VISHAY 60EPU06PBF_12

VS-60EPU06PbF, VS-60EPU06-N3, VS-60APU06PbF, VS-60APU06-N3
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Vishay Semiconductors
Ultrafast Soft Recovery Diode, 60 A FRED Pt®
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
TO-247AC modified
TO-247AC
Cathode
to base
2
Cathode
to base
2
• Compliant to RoHS Directive 2002/95/EC
• Designed
and
JEDEC-JESD47
qualified
according
to
• Halogen-free according to IEC 61249-2-21
definition (-N3 only)
BENEFITS
1
Cathode
VS-60EPU06PbF
VS-60EPU06-N3
• Reduced RFI and EMI
3
Anode
1
Anode
3
Anode
• Higher frequency operation
VS-60APU06PbF
VS-60APU06-N3
• Reduced snubbing
• Reduced parts count
DESCRIPTION/APPLICATIONS
PRODUCT SUMMARY
Package
TO-247AC,
TO-247AC modified (2 pins)
IF(AV)
60 A
VR
600 V
VF at IF
1.68 V
trr typ.
See Recovery table
TJ max.
175 °C
Diode variation
Single die
These diodes are optimized to reduce losses and EMI/RFI in
high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Cathode to anode voltage
TEST CONDITIONS
VR
Continuous forward current
MAX.
UNITS
600
V
IF(AV)
TC = 116 °C
Single pulse forward current
IFSM
TC = 25 °C
600
Maximum repetitive forward current
IFRM
Square wave, 20 kHz
120
Operating junction and storage temperatures
60
TJ, TStg
A
- 55 to 175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
VBR,
VR
VF
Reverse leakage current
IR
Junction capacitance
CT
Revision: 15-Aug-11
TEST CONDITIONS
MIN.
TYP.
MAX.
600
-
-
IF = 60 A
-
1.35
1.68
IF = 60 A, TJ = 125 °C
-
1.20
1.42
IF = 60 A, TJ = 175 °C
-
1.11
1.30
IR = 100 μA
VR = VR rated
-
-
50
TJ = 150 °C, VR = VR rated
-
-
500
VR = 600 V
-
39
-
UNITS
V
μA
pF
Document Number: 94023
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60EPU06PbF, VS-60EPU06-N3, VS-60APU06PbF, VS-60APU06-N3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1 A, dIF/dt = 200 A/μs, VR = 30 V
Reverse recovery time
Peak recovery current
Reverse recovery charge
trr
IRRM
Qrr
MIN.
TYP.
MAX.
-
34
45
UNITS
TJ = 25 °C
-
81
-
TJ = 125 °C
-
164
-
-
7.4
-
-
17.0
-
TJ = 25 °C
-
300
-
TJ = 125 °C
-
1394
-
MIN.
TYP.
MAX.
-
-
0.63
-
0.2
-
-
5.5
-
-
0.2
-
oz.
-
2.4
(20)
Nm
(lbf  in)
TJ = 25 °C
TJ = 125 °C
IF = 60 A
dIF/dt = 200 A/μs
VR = 200 V
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Thermal resistance,
junction to case
RthJC
Thermal resistance,
case to heatsink
RthCS
TEST CONDITIONS
Mounting surface, flat, smooth
and greased
Weight
Marking device
Revision: 15-Aug-11
K/W
1.2
(10)
Mounting torque
UNITS
Case style TO-247AC modified
60EPU06
Case style TO-247AC
60APU06
g
Document Number: 94023
2
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60EPU06PbF, VS-60EPU06-N3, VS-60APU06PbF, VS-60APU06-N3
www.vishay.com
Vishay Semiconductors
1000
IR - Reverse Current (µA)
IF - Instantaneous
Forward Current (A)
1000
100
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
10
1
100
TJ = 175 °C
10
TJ = 125 °C
1
0.1
TJ = 25 °C
0.01
0.001
0.5
0
1.0
1.5
2.0
100
0
3.0
2.5
200
300
400
500
600
VR - Reverse Voltage (V)
VF - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
CT - Junction Capacitance (pF)
1000
TJ = 25 °C
100
10
0
100
200
300
400
500
600
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
0.7
0.5
0.3
Ri (°C/W)
0.06226
0.32503
0.24271
0.1
0.1
R1
TJ
0.05
R2
τ1
τ2
R3
τ3
TC
Notes:
1. Duty factor D = ton/period
2. Peak TJ = PDM x ZthJC + TC
Ci = τi/Ri
0.01
0.00001
0.0001
0.001
0.01
0.1
τi (s)
0.00049
0.01294
0.24310
1
10
100
ton - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 15-Aug-11
Document Number: 94023
3
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60EPU06PbF, VS-60EPU06-N3, VS-60APU06PbF, VS-60APU06-N3
www.vishay.com
Vishay Semiconductors
300
160
IF = 30 A
IF = 60 A
140
120
Square wave (D = 0.50)
80 % rated VR applied
100
200
150
100
80
See note (1)
50
60
0
20
40
60
80
10
100
100
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
140
3000
120
2500
100
RMS limit
80
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
60
40
DC
20
TJ = 125 °C
TJ = 25 °C
2000
Qrr (nC)
Average Power Loss (W)
TJ = 125 °C
TJ = 25 °C
250
DC
trr (ns)
Allowable Case Temperature (°C)
180
IF = 30 A
IF = 60 A
1500
1000
500
0
0
20
0
40
60
80
100
10
100
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 6 - Forward Power Loss Characteristics
