2SA2029 SERIES_B1602.pdf

2SA2029-Q/R/S
Taiwan Semiconductor
Small Signal PNP Bipolar Transistor
FEATURES
●
Epitaxial planar die construction
●
Surface Mount Device Type
●
Moisture sensitivity level 3
●
Excellent hFE linearity
KEY PERFORMANCE PARAMETERS
PARAMETERS
VALUE
UNIT
VCEO
-50
V
IC
-150
mA
APPLICATIONS
●
General purpose small signal amplifier
●
Fast switching circuit
●
LED driver circuit
MECHANICAL DATA
●
●
●
SOT-723
C
C
E
Case: SOT-723
Terminal: Matte tin plated, lead free, solderable
per MIL-STD-202, Method 208 guaranteed
High temperature soldering guaranteed:
B
B
B : Base
E
C : Collector
E : Emitter
260°C/10s
●
Weight: 1.27mg ± 20%
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C unless otherwise noted)
PARAMETERS
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-60
V
Collector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO
-6
V
Collector Current-Continuous
IC
-150
mA
Collector Dissipation
PC
150
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
-55 to +150
°C
Version: B1602
2SA2029-Q/R/S
Taiwan Semiconductor
Small Signal PNP Bipolar Transistor
ELECTRICAL SPECIFICATIONS (Ta = 25°C unless otherwise noted)
PARAMETERS
SYMBOL
MIN
TYP.
MAX
UNIT
Collector-Base Breakdown Voltage
IC=-50μA, IE=0
V(BR)CBO
-60
V
Collector-Emitter Breakdown Voltage
IC=-1mA, IB=0
V(BR)CEO
-50
V
Emitter-Base Breakdown Voltage
IE=-50μA, IC=0
V(BR)EBO
-6
V
Collector Cut-Off Currect
VCB=-60V, IE=0
ICBO
-0.1
μA
Emitter Cut-Off Currect
VEB=-6V, IC=0
IEBO
-0.1
μA
DC Current Transfer Ration
VCB=-6V, IC=1mA
hFE
Collector-Emitter Saturation Voltage
IC=-50mA , IB=-5mA
Transition Frequency
VCE=-12V, IC=2mA, f=30MHz
fT
Output Capacitance
VCB=-12V, IE=0mA, f=1MHz
Cob
120
560
-0.5
VCE(sat)
140
V
MHz
5
pF
REMAKRS
hFE values are classified as follows
Rank
Q
R
S
Range
120~270
180~390
270~560
Version: B1602
2SA2029-Q/R/S
Taiwan Semiconductor
Small Signal PNP Bipolar Transistor
RATINGS AND CHARACTERISTICS CURVES (Ta = 25°C unless otherwise noted)
FIG.2 HFE --IC
FIG.1 Static Characteristic
1000
30uA
TA=100℃
27uA
24uA
16uA
21uA
18uA
15uA
12uA
6
4
9uA
6uA
2
IE=3uA
0
0
2
4
6
8
10
DC CURRENT GAIN, hFE
Ic(mA), COLLECTOR CURRENT
8
TA=25℃
100
COMMON EMMITTER VCE=6V
10
0. 1
1.0
10.0
100.0
1000.0
VCE(V), COLLECTOR EMITTER VOLTAGE
FIG.4 VCE(sat) - IC
(sat) - IC
FIG. 4 VCE(sat) - IC
1000
10000
BASE-EMITTER SATUTATION
VOLTAGE, VBE(sat) (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE, VCE(sat),
FIG.3 VBE
TA=25℃
1000
TA=100℃
100
0.1
1
TA= 100℃
100
10
100
TA=25℃
10
0.1
1
10
100
1000
FIG.6 fT - IC
FIG.5 IC - VBE
FIG. 5 IC - VBE
1000
FIG. 6 f T - IC
1000
100
TA=100℃
10
100
TA=25℃
COMMON
EMMITTER
VCE=12V
TA=25℃
1
COMMON EMMITTER
VCE=6V
0.1
0
0.3
0.6
0.9
VBE(V), BASE EMITTER VOLTAGE
1.2
10
1
10
Ic(mA), COLLECTOR CURRENT
100
Version: B1602
2SA2029-Q/R/S
Taiwan Semiconductor
Small Signal PNP Bipolar Transistor
ORDERING INFORMATION
Ordering Information
PART No.
PACKAGE
PACKING
PACKING CODE
GREEN CODE
SUFFIX
2SA2029-Q
2SA2029-R
MARKING
FQ
SOT-723
8K / 7" Reel
RD
G
FR
2SA2029-S
FS
PACKAGE OUTLINE DIMENSION
DIM.
Unit (mm)
Unit (inch)
Min
Max
Min
Max
A
1.15
1.25
0.05
0.05
B
0.75
0.85
0.03
0.03
C
0.15
0.27
0.01
0.01
D
0.8 TYP.
0.031 TYP.
E
1.15
1.25
0.05
0.05
F
0.43
0.55
0.02
0.02
G
0.15
0.25
0.01
0.01
H
0.25
0.37
0.01
0.01
MARKING DIAGRAM
Version: B1602
2SA2029-Q/R/S
Taiwan Semiconductor
Small Signal PNP Bipolar Transistor
Notice
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Version: B1602