TSM500N03 A14

TSM500N03
30V N-Channel Power MOSFET
TO-252
(DPAK)
Key Parameter Performance
Pin Definition:
1. Gate
2. Drain
3. Source
Parameter
Value
Unit
VDS
30
V
RDS(on) (max)
VGS = 10V
50
VGS = 4.5V
80
Qg
Application
mΩ
4
nC
Block Diagram
Portable application
DC to DC converter
Ordering Information
Part No.
Package
Packing
TSM500N03CP ROG
TO-252
2.5kpcs / 13” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds
N-Channel MOSFET
Absolute Maximum Ratings (TC=25°C unless otherwise noted)
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
12.5
A
8
A
IDM
40
A
Power Dissipation @ TC=25 C
PD
12.5
W
Operating Junction Temperature
TJ
150
°C
TSTG
-55 to +150
°C
Symbol
Limit
Unit
Thermal Resistance - Junction to Case
RӨJC
10
Thermal Resistance - Junction to Ambient
RӨJA
110
Parameter
TC=25°C
Continuous Drain Current
Pulsed Drain Current
TC=100°C
(Note 1)
o
Storage Temperature Range
ID
Thermal Performance
Parameter
°C/W
1/5
Version: A14
TSM500N03
30V N-Channel Power MOSFET
Electrical Specifications (TC=25°C unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
BVDSS
30
--
--
V
--
40
50
--
65
80
1
1.7
3
--
--
1
--
--
25
IGSS
--
--
±100
Qg
--
4
--
Qgs
--
1.6
--
Qgd
--
2.4
--
Ciss
--
270
--
Coss
--
70
--
Crss
--
50
--
td(on)
--
7
--
tr
--
30
--
td(off)
--
10
--
tf
--
3
--
VGS = 0V, IS = 5A
VSD
--
--
1.3
V
VGS = 0V, IS = 10A
trr
--
17
--
ns
dIF/dt = 100A/µs
Qrr
--
10
--
nC
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
VGS = 0V, ID = 250µA
VGS = 10V, ID = 8A
VGS = 4.5V, ID = 8A
VDS = VGS, ID = 250µA
Zero Gate Voltage Drain Current
Gate Body Leakage
RDS(ON)
VGS(TH)
VDS = 30V, VGS = 0V
VDS = 24V, Tc = 150°C
VGS = ±20V, VDS = 0V
IDSS
mΩ
V
µA
nA
Dynamic
(Note 2,3)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(Note 2,3)
VDS = 24V, ID = 10A,
VGS = 4.5V
(Note 2,3)
Input Capacitance
VDS = 25V, VGS = 0V,
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
nC
pF
Switching
Turn-On Delay Time
Turn-On Rise Time
(Note 2,3)
Turn-Off Delay Time
Turn-Off Fall Time
(Note 2,3)
VDD = 15V, ID = 10A,
(Note 2,3)
VGS = 10V, RGEN =3.3Ω
(Note 2,3)
ns
Source-Drain Diode Ratings and Characteristic
Diode-Source Forward Voltage
Reverse Recovery Time
(Note 2)
Reverse Recovery Charge
(Note 2)
Note:
1. Pulse width limited by safe operating area
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%
3. Switching time is essentially independent of operating temperature.
2/5
Version: A14
TSM500N03
30V N-Channel Power MOSFET
Electrical Characteristics Curves
Output Characteristics
Capacitance
Drain-Source On-Resistance
Gate-Source Voltage vs. Gate Charge
Safe Operation Area
Thermal Transient Impedance
3/5
Version: A14
TSM500N03
30V N-Channel Power MOSFET
TO-252 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y
M
L
= Year Code
= Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
= Lot Code
4/5
Version: A14
TSM500N03
30V N-Channel Power MOSFET
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
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Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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5/5
Version: A14