Limited 100 μs 10 Limited by RDS(on)* 1 ms 1 TC = 25 °C Single Pulse 10 ms BVDSS Limited 0.1 0.01 100 ms - DC 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 Safe Operating Area Normalized Effective Transient Thermal Impedance 1 0.1 0.01 0.001 0.0001 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S13-0735-Rev. A, 13-Apr-15 Document Number: 62995 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM70040E www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 °C) - Normalized Transient Thermal Impedance Junction to Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62995. S13-0735-Rev. A, 13-Apr-15 Document Number: 62995 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-263 (D2PAK): 3-LEAD -B- L2 6 E1 K D4 -A- c2 D2 D3 A E L3 L D D1 E3 A A b2 b e c Detail “A” E2 0.010 M A M 2 PL 0° L4 -5 ° INCHES L1 DETAIL A (ROTATED 90°) c* c c1 c1 M b b1 SECTION A-A MIN. MAX. MIN. MAX. A 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 1.397 b2 0.045 0.055 1.143 Thin lead 0.013 0.018 0.330 0.457 Thick lead 0.023 0.028 0.584 0.711 Thin lead 0.013 0.017 0.330 0.431 Thick lead 0.023 0.027 0.584 0.685 c2 0.045 0.055 1.143 1.397 D 0.340 0.380 8.636 9.652 D1 0.220 0.240 5.588 6.096 D2 0.038 0.042 0.965 1.067 D3 0.045 0.055 1.143 1.397 D4 0.044 0.052 1.118 1.321 E 0.380 0.410 9.652 10.414 E1 0.245 - 6.223 - E2 0.355 0.375 9.017 9.525 E3 0.072 0.078 1.829 1.981 e Notes 1. Plane B includes maximum features of heat sink tab and plastic. 2. No more than 25 % of L1 can fall above seating plane by max. 8 mils. 3. Pin-to-pin coplanarity max. 4 mils. 4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM. 5. Use inches as the primary measurement. 6. This feature is for thick lead. Revison: 30-Sep-13 MILLIMETERS DIM. 0.100 BSC 2.54 BSC K 0.045 0.055 1.143 1.397 L 0.575 0.625 14.605 15.875 L1 0.090 0.110 2.286 2.794 L2 0.040 0.055 1.016 1.397 L3 0.050 0.070 1.270 1.778 L4 M 0.010 BSC - 0.254 BSC 0.002 - 0.050 ECN: T13-0707-Rev. K, 30-Sep-13 DWG: 5843 1 Document Number: 71198 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AN826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.355 0.635 (16.129) (9.017) (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Document Number: 73397 11-Apr-05 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000