TSM4NB50 500V N-Channel Power MOSFET TO-251 (IPAK) TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 500 2.7 @ VGS =10V 3 General Description The TSM4NB50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge. Features Block Diagram ● Low gate charge typical @ 7.6nC ● Low Crss typical @ 18pF ● Fast Switching Ordering Information Part No. Package Packing TSM4NB50CH C5G TO-251 75pcs / Tube TSM4NB50CP ROG TO-252 Note: “G” denotes for Halogen Free 2.5Kpcs / 13” Reel N-Channel MOSFET Absolute Maximum Rating (Ta=25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ±30 V Continuous Drain Current ID 3 A Pulsed Drain Current IDM 12 A Continuous Source Current (Diode Conduction) IS 3 A EAS 110 mJ PDTOT 45 Single Pulse Drain to Source Avalanche Energy (Note 3) o Total Power Dissipation @TC=25 C Operating Junction and Storage Temperature Range W o TJ, TSTG -55 to +150 C Symbol Limit RӨJC 2.78 o 100 o Thermal Performance Parameter Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Notes: Surface mounted on FR4 board t ≤ 10sec RӨJA 1/7 Unit C/W C/W Version: A12 TSM4NB50 500V N-Channel Power MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit 500 -- -- V Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS Drain-Source On-State Resistance VGS = 10V, ID = 1.5A RDS(ON) -- 2.3 2.7 Ω Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 2.5 3.5 4.5 V Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V IDSS -- -- 1 uA Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±10 uA Forward Transconductance VDS = 10V, ID = 1.5A gfs -- 2 -- S Qg -- 7.6 -- Qgs -- 1.8 -- Qgd -- 3.8 -- Ciss -- 327 -- Coss -- 60 -- Crss -- 18 -- td(on) -- 10 -- tr -- 11 -- td(off) -- 19 -- tf -- 14 -- ISD -- -- 3 A 0.9 1.5 V Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching VDS = 300V, ID = 3A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0MHz nC pF c Turn-On Delay Time Turn-On Rise Time VGS = 10V, ID = 3A, Turn-Off Delay Time VDD = 300V, RG = 4.7Ω Turn-Off Fall Time nS Source Drain Diode Source Drain Current Diode Forward Voltage IS = 3A, VGS = 0V VSD -Note 1: Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature Note 2: VDD = 50V, IAS=2A, L=50mH, RG =25Ω, Starting TJ=25ºC Note 3: ISD≤3A, di/dt≤200A/uS, VDD≤BVDSS, Starting TJ=25ºC Note 4: Pulse test: pulse width ≤300uS, duty cycle ≤2% Note 5: Essentially Independent of Operating Temperature 2/7 Version: A12 TSM4NB50 500V N-Channel Power MOSFET Unclamped Inductive Load Test Circuit and Waveform Switching Time Test Circuits for Resistive Load Gate Charge Test Circuit 3/7 Version: A12 TSM4NB50 500V N-Channel Power MOSFET Test Circuit for Inductive Load Switching and Diode Recovery Times 4/7 Version: A12 TSM4NB50 500V N-Channel Power MOSFET TO-251 Mechanical Drawing Unit: Millimeters 5/7 Version: A12 TSM4NB50 500V N-Channel Power MOSFET TO-252 Mechanical Drawing Unit: Millimeters 6/7 Version: A12 TSM4NB50 500V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7/7 Version: A12