MEMS-FPI spectrum sensor C13272-01 Ultra-compact near infrared spectrum sensor that integrates MEMS tunable filter and photosensor The MEMS-FPI spectrum sensor is a ultra-compact sensor that houses a MEMS-FPI (Fabry-Perot Interferometer) tunable filter that can vary its transmission wavelength depending on the applied voltage and InGaAs PIN photodiode in a single package. The spectral response range is 1550 to 1850 nm. It is suitable for installation in compact devices for identifying materials in plastic and solutions and other similar applications. Features Applications Built-in Hamamatsu InGaAs PIN photodiode single element chip Screening of plastic, solutions, and the like Spectral response range: 1550 to 1850 nm Installation into mobile measuring devices Ultra-compact: TO-5 package Gas detection Use in combination with portable devices such as smartphones and tablets. Ultra light: 1 g Hermetically sealed package: high reliability under high humidity Built-in thermistor Absolute maximum ratings (Ta=25 °C, unless otherwise noted) Parameter Filter control voltage*1 Photosensor reverse voltage Photosensor forward current Operating temperature*2 Storage temperature*2 Recommended soldering conditions Value Vλ1550nm + 0.5 1 10 -40 to +85 -40 to +125 260 °C or less, within 10 s Unit V V mA °C °C - *1: Applying a voltage that is +0.5 V or higher than Vλ1550nm (filter control voltage to transmit light at λ=1550 nm) at a specific temperature may damage the MEMS-FPI tunable filter. For Vλ1550nm of individual products at Ta=25°C, see the final inspection sheet. *2: No condensation When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. www.hamamatsu.com 1 MEMS-FPI spectrum sensor C13272-01 Electrical and optical characteristics of MEMS-FPI spectrum sensor (Ta=25 °C, unless otherwise noted) Parameter Spectral response range*3 Spectral resolution (FWHM)*4 Wavelength temperature dependence*5 Wavelength reproducibility*6 Settling time (0 V→Vλ1550nm)*7 Dark current*8 Thermistor resistance Symbol λ - Min. - Typ. 1550 to 1850 ±2 Max. 20 0.9 - Unit nm nm nm/°C nm - - 1 - ms ID - 9.6 4 - 40 10.4 nA kΩ *3: Use a band-pass filter that cuts wavelength outside the spectral response range. *4: Incident angle=0°, photosensor NA=0.09 *5: λ=1550 nm *6: When filter control voltage, incident light condition, and usage environment, etc. are constant *7: Time for the output signal to reach 99% of the stable signal level when the control voltage of the MEMS-FPI tunable filter is varied from 0 V to Vλ1550nm *8: VR=0.5 V Electrical and optical characteristics of built-in InGaAs PIN photodiode (Ta=25 °C, unless otherwise noted) Parameter Photosensitive area Spectral response range Peak sensitivity wavelength Photosensitivity Detectivity Noise equivalent power Terminal capacitance Symbol A λ λp S D* NEP Ct Condition Min. λ=λp λ=λp λ=λp VR=0 V, f=1 MHz 1800 1.0 9 × 1010 - Filter control voltage vs. element temperature (typical example) (Incident angle=0°, photosensor NA=0.09) 0.6 0.4 0.2 0 -0.2 -0.4 -0.6 -0.8 -50 -25 0 25 50 75 100 Element temperature (°C) Max. 2050 9 × 10-14 20 Unit mm nm nm A/W cm·Hz1/2/W W/Hz1/2 pF Peak transmisson wavelength vs. filter control voltage (typical example) 1900 Peak transmission wavelength (nm) Deviation from Vλ1550nm (Ta=25 °C) (V) 0.8 Typ. ϕ0.1 900 to 2100 1950 1.2 2.5 × 1011 4 × 10-14 8 (Ta=25 °C, incident angle=0°, photosensor NA=0.09) 1850 1800 1750 1700 1650 1600 1550 1500 20 25 30 35 40 Filter control voltage (V) KACCB0400EA KACCB0401EA 2 MEMS-FPI spectrum sensor C13272-01 Spectral resolution vs. peak transmisson wavelength (typical example) Spectral resolution (FWHM) (nm) 20 (Ta=25 °C, incident angle=0°, photosensor NA=0.09) 18 16 14 12 10 1550 1600 1650 1700 1750 1800 1850 Peak transmisson wavelength (nm) KACCB0402EA Peak transmission wavelength vs. element temperature (typical example) Peak transmission wavelength (nm) 1900 (Incident angle=0°, photosensor NA=0.09) Vλ1850nm Vλ1750nm Vλ1700nm Vλ1650nm Vλ1550nm 1850 1800 1750 1700 1650 1600 1550 1500 -50 -25 0 25 50 75 100 Element temperature (°C) KACCB0403EB 3 MEMS-FPI spectrum sensor C13272-01 Thermistor resistance vs. temperature (typical example) Thermistor resistance (kΩ) 1000 100 10 1 -50 -25 0 25 50 75 100 Temperature (°C) KACCB0404EB Transmittance of MEMS-FPI tunable filter vs. wavelength (typical example) 100 90 Transmittance (%) 80 70 [Ta=25 °C, input line spectrum, line spectrum resolution (FWMH)= 3 nm max., incident angle=0°, photosensor NA=0.09] Vλ1850nm Vλ1750nm Vλ1700nm Vλ1650nm Vλ1550nm 60 50 40 30 20 10 0 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 · Unwanted transmission