S1A SERIES_R15.pdf

S1A - S1M
Taiwan Semiconductor
CREAT BY ART
1A, 50V - 1000V Surface Mount Rectifiers
FEATURES
- Glass passivated chip junction
- Ideal for automated placement
- Low forward voltage drop
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: DO-214AC (SMA)
DO-214AC (SMA)
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity: Indicated by cathode band
Weight: 0.06 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
SYMBOL
S1A
S1B
S1D
S1G
S1J
S1K S1M
Maximum repetitive peak reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
V
Maximum average forward rectified current
IF(AV)
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
PARAMETER
Maximum instantaneous forward voltage (Note 1)
@1A
Maximum reverse current @ rated VR
TJ=25°C
TJ=125°C
1
A
40
VF
30
1.1
A
V
1
IR
UNIT
μA
50
Typical reverse recovery time (Note 2)
trr
1.5
μs
Typical junction capacitance (Note 3)
CJ
12
pF
Non-repetitive peak reverse avalanche
energy at 25°C, IAS=1A, L=10mH
ERSM
5
mJ
Typical thermal resistance
RθJL
RθJA
Operating junction temperature range
Storage temperature range
30
85
27
75
°C/W
TJ
- 55 to +175
°C
TSTG
- 55 to +175
°C
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Document Number: DS_D1411068
Version: R15
S1A - S1M
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
PART NO.
PACKING CODE
PACKING CODE
PACKAGE
PACKING
R3
SMA
1,800 / 7" Plastic reel
R2
SMA
7,500 / 13" Paper reel
M2
SMA
7,500 / 13" Plastic reel
SUFFIX
S1x
(Note 1)
SUFFIX
F3
H
Folded SMA
1,800 / 7" Plastic reel
Folded SMA
7,500 / 13" Paper reel
F4
Folded SMA
7,500 / 13" Plastic reel
E3
Clip SMA
1,800 / 7" Plastic reel
E2
Clip SMA
7,500 / 13" Plastic reel
G
F2
Note 1: "x" defines voltage from 50V (S1A) to 1000V (S1M)
EXAMPLE
PREFERRED
PART NO.
PART NO.
PART NO.
S1MHR3G
SUFFIX
S1M
PACKING CODE
PACKING CODE
H
DESCRIPTION
SUFFIX
R3
AEC-Q101 qualified
Green compound
G
RATINGS AND CHARACTERISTICS CURVES (TA=25°C unless otherwise noted)
FIG.1 FORWARD CURRENT DERATING CURVE
FIG. 2 TYPICAL REVERSE CHARACTERISTICS
100
1
0.8
0.6
0.4
0.2
RESISTIVE OR
INDUCTIVE LOAD
0
0
25
50
75
100
125
150
175
INSTANTANEOUS REVERSE CURRENT
(μA)
AVERAGE FORWARD CURRENT (A)
1.2
10
TJ=125°C
1
0.1
TJ=75°C
0.01
TJ=25°C
0.001
0
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
100
8.3ms Single Half Sine Wave
S1A-S1K
10
S1M
1
1
10
NUMBER OF CYCLES AT 60 Hz
Document Number: DS_D1411068
100
20
40
60
80
100
120
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
140
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
100
INSTANTANEOUS FORWARD CURRENT
(A)
PEAK FORWARD SURGE URRENT(A)
LEAD TEMPERATURE (°C)
10
1
Pulse Width=300μs
1% Duty Cycle
0.1
0.4
0.6
0.8
1
1.2
1.4
FORWARD VOLTAGE (V)
1.6
1.8
2
Version: R15
S1A - S1M
Taiwan Semiconductor
FIG. 5 TYPICAL JUNCTION CAPACITANCE
CAPACITANCE (pF)
100
10
f=1.0MHz
Vsig=50mVp-p
1
0.01
0.1
1
10
100
REVERSE VOLTAGE (V)
PACKAGE OUTLINE DIMENSIONS
DO-214AC (SMA)
Unit (mm)
DIM.
Unit (inch)
Min
Max
Min
Max
A
1.27
1.58
0.050
0.062
B
4.06
4.60
0.160
0.181
C
2.29
2.83
0.090
0.111
D
1.99
2.50
0.078
0.098
E
0.90
1.41
0.035
0.056
F
4.95
5.33
0.195
0.210
G
0.10
0.20
0.004
0.008
H
0.15
0.31
0.006
0.012
SUGGESTED PAD LAYOUT
Symbol
Unit (mm)
Unit (inch)
A
1.68
0.066
B
1.52
0.060
C
3.93
0.155
D
2.41
0.095
E
5.45
0.215
MARKING DIAGRAM
P/N =
Specific Device Code
G=
Green Compound
YW =
Date Code
F=
Factory Code
Document Number: DS_D1411068
Version: R15
S1A - S1M
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1411068
Version: R15