TSM090N03CP A14

TSM090N03CP
30V N-Channel Power MOSFET
TO-252
(DPAK)
Key Parameter Performance
Pin Definition:
1. Gate
2. Drain
3. Source
Parameter
Value
Unit
VDS
30
V
RDS(on) (max)
VGS = 10V
9
VGS = 4.5V
13
Qg
7.5
nC
Block Diagram
Ordering Information
Part No.
mΩ
Package
Packing
TSM090N03CP ROG
TO-252
2.5kpcs / 13” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds
N-Channel MOSFET
Absolute Maximum Ratings (TC=25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
55
A
35
A
IDM
220
A
EAS
45
mJ
IAS
30
A
40
W
0.32
W/ºC
TJ
150
ºC
TSTG
-55 to +150
Symbol
Limit
TC=25ºC
Continuous Drain Current
Pulsed Drain Current
ID
TC=100ºC
(Note 1)
Single Pulse Avalanche Energy
(Note 2)
Single Pulse Avalanche Current (Note 2)
o
Total Power Dissipation
@ TC=25 C
PD
o
Derate above TC=25 C
Operating Junction Temperature
Storage Temperature Range
o
C
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
RӨJC
Thermal Resistance - Junction to Ambient
RӨJA
1/5
3.1
62
Unit
o
C/W
o
C/W
Version: A14
TSM090N03CP
30V N-Channel Power MOSFET
Electrical Specifications (TC=25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
BVDSS
30
--
--
V
--
7.5
9
--
10
13
1
1.6
2.5
--
--
1
--
--
10
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
VGS = 10V, ID = 16A
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
VGS = 4.5V, ID = 8A
VDS = VGS, ID = 250µA
VDS = 30V, VGS = 0V
VDS = 24V, TJ = 125ºC
RDS(ON)
VGS(TH)
IDSS
mΩ
V
µA
Gate Body Leakage
VGS = ±20V, VDS = 0V
IGSS
--
--
±100
nA
Forward Transconductance
VDS = 10V, ID = 8A
gfs
--
14
--
S
Qg
--
7.5
--
Qgs
--
1.3
--
Qgd
--
4.5
--
Ciss
--
750
--
Coss
--
150
--
Crss
--
110
--
Rg
--
2.7
--
td(on)
--
4.8
--
tr
--
12.5
--
td(off)
--
27.6
--
tf
--
8.2
--
IS
--
--
55
A
ISM
--
--
220
A
VSD
--
--
1
V
Dynamic
Total Gate Charge(Note 3,4)
(Note 3,4)
Gate-Source Charge
(Note 3,4)
Gate-Drain Charge
VDS = 15V, ID = 20A,
VGS = 4.5V
Input Capacitance
VDS = 25V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, VDS=0V, f=1MHz
nC
pF
Ω
Switching
Turn-On Delay Time(Note 3,4)
(Note 3,4)
Turn-On Rise Time
(Note 3,4)
Turn-Off Delay Time
VDD=15V , VGS=10V ,
RG=3.3, ID=-15A
Turn-Off Fall Time(Note 3,4)
ns
Source-Drain Diode Ratings and Characteristic
Continuous Drain-Source Diode
Pulse Drain-Source Diode
Diode-Source Forward Voltage
VG=VD=0V , Force Current
VGS = 0V, IS = 1A
Note:
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. VDD=25V,VGS=10V,L=0.1mH,IAS=30A.,RG=25,Starting TJ=25oC
3. The data tested by pulsed , pulse width ≤300µs, duty cycle ≤2%
4. Essentially independent of operating temperature.
2/5
Version: A14
TSM090N03CP
30V N-Channel Power MOSFET
Electrical Characteristics Curve
Normalized RDSON vs. TJ
ID , Continuous Drain Current (A)
Normalized On Resistance (m)
Continuous Drain Current vs. Tc
TJ , Junction Temperature (oC)
TC , Case Temperature (oC)
Gate Charge Waveform
VGS , Gate to Source Voltage (V)
Normalized Gate Threshold Voltage
(V)
Normalized Vth vs. TJ
o
Qg , Gate Charge (nC)
Normalized Transient Impedance
Maximum Safe Operation Area
ID , Continuous Drain Current
(A)
Normalized Thermal Response (RθJC)
TJ , Junction Temperature ( C)
VDS , Drain to Source Voltage
(V)
Square Wave Pulse Duration
(s)
3/5
Version: A14
TSM090N03CP
30V N-Channel Power MOSFET
TO-252 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y = Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
4/5
Version: A14
TSM090N03CP
30V N-Channel Power MOSFET
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
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Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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5/5
Version: A14