TSM600N25E 250V N-Channel Power MOSFET TO-251 (IPAK) TO-252 (DPAK) Key Parameter Performance Pin Definition: 1. Gate 2. Drain 3. Source Parameter Value Unit VDS 250 V RDS(on)(max) 0.6 Ω Qg 8.4 nC Features ● ● Block Diagram 100% avalanche tested Improved ESD performance Ordering Information Part No. Package Packing TSM600N25ECH C5G TO-251 75pcs / Tube TSM600N25ECP ROG TO-252 2.5kpcs / 13” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds N-Channel MOSFET Absolute Maximum Ratings Symbol Limit Unit Drain-Source Voltage VDS 250 V Gate-Source Voltage VGS ±30 V 8 A 3.6 A IDM 32 A Parameter Tc = 25ºC Continuous Drain Current Pulsed Drain Current Tc = 100ºC (Note 1) Single Pulse Avalanche Energy (Note 2) ID EAS 147 mJ Repetitive Avalanche Current (Note 1) IAR 8 A Repetitive Avalanche Energy (Note 1) EAR 5.2 mJ PD 52 W dv/dt 4.5 V/ns TJ 150 o Power Dissipation @ TC = 25 C Peak Diode Recovery (Note 3) Operating Junction Temperature TSTG -55 to +150 Symbol Limit Thermal Resistance - Junction to Case RӨJC 2.4 Thermal Resistance - Junction to Ambient RӨJA 110 Storage Temperature Range ºC o C Thermal Performance Parameter Unit o C/W 1/7 Version: A14 TSM600N25E 250V N-Channel Power MOSFET Electrical Specifications (Tc=25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 250 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 4A RDS(ON) -- 0.5 0.6 Ω Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 3 -- 5 V -- -- 1 -- -- 10 IGSS -- -- ±100 µA gfs -- 7.5 -- S Qg -- 8.4 -- Qgs -- 1.9 -- Qgd -- 4 -- Ciss -- 423 -- Coss -- 74 -- Crss -- 12 -- td(on) -- 14 -- tr -- 25 -- td(off) -- 30 -- tf -- 14 -- IS -- -- 8 A ISM -- -- 32 A VGS = 0V, IS = 8A VSD -- -- 1.5 V VGS = 0V, IS = 8A trr -- 157 -- ns dIF/dt = 100A/µs Qrr -- 0.6 -- µC Zero Gate Voltage Drain Current Gate Body Leakage VDS = 250V, VGS = 0V VDS = 200V, Tc = 125ºC VGS = ±30V, VDS = 0V Forward Transconductance (Note 4) VDS = 30V, ID = 4A IDSS µA Dynamic (Note 4,5) Total Gate Charge Gate-Source Charge Gate-Drain Charge (Note 4,5) VDS = 200V, ID = 8A, VGS = 10V (Note 4,5) Input Capacitance VDS = 25V, VGS = 0V, Output Capacitance f = 1.0MHz Reverse Transfer Capacitance nC pF Switching Turn-On Delay Time Turn-On Rise Time (Note 4,5) Turn-Off Delay Time Turn-Off Fall Time (Note 4,5) VDD = 125V, ID = 8A, (Note 4,5) RGEN =25Ω (Note 4,5) ns Source-Drain Diode Ratings and Characteristic Maximum Continuous Drain-Source Diode Forward Current Maximum Pulse Drain-Source Diode Forward Current Diode-Source Forward Voltage Reverse Recovery Time (Note 4) Reverse Recovery Charge (Note 4) Note: 1. Pulse width limited by safe operating area 2. L=3.68mH, IAS =8A, VDD = 50V, RG = 25Ω, Starting TJ = 25ºC 3. ISD ≤8A, di/dt ≤ 200A/µs, VDD ≤ BVDS, Starting TJ=25℃ 4 Pulse test: pulse width ≤300µs, duty cycle ≤2% 5. Switching time is essentially independent of operating temperature. 2/7 Version: A14 TSM600N25E 250V N-Channel Power MOSFET Electrical Characteristics Curves Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3/7 Version: A14 TSM600N25E 250V N-Channel Power MOSFET Electrical Characteristics Curves Drain Current vs. Case Temperature BVDSS vs. Junction Temperature VTH vs. Junction Temperature Capacitance vs. Drain-Source Voltage Maximum Safe Operating Area Transient Thermal Impedance 4/7 Version: A14 TSM600N25E 250V N-Channel Power MOSFET TO-251 Mechanical Drawing Unit: Millimeters Marking Diagram Y M L = Year Code = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) = Lot Code 5/7 Version: A14 TSM600N25E 250V N-Channel Power MOSFET TO-252 Mechanical Drawing Unit: Millimeters Marking Diagram Y M L = Year Code = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) = Lot Code 6/7 Version: A14 TSM600N25E 250V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. 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