VS-60EPU06PbF, VS-60EPU06-N3, VS-60APU06PbF, VS-60APU06-N3 www.vishay.com Vishay Semiconductors Ultrafast Soft Recovery Diode, 60 A FRED Pt® FEATURES • Ultrafast recovery time • Low forward voltage drop • 175 °C operating junction temperature TO-247AC modified TO-247AC Cathode to base 2 Cathode to base 2 • Compliant to RoHS Directive 2002/95/EC • Designed and JEDEC-JESD47 qualified according to • Halogen-free according to IEC 61249-2-21 definition (-N3 only) BENEFITS 1 Cathode VS-60EPU06PbF VS-60EPU06-N3 • Reduced RFI and EMI 3 Anode 1 Anode 3 Anode • Higher frequency operation VS-60APU06PbF VS-60APU06-N3 • Reduced snubbing • Reduced parts count DESCRIPTION/APPLICATIONS PRODUCT SUMMARY Package TO-247AC, TO-247AC modified (2 pins) IF(AV) 60 A VR 600 V VF at IF 1.68 V trr typ. See Recovery table TJ max. 175 °C Diode variation Single die These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage TEST CONDITIONS VR Continuous forward current MAX. UNITS 600 V IF(AV) TC = 116 °C Single pulse forward current IFSM TC = 25 °C 600 Maximum repetitive forward current IFRM Square wave, 20 kHz 120 Operating junction and storage temperatures 60 TJ, TStg A - 55 to 175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF Reverse leakage current IR Junction capacitance CT Revision: 15-Aug-11 TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 60 A - 1.35 1.68 IF = 60 A, TJ = 125 °C - 1.20 1.42 IF = 60 A, TJ = 175 °C - 1.11 1.30 IR = 100 μA VR = VR rated - - 50 TJ = 150 °C, VR = VR rated - - 500 VR = 600 V - 39 - UNITS V μA pF Document Number: 94023 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60EPU06PbF, VS-60EPU06-N3, VS-60APU06PbF, VS-60APU06-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS IF = 1 A, dIF/dt = 200 A/μs, VR = 30 V Reverse recovery time Peak recovery current Reverse recovery charge trr IRRM Qrr MIN. TYP. MAX. - 34 45 UNITS TJ = 25 °C - 81 - TJ = 125 °C - 164 - - 7.4 - - 17.0 - TJ = 25 °C - 300 - TJ = 125 °C - 1394 - MIN. TYP. MAX. - - 0.63 - 0.2 - - 5.5 - - 0.2 - oz. - 2.4 (20) Nm (lbf in) TJ = 25 °C TJ = 125 °C IF = 60 A dIF/dt = 200 A/μs VR = 200 V ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Thermal resistance, junction to case RthJC Thermal resistance, case to heatsink RthCS TEST CONDITIONS Mounting surface, flat, smooth and greased Weight Marking device Revision: 15-Aug-11 K/W 1.2 (10) Mounting torque UNITS Case style TO-247AC modified 60EPU06 Case style TO-247AC 60APU06 g Document Number: 94023 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60EPU06PbF, VS-60EPU06-N3, VS-60APU06PbF, VS-60APU06-N3 www.vishay.com Vishay Semiconductors 1000 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) 1000 100 TJ = 175 °C TJ = 125 °C TJ = 25 °C 10 1 100 TJ = 175 °C 10 TJ = 125 °C 1 0.1 TJ = 25 °C 0.01 0.001 0.5 0 1.0 1.5 2.0 100 0 3.0 2.5 200 300 400 500 600 VR - Reverse Voltage (V) VF - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 10 0 100 200 300 400 500 600 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 1 0.7 0.5 0.3 Ri (°C/W) 0.06226 0.32503 0.24271 0.1 0.1 R1 TJ 0.05 R2 τ1 τ2 R3 τ3 TC Notes: 1. Duty factor D = ton/period 2. Peak TJ = PDM x ZthJC + TC Ci = τi/Ri 0.01 0.00001 0.0001 0.001 0.01 0.1 τi (s) 0.00049 0.01294 0.24310 1 10 100 ton - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 15-Aug-11 Document Number: 94023 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60EPU06PbF, VS-60EPU06-N3, VS-60APU06PbF, VS-60APU06-N3 www.vishay.com Vishay Semiconductors 300 160 IF = 30 A IF = 60 A 140 120 Square wave (D = 0.50) 80 % rated VR applied 100 200 150 100 80 See note (1) 50 60 0 20 40 60 80 10 100 100 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 140 3000 120 2500 100 RMS limit 80 D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 