CHENMKO 2SC2412KPT

CHENMKO ENTERPRISE CO.,LTD
2SC2412KPT
SURFACE MOUNT
General Purpose Transistor
VOLTAGE 50 Volts
CURRENT 0.15 Ampere
APPLICATION
* Small Signal Amplifier .
FEATURE
* Surface mount package. (SOT-23)
* Low saturation voltage V
* Low cob. Cob=2.0pF(Typ.)
CONSTRUCTION
.019 (0.50)
* PC= 200mW (mounted on ceramic substrate).
* High saturation current capability.
.066 (1.70)
* NPN Silicon Transistor
* Epitaxial planner type
.110 (2.80)
.082 (2.10)
.119 (3.04)
(1)
.018 (0.30)
.041 (1.05)
.033 (0.85)
SOT-23
(3)
(2)
MARKING
.045 (1.15)
.033 (0.85)
CIRCUIT
(1) B
.002 (0.05)
C (3)
.103 (2.64)
.086 (2.20)
.028 (0.70)
.020 (0.50)
.007 (0.177)
.055 (1.40)
.047 (1.20)
* HFE(Q):ND
* HFE(R):C4G* HFE(S):GT
SOT-23
Dimensions in inches and (millimeters)
E (2)
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )
SYMBOL
MIN.
MAX.
UNITS
Collector - Base Voltage
RATINGS
Open Emitter
CONDITION
VCBO
-
60
Volts
Collector - Emitter Voltage
Open Base
VCEO
-
50
Volts
Emitter - Base Voltage
Open Collector
VEBO
-
7
Volts
IC
-
150
mAmps
Peak Collector Current
ICM
-
150
mAmps
Peak Base Current
IBM
-
15
mAmps
PTOT
-
350
mW
TSTG
-55
+150
o
C
C
C
Collector Current DC
Total Power Dissipation
TA ≤ 25OC; Note 1
Storage Temperature
Junction Temperature
Operating Ambient Temperature
TJ
-
+150
o
TAMB
-55
+150
o
Note
1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t.
2. Measured at Pulse Width 300 us, Duty Cycle 2%.
2002-10
RATING CHARACTERISTICS ( 2SC2412KPT )
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
SYMBOL
MIN.
TYPE
MAX.
UNITS
Collector Cut-off Current
PARAMETERS
IE=0; VCB=60V
CONDITION
ICBO
-
-
0.1
uA
Emitter Cut-off Current
IC=0; VEB=7V
ICEO
-
-
0.1
uA
DC Current Gain
VCE=6V; Note 1
IC=1mA; Note 2
hFE
120
-
560
Collector-Emitter Saturation Voltage
IC=50mA; IB=5mA
VCEsat
-
-
0.4
Volts
Base-Emitter Saturatio Voltage
IC=50mA; IB=5mA
VBEsat
-
-
1.1
mVolts
Output Collector Capacitance
IE=ie=0; VCB=12V;
f=1MHz
Cob
-
2
3.5
pF
Transition Frequency
IC=2mA; VCE=12V;
f=100MHz
fT
-
180
-
MHz
Note :
1. Pulse test: tp ≤ 300uSec; δ ≤ 0.02.
2. hFE: Classification Q: 120 to 270, R: 180 to 390, S: 270 to 560
RATING CHARACTERISTIC CURVES ( 2SC2412KPT )
10
25 ΟC
55 OC
5
0.5
0.2
0.1
0
Grounded emitter output
characteristics (1)
Ta=25OC
0.50mA
80
mA
0.45 A
0.40m
A
m
35
0.
0.30mA
0.25mA
60
0.20mA
0.15mA
40
0.10mA
20
0.05mA
IB=0A
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.3
0
0.4
0.8
1.2
1.6
2.0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
10
COLLECTOR CURRENT : IC (mA)
20
1
100
VCE=6V
Ta=100 OC
COLLECTOR CURRENT : IC (mA)
50
2
Fig.2
Grounded emitter propagation
characteristics
COLLECTOR CURRENT : IC (mA)
Fig.1
Grounded emitter output
characteristics (2)
30uA
Ta=25OC
27uA
8
24uA
21uA
6
18uA
15uA
12uA
4
9uA
6uA
2
3uA
0
0
4
8
IB=0A
12
16
20
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
RATING CHARACTERISTIC CURVES ( 2SC2412KPT )
Fig.4 DC current gain vs.
collector current (1)
Ta=100OC
VCE=5V
3V
1V
100
50
20
10
0.2
0.5 1
2
5
10 20
-55OC
100
50
20
COLLECTOR CURRENT : IC (mA)
Ta=100OC
25OC
-55OC
0.05
0.02
0.01
0.2
0.5 1
2
5
10
20
50 100 200
Ta=25OC
f=1MHz
IE=0A
IC=0A
Cib
5
2
Co
b
1
0.2
0.5
1
2
5
10
20
50 100 200
0.2
0.05
0.02
0.01
0.2
IC/IB=50
Ta=100OC
25OC
-55OC
0.05
0.02
0.01
0.5 1
2
5
10
20
50 100
50
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE
: VEB (V)
100
50
20
10
0.2
0.5
1
2
5
EMITTER CURRENT : IE (mA)
2
5
10
20
50 100 200
Ta=25OC
VCE=6V
500
200
100
50
0.5
1
2
5
10
20
50
EMITTER CURRENT : IE (mA)
Ta=25OC
f=32MHZ
VCB=6V
200
0.5 1
Fig.9 Gain bandwidth product vs.
emitter current
0.1
0.2
IC/IB=50
20
10
0.1
COLLECTOR CURRENT : IC (mA)
Fig.11 Base-collector time constant
vs. emitter current
BASE COLLECTOR TIME CONSTANT : Cc·rbb' (ps)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE : Cib (pF)
10
10 20
COLLECTOR CURRENT : IC (mA)
Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
20
5
0.5
COLLECTOR CURRENT : IC (mA)
Fig.10
2
Ta=25OC
0.2
Fig.8 Collector-emitter saturation
voltage vs. collector current (2)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
IC/IB=10
0.2
0.1
0.5 1
0.5
COLLECTOR CURRENT : IC (mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current (1)
0.5
25OC
200
10
0.2
50 100 200
VCE=5V
TRANSITION FREQUENCY : fT (MHz)
200
Fig. 6 Collector-emitter saturation
voltage vs. collector current
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
500
Ta=25OC
DC CURRENT GAIN : hFE
DC CURRENT GAIN : hFE
500
Fig.5 DC current gain vs.
collector current (2)
10
100