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
(1)
Revision: 15-Aug-11
Document Number: 94023
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60EPU06PbF, VS-60EPU06-N3, VS-60APU06PbF, VS-60APU06-N3
www.vishay.com
Vishay Semiconductors
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
D
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 15-Aug-11
Document Number: 94023
5
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60EPU06PbF, VS-60EPU06-N3, VS-60APU06PbF, VS-60APU06-N3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
60
E
P
U
06
PbF
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating (60 = 60 A)
3
-
Circuit configuration:
E = Single diode
A = Single diode, 3 pins
-
4
Package:
P = TO-247AC (modified)
-
5
Type of silicon:
U = Ultrafast recovery
6
-
Voltage rating (06 = 600 V)
7
-
Environmental digit:
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
VS-60EPU06PbF
25
500
PACKAGING DESCRIPTION
Antistatic plastic tube
VS-60EPU06-N3
25
500
Antistatic plastic tube
VS-60APU06PbF
25
500
Antistatic plastic tube
VS-60APU06-N3
25
500
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Revision: 15-Aug-11
TO-247AC modified
www.vishay.com/doc?95253
TO-247AC
www.vishay.com/doc?95223
TO-247AC modified PbF
www.vishay.com/doc?95255
TO-247AC modified -N3
www.vishay.com/doc?95442
TO-247ACPbF
www.vishay.com/doc?95226
TO-247AC-N3
www.vishay.com/doc?95007
Document Number: 94023
6
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
DIMENSIONS in millimeters and inches
A
A
(3)
(6) Ø P
E
B
(2) R/2
N
A2
S
(Datum B)
Ø K M DBM
FP1
A
D2
Q
2xR
(2)
D1 (4)
D
1
4
D
3
2
Thermal pad
(5) L1
C
L
A
See view B
2 x b2
3xb
0.10 M C A M
Planting
(4)
E1
0.01 M D B M
View A - A
C
2x e
A1
b4
(b1, b3, b5)
Lead assignments
Base metal
D DE
(c)
c1
E
C
C
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
(b, b2, b4)
(4)
Section C - C, D - D, E - E
SYMBOL
A
A1
A2
b
b1
b2
b3
b4
b5
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.65
5.31
2.21
2.59
1.50
2.49
0.99
1.40
0.99
1.35
1.65
2.39
1.65
2.37
2.59
3.43
2.59
3.38
0.38
0.86
0.38
0.76
19.71
20.70
13.08
-
INCHES
MIN.
MAX.
0.183
0.209
0.087
0.102
0.059
0.098
0.039
0.055
0.039
0.053
0.065
0.094
0.065
0.094
0.102
0.135
0.102
0.133
0.015
0.034
0.015
0.030
0.776
0.815
0.515
-
View B
NOTES
SYMBOL
3
4
D2
E
E1
e
FK
L
L1
N
P
P1
Q
R
S
MILLIMETERS
MIN.
MAX.
0.51
1.30
15.29
15.87
13.72
5.46 BSC
2.54
14.20
16.10
3.71
4.29
7.62 BSC
3.56
3.66
6.98
5.31
5.69
4.52
5.49
5.51 BSC
INCHES
MIN.
MAX.
0.020
0.051
0.602
0.625
0.540
0.215 BSC
0.010
0.559
0.634
0.146
0.169
0.3
0.14
0.144
0.275
0.209
0.224
1.78
0.216
0.217 BSC
NOTES
3
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC outline TO-247 with exception of dimension c
Revision: 16-Jun-11
Document Number: 95223
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
DIMENSIONS in millimeters and inches
A
A
(3)
(6) ΦP
E
B
(2) R/2
N
A2
S
(Datum B)
Ø K M DBM
ΦP1
A
D2
Q
2xR
(2)
D1 (4)
D
1
4
D
3
2
Thermal pad
(5) L1
C
L
A
See view B
2 x b2
3xb
Planting
View A - A
C
2x e
A1
b4
0.10 M C A M
(4)
E1
(b1, b3, b5)
Lead assignments
Base metal
D DE
(c)
c1
E
C
C
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
(b, b2, b4)
(4)
Section C - C, D - D, E - E
SYMBOL
A
A1
A2
b
b1
b2
b3
b4
b5
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.65
5.31
2.21
2.59
1.50
2.49
0.99
1.40
0.99
1.35
1.65
2.39
1.65
2.37
2.59
3.43
2.59
3.38
0.38
0.86
0.38
0.76
19.71
20.70
13.08
-
INCHES
MIN.
MAX.
0.183
0.209
0.087
0.102
0.059
0.098
0.039
0.055
0.039
0.053
0.065
0.094
0.065
0.094
0.102
0.135
0.102
0.133
0.015
0.034
0.015
0.030
0.776
0.815
0.515
-
View B
NOTES
SYMBOL
3
4
D2
E
E1
e
K
L
L1
N
P
P1
Q
R
S
MILLIMETERS
MIN.
MAX.
0.51
1.30
15.29
15.87
13.72
5.46 BSC
2.54
14.20
16.10
3.71
4.29
7.62 BSC
3.56
3.66
6.98
5.31
5.69
4.52
5.49
5.51 BSC
INCHES
MIN.
MAX.
0.020
0.051
0.602
0.625
0.540
0.215 BSC
0.010
0.559
0.634
0.146
0.169
0.3
0.14
0.144
0.275
0.209
0.224
1.78
0.216
0.217 BSC
NOTES
3
Notes
(1) Dimensioning and tolerance per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC outline TO-247 with exception of dimension c
Revision: 21-Jun-11
Document Number: 95253
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
1
Document Number: 91000