60 40 DC 20 TJ = 125 °C TJ = 25 °C 2000 Qrr (nC) Average Power Loss (W) TJ = 125 °C TJ = 25 °C 250 DC trr (ns) Allowable Case Temperature (°C) 180 IF = 30 A IF = 60 A 1500 1000 500 0 0 20 0 40 60 80 100 10 100 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 6 - Forward Power Loss Characteristics Fig. 8 - Typical Stored Charge vs. dIF/dt Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR (1) Revision: 15-Aug-11 Document Number: 94023 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60EPU06PbF, VS-60EPU06-N3, VS-60APU06PbF, VS-60APU06-N3 www.vishay.com Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Revision: 15-Aug-11 Document Number: 94023 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60EPU06PbF, VS-60EPU06-N3, VS-60APU06PbF, VS-60APU06-N3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 60 E P U 06 PbF 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (60 = 60 A) 3 - Circuit configuration: E = Single diode A = Single diode, 3 pins - 4 Package: P = TO-247AC (modified) - 5 Type of silicon: U = Ultrafast recovery 6 - Voltage rating (06 = 600 V) 7 - Environmental digit: PbF = Lead (Pb)-free and RoHS compliant -N3 = Halogen-free, RoHS compliant and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY VS-60EPU06PbF 25 500 PACKAGING DESCRIPTION Antistatic plastic tube VS-60EPU06-N3 25 500 Antistatic plastic tube VS-60APU06PbF 25 500 Antistatic plastic tube VS-60APU06-N3 25 500 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions Part marking information Revision: 15-Aug-11 TO-247AC modified www.vishay.com/doc?95253 TO-247AC www.vishay.com/doc?95223 TO-247AC modified PbF www.vishay.com/doc?95255 TO-247AC modified -N3 www.vishay.com/doc?95442 TO-247ACPbF www.vishay.com/doc?95226 TO-247AC-N3 www.vishay.com/doc?95007 Document Number: 94023 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters and inches A A (3) (6) Ø P E B (2) R/2 N A2 S (Datum B) Ø K M DBM FP1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L A See view B 2 x b2 3xb 0.10 M C A M Planting (4) E1 0.01 M D B M View A - A C 2x e A1 b4 (b1, b3, b5) Lead assignments Base metal D DE (c) c1 E C C Diodes 1. - Anode/open 2. - Cathode 3. - Anode (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.37 2.59 3.43 2.59 3.38 0.38 0.86 0.38 0.76 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.094 0.102 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.815 0.515 - View B NOTES SYMBOL 3 4 D2 E E1 e FK L L1 N P P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 2.54 14.20 16.10 3.71 4.29 7.62 BSC 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.3 0.14 0.144 0.275 0.209 0.224 1.78 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c Revision: 16-Jun-11 Document Number: 95223 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters and inches A A (3) (6) ΦP E B (2) R/2 N A2 S (Datum B) Ø K M DBM ΦP1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L A See view B 2 x b2 3xb Planting View A - A C 2x e A1 b4 0.10 M C A M (4) E1 (b1, b3, b5) Lead assignments Base metal D DE (c) c1 E C C Diodes 1. - Anode/open 2. - Cathode 3. - Anode (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.37 2.59 3.43 2.59 3.38 0.38 0.86 0.38 0.76 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.094 0.102 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.815 0.515 - View B NOTES SYMBOL 3 4 D2 E E1 e K L L1 N P P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 2.54 14.20 16.10 3.71 4.29 7.62 BSC 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.3 0.14 0.144 0.275 0.209 0.224 1.78 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerance per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c Revision: 21-Jun-11 Document Number: 95253 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000