Switching Diodes MA3X199 Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 + 0.25 1.45 0.95 1 3 + 0.1 • High breakdown voltage: VR = 200 V • Short reverse recovery time trr • Small package, allowing automatic mounting 0.65 ± 0.15 1.5 − 0.05 0.95 + 0.2 2.9 − 0.05 ■ Features 1.9 ± 0.2 0.65 ± 0.15 2 Reverse voltage (DC) VR 200 V Repetitive peak reverse voltage VRRM 250 V Average forward current IF(AV) 100 mA Repetitive peak forward current IFRM 225 mA Non-repetitive peak forward surge current* IFSM 500 mA Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C + 0.1 0.16 − 0.06 0.1 to 0.3 0.4 ± 0.2 0 to 0.1 Unit 0.8 Rating 1.1 Symbol + 0.2 − 0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter 0.4 − 0.05 For high voltage switching circuit 1 : Anode 2 : NC JEDEC : TO-236 3 : Cathode EIAJ : SC-59 Mini Type Package (3-pin) Marking Symbol: M3A Internal Connection Note) * : t = 1 s 1 3 2 ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 200 V 1 µA Forward voltage (DC) VF IF = 100 mA 1.2 V Terminal capacitance Ct VR = 0 V, f = 1 MHz 3 pF Reverse recovery time* trr IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω 60 ns Note) 1. Rated input/output frequency: 20 MHz 2. * : trr measuring circuit Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 1mA IF = 10 mA IR = 10 mA RL = 100 Ω 1 MA3X199 Switching Diodes IF V F VF Ta IR V R 102 102 1.2 Ta = 150°C Ta = 150°C 10−1 100°C 25°C − 20°C 10−2 0 0.2 0.4 0.6 0.8 1.0 100°C 1 75°C 10−1 25°C 10−2 10−3 1.2 0 40 80 120 160 Terminal capacitance Ct (pF) Reverse current IR (µA) 1 0.1 0.001 VR = 200 V 100 V 10 V −40 f = 1 MHz Ta = 25°C 80 120 Ambient temperature Ta 2 1.0 0.8 0.6 0.4 0.2 40 160 (°C) 10 mA 0.6 3 mA 0.4 0 40 80 120 160 200 Reverse voltage VR (V) 0 −40 0 40 80 120 160 Ambient temperature Ta (°C) 1.2 0 0 240 Ct VR 1.6 1.4 0.01 200 Reverse voltage VR (V) IR Ta 10 IF = 100 mA 0.8 0.2 Forward voltage VF (V) 100 Forward voltage VF (V) 1 10−3 1.0 10 Reverse current IR (µA) Forward current IF (mA) 10 240