in a range outside the spectral response range may occur due to higher order mode and the like as a MEMS-FPI tunable filter’s feature. Use of a band-pass filter is recommended for removing this effect if a white light is taken for a source. · There is tolerance in filter control voltage for arbitrary peak transmission wavelength from unit to unit. The individual data for Vλ1850nm and Vλ1550nm at Ta=25 °C is to be described in an inspection sheet attached with a product on delivery. Wavelength (nm) KACCB0405EA 4 MEMS-FPI spectrum sensor C13272-01 Dimensional outline (unit: mm) ϕ9.14 ± 0.2 ϕ8.2 ± 0.1 ϕ1.5 ± 0.1 Photosensitive area ϕ0.1 Filter ϕ0.75 Photosensitive area position accuracy: ±0.25 Filter position accuracy: ±0.3 (with respect to center of package base) 5.81 ± 0.2 +0.25 3.09 - 0.2 5.5 ± 0.5 0.41 ± 0.1 Photosensitive surface 2.04 - 0.2 MEMS-FPI tunable filter +0.25 Borosilicate glass [Transmittance 90% min. (1550 to 1850 nm)] ϕ0.45 Lead 45° ± 3° ϕ5.8 ± 0.2 CASE LOW-MIR NTC-2 NTC-1 UP-MIR CASE InGaAs-Anode InGaAs-Cathode KACCA0385EA Pin connections Pin no. 1 2 3 4 5 6 7 8 Name CASE LOW-MIR NTC-2 NTC-1 UP-MIR CASE InGaAs-Anode InGaAs-Cathode Input/Output Input Output Output Input Output Output Description Case connection MEMS-FPI tunable filter lower electrode For thermistor For thermistor MEMS-FPI tunable filter upper electrode Case connection 5 MEMS-FPI spectrum sensor C13272-01 Marking information DataMatrix **##### DataMatrix Type no. 72 32 C 1 - 01 C13272-01 Marking on cap Description Shape: rectangle Cell size: 0.14 × 0.14 mm Symbol size: 12 × 26 cell Input information: C13272-01, **##### (“Type no.” + “,” + “Serial no.”) Type no. Serial no. **: information on year and month #####: number of five digits (number of individual product) **# ## ## Marking item Serial no. Note: KEYENCE 2-D code reader SR-1000 is recommended for reading the DataMatrix. KACCC0837EA Connection example LOW-MIR MEMS-FPI tunable filter DC voltage control unit UP-MIR I/V amplifier InGaAs-Cathode CASE InGaAs PIN photodiode Thermistor InGaAs-Anode NTC-2 NTC-1 Control signal PC ADC Temperature monitor MEMS-FPI spectrum sensor KACCC0804EA MEMS-FPI spectrum sensor structure The MEMS-FPI spectrum sensor is composed of a MEMS-FPI tunable filter, photosensor (photodiode), and the like. It has a simple structure in which a MEMS-FPI tunable filter and photosensor is arranged on the same axis as the direction of the incident light. Though this product is a spectrum sensor, it uses a single-element photosensor and does not require an expensive multichannel photosensor. Internal structure MEMS-FPI tunable filter Spacer Photosensor Wiring board KIRDC0108EA 6 MEMS-FPI spectrum sensor C13272-01 MEMS-FPI tunable filter The MEMS-FPI tunable filter has an upper mirror and a lower mirror that are placed opposite each other with an air gap in between them. When a voltage is applied across the mirrors, an electrostatic attractive force is produced to adjust the air gap. To facilitate this action, the upper mirror has a membrane (thin film) structure. If the air gap is mλ/2 (m: integer), it functions as a filter that allows wavelengths near λ to pass through. When the filter control voltage is increased, the air gap is narrowed by the electrostatic attractive force, and the transmission peak wavelength shifts to the short-wavelength side. MEMS-FPI tunable filter cross section White light Sacrificial layer etching hole Upper mirror Lower mirror Substrate Air gap Transmission wavelength λ KIRDC0109EA Precautions Note the following when handling the product and also after installing into a device. Handling ∙ When touching the product, it is recommended to wear gloves or use tweezers. Touching the product with bare hands may cause degradation in characteristics and plating corrosion and may lead to problems with solder wettability. ∙ Perform work in a clean place. Filter control voltage ∙ Apply filter control voltage as defined by the absolute maximum ratings. Applying a filter control voltage exceeding the absolute maximum ratings may damage the MEMS-FPI tunable filter. Static electricity ∙ The MEMS-FPI spectrum sensor is an electrostatic sensitive device. When handling the product, precautions need to be taken to avoid damage and deterioration due to static electricity. Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Safety consideration Technical information ∙ MEMS-FPI spectrum sensor/Q&A ∙ Infrared detectors 7 MEMS-FPI spectrum sensor C13272-01 Information described in this material is current as of April, 2016. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KACC1250E01 Apr. 2016 DN 8