TSM090N03CP 30V N-Channel Power MOSFET TO-252 (DPAK) Key Parameter Performance Pin Definition: 1. Gate 2. Drain 3. Source Parameter Value Unit VDS 30 V RDS(on) (max) VGS = 10V 9 VGS = 4.5V 13 Qg 7.5 nC Block Diagram Ordering Information Part No. mΩ Package Packing TSM090N03CP ROG TO-252 2.5kpcs / 13” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds N-Channel MOSFET Absolute Maximum Ratings (TC=25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V 55 A 35 A IDM 220 A EAS 45 mJ IAS 30 A 40 W 0.32 W/ºC TJ 150 ºC TSTG -55 to +150 Symbol Limit TC=25ºC Continuous Drain Current Pulsed Drain Current ID TC=100ºC (Note 1) Single Pulse Avalanche Energy (Note 2) Single Pulse Avalanche Current (Note 2) o Total Power Dissipation @ TC=25 C PD o Derate above TC=25 C Operating Junction Temperature Storage Temperature Range o C Thermal Performance Parameter Thermal Resistance - Junction to Case RӨJC Thermal Resistance - Junction to Ambient RӨJA 1/5 3.1 62 Unit o C/W o C/W Version: A14 TSM090N03CP 30V N-Channel Power MOSFET Electrical Specifications (TC=25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit BVDSS 30 -- -- V -- 7.5 9 -- 10 13 1 1.6 2.5 -- -- 1 -- -- 10 Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA VGS = 10V, ID = 16A Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current VGS = 4.5V, ID = 8A VDS = VGS, ID = 250µA VDS = 30V, VGS = 0V VDS = 24V, TJ = 125ºC RDS(ON) VGS(TH) IDSS mΩ V µA Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA Forward Transconductance VDS = 10V, ID = 8A gfs -- 14 -- S Qg -- 7.5 -- Qgs -- 1.3 -- Qgd -- 4.5 -- Ciss -- 750 -- Coss -- 150 -- Crss -- 110 -- Rg -- 2.7 -- td(on) -- 4.8 -- tr -- 12.5 -- td(off) -- 27.6 -- tf -- 8.2 -- IS -- -- 55 A ISM -- -- 220 A VSD -- -- 1 V Dynamic Total Gate Charge(Note 3,4) (Note 3,4) Gate-Source Charge (Note 3,4) Gate-Drain Charge VDS = 15V, ID = 20A, VGS = 4.5V Input Capacitance VDS = 25V, VGS = 0V, f = 1MHz Output Capacitance Reverse Transfer Capacitance Gate Resistance VGS=0V, VDS=0V, f=1MHz nC pF Ω Switching Turn-On Delay Time(Note 3,4) (Note 3,4) Turn-On Rise Time (Note 3,4) Turn-Off Delay Time VDD=15V , VGS=10V , RG=3.3, ID=-15A Turn-Off Fall Time(Note 3,4) ns Source-Drain Diode Ratings and Characteristic Continuous Drain-Source Diode Pulse Drain-Source Diode Diode-Source Forward Voltage VG=VD=0V , Force Current VGS = 0V, IS = 1A Note: 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=25V,VGS=10V,L=0.1mH,IAS=30A.,RG=25,Starting TJ=25oC 3. The data tested by pulsed , pulse width ≤300µs, duty cycle ≤2% 4. Essentially independent of operating temperature. 2/5 Version: A14 TSM090N03CP 30V N-Channel Power MOSFET Electrical Characteristics Curve Normalized RDSON vs. TJ ID , Continuous Drain Current (A) Normalized On Resistance (m) Continuous Drain Current vs. Tc TJ , Junction Temperature (oC) TC , Case Temperature (oC) Gate Charge Waveform VGS , Gate to Source Voltage (V) Normalized Gate Threshold Voltage (V) Normalized Vth vs. TJ o Qg , Gate Charge (nC) Normalized Transient Impedance Maximum Safe Operation Area ID , Continuous Drain Current (A) Normalized Thermal Response (RθJC) TJ , Junction Temperature ( C) VDS , Drain to Source Voltage (V) Square Wave Pulse Duration (s) 3/5 Version: A14 TSM090N03CP 30V N-Channel Power MOSFET TO-252 Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 4/5 Version: A14 TSM090N03CP 30V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5/5 Version: A14