VS-1KAB-E Series www.vishay.com Vishay Semiconductors Single Phase Rectifier Bridge, 1.2 A FEATURES • Ease of assembly, installation, inventory • High surge rating • Compact • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION D-38 PRODUCT SUMMARY IO 1.2 A VRRM 100 V to 1000 V Package D-38 Circuit Single phase bridge A 1.2 A diode bridge rectifier assembly designed for new circuits and for replacement service. For printed circuit board applications. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS 1.2 A IO 50 Hz 50 60 Hz 52 A IFSM I2t 50 Hz 17.7 60 Hz 16.1 VRRM TJ A2s 100 to 1000 V -55 to 150 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS VRRM, VRSM (V) VRMS (RECOMMENDED) (V) MAXIMUM (1) LOAD CAPACITANCE (μF) MINIMUM SOURCE RESISTANCE (SEE FIGURE 3) () 100 40 5000 0.5 CROSS REFERENCE PART NUMBER DIN CODE VS-1KAB10E B40C1000 VS-1KAB20E B80C1000 200 80 3300 0.8 VS-1KAB40E B125C1000 400 125 1600 1.5 VS-1KAB60E B250C1000 600 250 1200 2.6 VS-1KAB80E B380C1000 800 380 800 3.0 VS-1KAB100E B500C1000 1000 500 600 5.0 Revision: 04-Apr-14 Document Number: 93559 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-1KAB-E Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL Maximum DC output current IO Maximum peak one cycle, non-repetitive surge current TEST CONDITIONS TA = 45 °C, resistive or inductive load 1.2 TA = 45 °C, capacitive load 1.0 50 Hz half cycle sine wave or 6 ms rectangular pulse IFSM 60 Hz half cycle sine wave or 5 ms rectangular pulse t = 10 ms Maximum I2t capability for fusing t = 8.3 ms I2t t = 10 ms t = 8.3 ms UNITS A Following any rated load condition, and with rated VRRM applied following surge 50 A 52 Rated VRRM applied following surge, initial TJ = 150 °C 12.5 VRRM = 0 following surge, initial TJ = 150 °C 17.7 11.3 A2s 16.1 I2t (1) t = 0.1 to 10 ms, VRRM following surge = 0 177 A2s Maximum peak forward voltage per leg VFM IO = 1.2 A (1.88 Apk) 1.1 V IRM TJ = 25 °C, at rated VRRM 10 Typical peak reverse current per leg TJ = 150 °C, at rated VRRM 500 Maximum I2t VALUES capability for fusing Operating frequency range μA f 40 to 2000 Hz Note (1) I2t for time t = I2t x t x x THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Operating junction and storage temperature range SYMBOL VALUES UNITS TJ, TStg -40 to 150 °C 3 g 0.1 oz. Approximate weight Maximum Peak Output Current (A) Average Output Current (A) 1.4 1.2 Resistive, inductive load 1.0 0.8 0.6 Capacitive load 0.4 0.2 0 0 20 40 60 80 100 120 140 160 60 Following any rated load condition and with rated VRRM applied following surge 50 40 30 20 10 0 10-2 10-1 1 10 Maximum Allowable Ambient Temperature (°C) Equal Amplitude Pulse Train Duration (s) Fig. 1 - Average (DC) Output Current vs. Maximum Allowable Ambient Temperature Fig. 2 - Maximum Non-Repetitive Surge Current vs. Pulse Train Duration (f = 50 Hz) Revision: 04-Apr-14 Document Number: 93559 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-1KAB-E Series www.vishay.com 10 CL = 200 µF CL = 400 µF Average Output Current (A) RMS Supply Voltage (V) 600 Vishay Semiconductors 500 CL = 600 µF 400 CL = 800 µF 300 CL = 1600 µF CL = 1200 µF 200 CL = 3300 µF CL = 5000 µF 100 CL = 7000 µF 5 Resistive, inductive load 2 Capacitive load 1 Initial TJ = 45 °C 0.5 0 0 1 2 3 4 5 6 10-1 1 10 102 103 Minimum Required Value of Source Resistance (Ω) Switch-On Surge Duration (s) Fig. 3 - Minimum Required Source Resistance vs. RMS Supply Voltage and Load Capacitance Fig. 4 - Maximum Switch-On Surge Current vs. Surge Duration CIRCUIT CONFIGURATION AC (+) AC (-) LINKS TO RELATED DOCUMENTS Dimensions Revision: 04-Apr-14 www.vishay.com/doc?95327 Document Number: 93559 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors D-38 DIMENSIONS in millimeters (inches) 5.1 (0.2) 9.5 (0.37) ~ + - ~ 5.1 (0.2) 9.5 (0.37) 10 (0.39) 25.4 (1.0) Ø 0.8 (0.031) 5.1 (0.2) Document Number: 95327 Revision: 04-Jul-08 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000