CHENMKO ENTERPRISE CO.,LTD 2SC2412WPT SURFACE MOUNT General Purpose Transistor VOLTAGE 50 Volts CURRENT 0.15 Ampere APPLICATION * Small Signal Amplifier . FEATURE * Surface mount package. (SC-70/SOT-323) SC-70/SOT-323 * Low saturation voltage V CE(sat)=-0.4V(max.)(I C=50mA) * Low cob. Cob=2.0pF(Typ.) (2) * PC= 150mW (mounted on ceramic substrate). * High saturation current capability. (3) * NPN Silicon Transistor * Epitaxial planner type (1) 1.3±0.1 CONSTRUCTION 0.65 2.0±0.2 0.65 0.3±0.1 1.25±0.1 MARKING * HFE(Q):RE * HFE(R):RF * HFE(S):RG 0.8~1.1 0.05~0.2 0~0.1 0.1Min. C (3) CIRCUIT 2.0~2.45 (1) B E (2) SC-70/SOT-323 Dimensions in millimeters MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) SYMBOL MIN. MAX. UNITS Collector - Base Voltage RATINGS Open Emitter CONDITION VCBO - 60 Volts Collector - Emitter Voltage Open Base VCEO - 50 Volts Emitter - Base Voltage Open Collector VEBO - 7 Volts IC - 150 mAmps Peak Collector Current ICM - 150 mAmps Peak Base Current IBM - 15 mAmps PTOT - 250 mW TSTG -55 +150 o C C C Collector Current DC Total Power Dissipation TA ≤ 25OC; Note 1 Storage Temperature Junction Temperature Operating Ambient Temperature TJ - +150 o TAMB -55 +150 o Note 1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t. 2. Measured at Pulse Width 300 us, Duty Cycle 2%. 2004-7 RATING CHARACTERISTICS ( 2SC2412WPT ) ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) SYMBOL MIN. TYPE MAX. UNITS Collector Cut-off Current PARAMETERS IE=0; VCB=60V CONDITION ICBO - - 0.1 uA Emitter Cut-off Current IC=0; VEB=7V ICEO - - 0.1 uA DC Current Gain VCE=6V; Note 1 IC=1mA; Note 2 hFE 120 - 560 Collector-Emitter Saturation Voltage IC=50mA; IB=5mA VCEsat - - 0.4 Volts Base-Emitter Saturatio Voltage IC=50mA; IB=5mA VBEsat - - 1.1 mVolts Output Collector Capacitance IE=ie=0; VCB=12V; f=1MHz Cob - 2 3.5 pF Transition Frequency IC=2mA; VCE=12V; f=100MHz fT - 180 - MHz Note : 1. Pulse test: tp ≤ 300uSec; δ ≤ 0.02. 2. hFE: Classification Q: 120 to 270, R: 180 to 390, S: 270 to 560 RATING CHARACTERISTIC CURVES ( 2SC2412WPT ) 10 25 ΟC 55 OC 5 0.5 0.2 0.1 0 Grounded emitter output characteristics (1) Ta=25OC 0.50mA 80 mA 0.45 A 0.40m A m 35 0. 0.30mA 0.25mA 60 0.20mA 0.15mA 40 0.10mA 20 0.05mA IB=0A 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 BASE TO EMITTER VOLTAGE : VBE (V) Fig.3 0 0.4 0.8 1.2 1.6 2.0 COLLECTOR TO EMITTER VOLTAGE : VCE (V) 10 COLLECTOR CURRENT : IC (mA) 20 1 100 VCE=6V Ta=100 OC COLLECTOR CURRENT : IC (mA) 50 2 Fig.2 Grounded emitter propagation characteristics COLLECTOR CURRENT : IC (mA) Fig.1 Grounded emitter output characteristics (2) 30uA Ta=25OC 27uA 8 24uA 21uA 6 18uA 15uA 12uA 4 9uA 6uA 2 3uA 0 0 4 8 IB=0A 12 16 20 COLLECTOR TO EMITTER VOLTAGE : VCE (V) RATING CHARACTERISTIC CURVES ( 2SC2412WPT ) Fig.4 DC current gain vs. collector current (1) Ta=100OC VCE=5V 3V 1V 100 50 20 10 0.2 0.5 1 2 5 10 20 -55OC 100 50 20 COLLECTOR CURRENT : IC (mA) Ta=100OC 25OC -55OC 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 Ta=25OC f=1MHz IE=0A IC=0A Cib 5 2 Co b 1 0.2 0.5 1 2 5 10 20 50 100 200 0.2 0.05 0.02 0.01 0.2 IC/IB=50 Ta=100OC 25OC -55OC 0.05 0.02 0.01 0.5 1 2 5 10 20 50 100 50 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) 100 50 20 10 0.2 0.5 1 2 5 EMITTER CURRENT : IE (mA) 2 5 10 20 50 100 200 Ta=25OC VCE=6V 500 200 100 50 0.5 1 2 5 10 20 50 EMITTER CURRENT : IE (mA) Ta=25OC f=32MHZ VCB=6V 200 0.5 1 Fig.9 Gain bandwidth product vs. emitter current 0.1 0.2 IC/IB=50 20 10 0.1 COLLECTOR CURRENT : IC (mA) Fig.11 Base-collector time constant vs. emitter current BASE COLLECTOR TIME CONSTANT : Cc·rbb' (ps) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 10 10 20 COLLECTOR CURRENT : IC (mA) Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 20 5 0.5 COLLECTOR CURRENT : IC (mA) Fig.10 2 Ta=25OC 0.2 Fig.8 Collector-emitter saturation voltage vs. collector current (2) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) IC/IB=10 0.2 0.1 0.5 1 0.5 COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current (1) 0.5 25OC 200 10 0.2 50 100 200 VCE=5V TRANSITION FREQUENCY : fT (MHz) 200 Fig. 6 Collector-emitter saturation voltage vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 500 Ta=25OC DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE 500 Fig.5 DC current gain vs. collector current (2) 10 100