VS-UFB201FA40 www.vishay.com Vishay Semiconductors Insulated Ultrafast Rectifier Module, 200 A FEATURES • Two fully independent diodes • Fully insulated package • Ultrafast, soft reverse recovery, with high junction temperature (TJ max. = 175 °C) • Low forward voltage drop • Optimized for power conversion: welding and industrial SMPS applications • Easy to use and parallel • Industry standard outline SOT-227 • UL approved file E78996 • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION / APPLICATIONS PRODUCT SUMMARY VR 400 V IF(AV) per module at TC = 86 °C 200 A trr 40 ns Type Modules - Diode FRED Pt® Package SOT-227 The VS-UFB201FA40 insulated modules integrate two state of the art ultrafast recovery rectifiers in the compact, industry standard SOT-227 package. The diodes structure, and its life time control, provide an ultrasoft recovery current shape, together with the best overall performance, ruggedness and reliability characteristics. These devices are thus intended for high frequency applications in which the switching energy is designed not to be predominant portion of the total energy, such as in the output rectification stage of welding machines, SMPS, DC/DC converters. Their extremely optimized stored charge and low recovery current reduce both over dissipation in the switching elements (and snubbers) and EMI/RFI. ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage SYMBOL TEST CONDITIONS VR MAX. UNITS 400 V Continuous forward current per diode IF (1) TC = 88 °C 120 Single pulse forward current per diode IFSM TC = 25 °C 600 PD TC = 88 °C 311 W 2500 V Maximum power dissipation per module RMS isolation voltage Maximum junction temperature Maximum case temperature Storage temperature VISOL TJ Any terminal to case, t = 1 minute A -55 to +175 TC 150 TSTG -55 to +150 °C Note (1) Maximum continuous forward current must be limited to 100 A to do not exceed the maximum temperature of power terminals. Revision: 31-May-16 Document Number: 93793 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB201FA40 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage SYMBOL VBR TEST CONDITIONS IR = 100 μA IF = 100 A Forward voltage VFM Reverse leakage current IRM Junction capacitance CT MIN. TYP. MAX. 400 - - - 1.33 1.59 IF = 100 A, TJ = 125 °C - 1.19 1.28 IF = 200 A - 1.56 1.91 UNITS V IF = 200 A, TJ = 125 °C - 1.49 1.64 VR = VR rated - 0.20 50 μA TJ = 175 °C, VR = VR rated - 0.40 2 mA VR = 400 V - 76 - pF MAX. UNITS DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time SYMBOL trr TEST CONDITIONS Reverse recovery charge IRRM Qrr TYP. IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 40 - TJ = 25 °C - 80 - TJ = 125 °C Peak recovery current MIN. - 160 - - 7 - - 16 - TJ = 25 °C - 310 - TJ = 125 °C - 1300 - MIN. TYP. MAX. - - 0.56 TJ = 25 °C TJ = 125 °C IF = 50 A dIF/dt = 200 A/μs VR = 200 V ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Junction to case, single leg conducting Junction to case, both leg conducting Case to heatsink SYMBOL TEST CONDITIONS RthJC RthCS - - 0.28 Flat, greased surface - 0.075 - - 30 - g Torque to terminal - - 1.1 (9.7) Nm (lbf.in) Torque to heatsink - - 1.3 (11.5) Nm (lbf.in) Weight Mounting torque Case style UNITS °C/W SOT-227 Revision: 31-May-16 Document Number: 93793 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB201FA40 Vishay Semiconductors 1000 1000 TJ = 175 °C TJ = 175 °C 100 100 IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) www.vishay.com TJ = 125 °C TJ = 25 °C 10 TJ = 125 °C 10 1 0.1 0.01 TJ = 25 °C 0.001 1 0 0.5 1 1.5 2 0 2.5 50 100 150 200 250 300 350 400 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 10 000 1000 100 10 10 100 1000 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 1 PDM 0.1 DC t1 t2 Single pulse (thermal resistance) Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Revision: 31-May-16 Document Number: 93793 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB201FA40 Vishay Semiconductors 175 250 150 225 125 °C 175 100 DC 75 IF = 50 A 150 IF = 25 A 125 Square wave (D = 0.50) 80 % Rated VR applied 50 100 25 °C 25 see note 75 (1) 0 50 0 40 80 120 160 200 100 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/μs) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 400 3000 VR = 200 V 350 2500 IF = 25 A 300 RMS Limit 250 200 150 100 DC 50 IF = 50 A 2000 Qrr (nC) Average Power Loss (W) VR = 200 V 200 125 trr (ns) Allowable Case Temperature (°C) www.vishay.com D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 1500 125 °C 1000 25 °C 500 0 0 0 40 80 120 160 200 240 100 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/μs) Fig. 6 - Forward Power Loss Characteristics (Per Leg) Fig. 8 - Typical Stored Charge vs. dIF/dt 40 VR = 200 V IF = 25 A 30 trr (ns) IF = 50 A 20 125 °C 10 25 °C 0 100 1000 dIF/dt (A/μs) Fig. 9 - Typical Reverse Recovery vs. dIF/dt Note (1) Formula used: T = T - (Pd +Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR Revision: 31-May-16 Document Number: 93793 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB201FA40 www.vishay.com Vishay Semiconductors dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (4) Qrr - area under curve defined by trr and IRRM (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current Qrr = (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 11 - Reverse Recovery Waveform and Definitions Revision: 31-May-16 Document Number: 93793 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB201FA40 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- UF B 201 F A 40 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Ultrafast rectifier 3 - Ultrafast Pt diffused 4 - Current rating (201 = 200 A) 5 - Circuit configuration (2 separate diodes, parallel pin-out) 6 - Package indicator (SOT-227 standard insulated base) 7 - Voltage rating (40 = 400 V) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING Lead Assignment 2 separate diodes, parallel pin-out 4 3 1 2 4 3 1 2 F LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95423 Packaging information www.vishay.com/doc?95425 Revision: 31-May-16 Document Number: 93793 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000