VS-UFB130FA40 www.vishay.com Vishay Semiconductors Insulated Ultrafast Rectifier Module, 130 A FEATURES • Two fully independent diodes • Fully insulated package • Ultrafast, soft reverse recovery, with high operation junction temperature (TJ max. = 175 °C) • Low forward voltage drop • Optimized for power conversion: welding and industrial SMPS applications • Easy to use and parallel • Industry standard outline SOT-227 • UL approved file E78996 • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION / APPLICATIONS PRODUCT SUMMARY VR 400 V IF(AV) per module at TC = 114 °C 130 A trr 40 ns Type Modules - Diode FRED Pt® Package SOT-227 The VS-UFB130FA40 insulated modules integrate two state of the art ultrafast recovery rectifiers in the compact, industry standard SOT-227 package. The diodes structure, and its life time control, provide an ultrasoft recovery current shape, together with the best overall performance, ruggedness and reliability characteristics. These devices are thus intended for high frequency applications in which the switching energy is designed not to be predominant portion of the total energy, such as in the output rectification stage of welding machines, SMPS, DC/DC converters. Their extremely optimized stored charge and low recovery current reduce both over dissipation in the switching elements (and snubbers) and EMI/RFI. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS 400 V Cathode to anode voltage VR Continuous forward current per diode IF TC = 123 °C 65 Single pulse forward current per diode IFSM TC = 25 °C 800 PD TC = 123 °C 144 Maximum power dissipation per module RMS isolation voltage Operating junction and storage temperatures VISOL TJ, TStg Any terminal to case, t = 1 minute A W 2500 V -55 to +175 °C Revision: 31-May-16 Document Number: 93602 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB130FA40 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Cathode to anode breakdown voltage TEST CONDITIONS VBR Forward voltage IR = 100 μA VFM Reverse leakage current IRM Junction capacitance CT MIN. TYP. MAX. UNITS 400 - - IF = 60 A - 1.16 1.37 IF = 60 A, TJ = 175 °C - 0.93 1.09 VR = VR rated - - 50 μA V TJ = 175 °C, VR = VR rated - - 1 mA VR = 400 V - 67 - pF UNITS DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr Peak recovery current MIN. TYP. MAX. - 40 - TJ = 25 °C - 86 - TJ = 125 °C - 155 - IF = 50 A TJ = 25 °C IRRM Reverse recovery charge TEST CONDITIONS IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V dIF/dt = 200 A/μs TJ = 125 °C Qrr VR = 200 V - 8.4 - - 18.4 - TJ = 25 °C - 350 - TJ = 125 °C - 1400 - MIN. TYP. MAX. - - 0.72 ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Junction to case, single leg conducting Junction to case, both leg conducting Case to heatsink TEST CONDITIONS RthJC RthCS - - 0.36 Flat, greased surface - 0.10 - - 30 - g Torque to terminal - - 1.1 (9.7) Nm (lbf.in) Torque to heatsink - - 1.3 (11.5) Nm (lbf.in) Weight Mounting torque Case style °C/W SOT-227 1000 1000 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) UNITS 100 TJ = 175 °C TJ = 25 °C 10 100 TJ = 175 °C 10 1 0.1 0.01 TJ = 25 °C 0.001 1 0 0.5 1 1.5 2 2.5 0 50 100 150 200 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 31-May-16 Document Number: 93602 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB130FA40 www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 10 1 10 100 1000 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 1 PDM DC 0.1 t1 Single pulse (thermal resistance) t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.0001 0.001 0.01 0.1 1 10 175 150 150 125 Average Power Loss (W) Allowable Case Temperature (°C) t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) 125 DC 100 75 Square wave (D = 0.50) Rated VR applied 50 25 100 RMS limit 75 50 25 DC 0 D = 0.05 D = 0.10 D = 0.20 D = 0.33 D = 0.50 0 0 20 40 60 80 100 120 140 160 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) 0 10 20 30 40 50 60 70 80 90 100 110 120 IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics (Per Leg) Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR (1) Revision: 31-May-16 Document Number: 93602 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB130FA40 www.vishay.com Vishay Semiconductors 160 150 140 3050 VRR = 200 V IF = 50 A VRR = 200 V IF = 50 A 2550 130 TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C 2050 Qrr (nC) trr (ns) 120 110 100 1550 90 1050 80 70 550 60 50 100 50 100 1000 1000 dIF/dt (A/μs) dIF/dt (A/μs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Revision: 31-May-16 Document Number: 93602 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB130FA40 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- UF B 130 F A 40 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Ultrafast rectifier 3 - Ultrafast Pt diffused 4 - Current rating (130 = 130 A) 5 - Circuit configuration (2 separate diodes, parallel pin-out) 6 - Package indicator (SOT-227 standard insulated base) 7 - Voltage rating (40 = 400 V) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING Lead Assignment 2 separate diodes, parallel pin-out 4 3 1 2 4 3 1 2 F LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95423 Packaging information www.vishay.com/doc?95425 Revision: 31-May-16 Document Number: 93602 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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