VS-UFB201FA40 Datasheet

VS-UFB201FA40
www.vishay.com
Vishay Semiconductors
Insulated Ultrafast Rectifier Module, 200 A
FEATURES
• Two fully independent diodes
• Fully insulated package
• Ultrafast, soft reverse recovery, with high junction
temperature (TJ max. = 175 °C)
• Low forward voltage drop
• Optimized for power conversion: welding and industrial
SMPS applications
• Easy to use and parallel
• Industry standard outline
SOT-227
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
PRODUCT SUMMARY
VR
400 V
IF(AV) per module at TC = 86 °C
200 A
trr
40 ns
Type
Modules - Diode FRED Pt®
Package
SOT-227
The VS-UFB201FA40 insulated modules integrate two state
of the art ultrafast recovery rectifiers in the compact,
industry standard SOT-227 package. The diodes structure,
and its life time control, provide an ultrasoft recovery
current shape, together with the best overall performance,
ruggedness and reliability characteristics.
These devices are thus intended for high frequency
applications in which the switching energy is designed not
to be predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS,
DC/DC converters. Their extremely optimized stored
charge and low recovery current reduce both over
dissipation in the switching elements (and snubbers) and
EMI/RFI.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
SYMBOL
TEST CONDITIONS
VR
MAX.
UNITS
400
V
Continuous forward current per diode
IF
(1)
TC = 88 °C
120
Single pulse forward current per diode
IFSM
TC = 25 °C
600
PD
TC = 88 °C
311
W
2500
V
Maximum power dissipation per module
RMS isolation voltage
Maximum junction temperature
Maximum case temperature
Storage temperature
VISOL
TJ
Any terminal to case, t = 1 minute
A
-55 to +175
TC
150
TSTG
-55 to +150
°C
Note
(1) Maximum continuous forward current must be limited to 100 A to do not exceed the maximum temperature of power terminals.
Revision: 31-May-16
Document Number: 93793
1
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VS-UFB201FA40
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ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified)
PARAMETER
Cathode to anode breakdown voltage
SYMBOL
VBR
TEST CONDITIONS
IR = 100 μA
IF = 100 A
Forward voltage
VFM
Reverse leakage current
IRM
Junction capacitance
CT
MIN.
TYP.
MAX.
400
-
-
-
1.33
1.59
IF = 100 A, TJ = 125 °C
-
1.19
1.28
IF = 200 A
-
1.56
1.91
UNITS
V
IF = 200 A, TJ = 125 °C
-
1.49
1.64
VR = VR rated
-
0.20
50
μA
TJ = 175 °C, VR = VR rated
-
0.40
2
mA
VR = 400 V
-
76
-
pF
MAX.
UNITS
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
SYMBOL
trr
TEST CONDITIONS
Reverse recovery charge
IRRM
Qrr
TYP.
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V
-
40
-
TJ = 25 °C
-
80
-
TJ = 125 °C
Peak recovery current
MIN.
-
160
-
-
7
-
-
16
-
TJ = 25 °C
-
310
-
TJ = 125 °C
-
1300
-
MIN.
TYP.
MAX.
-
-
0.56
TJ = 25 °C
TJ = 125 °C
IF = 50 A
dIF/dt = 200 A/μs
VR = 200 V
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Junction to case, single leg conducting
Junction to case, both leg conducting
Case to heatsink
SYMBOL
TEST CONDITIONS
RthJC
RthCS
-
-
0.28
Flat, greased surface
-
0.075
-
-
30
-
g
Torque to terminal
-
-
1.1 (9.7)
Nm (lbf.in)
Torque to heatsink
-
-
1.3 (11.5)
Nm (lbf.in)
Weight
Mounting torque
Case style
UNITS
°C/W
SOT-227
Revision: 31-May-16
Document Number: 93793
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-UFB201FA40
Vishay Semiconductors
1000
1000
TJ = 175 °C
TJ = 175 °C
100
100
IR - Reverse Current (μA)
IF - Instantaneous Forward Current (A)
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TJ = 125 °C
TJ = 25 °C
10
TJ = 125 °C
10
1
0.1
0.01
TJ = 25 °C
0.001
1
0
0.5
1
1.5
2
0
2.5
50
100
150
200
250
300
350
400
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
CT - Junction Capacitance (pF)
10 000
1000
100
10
10
100
1000
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
PDM
0.1
DC
t1
t2
Single pulse
(thermal resistance)
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.01
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Revision: 31-May-16
Document Number: 93793
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-UFB201FA40
Vishay Semiconductors
175
250
150
225
125 °C
175
100
DC
75
IF = 50 A
150
IF = 25 A
125
Square wave (D = 0.50)
80 % Rated VR applied
50
100
25 °C
25
see note
75
(1)
0
50
0
40
80
120
160
200
100
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/μs)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
400
3000
VR = 200 V
350
2500
IF = 25 A
300
RMS Limit
250
200
150
100
DC
50
IF = 50 A
2000
Qrr (nC)
Average Power Loss (W)
VR = 200 V
200
125
trr (ns)
Allowable Case Temperature (°C)
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D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
1500
125 °C
1000
25 °C
500
0
0
0
40
80
120
160
200
240
100
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/μs)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
Fig. 8 - Typical Stored Charge vs. dIF/dt
40
VR = 200 V
IF = 25 A
30
trr (ns)
IF = 50 A
20
125 °C
10
25 °C
0
100
1000
dIF/dt (A/μs)
Fig. 9 - Typical Reverse Recovery vs. dIF/dt
Note
(1) Formula used: T = T - (Pd +Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); 
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
Revision: 31-May-16
Document Number: 93793
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For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-UFB201FA40
www.vishay.com
Vishay Semiconductors
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(4) Qrr - area under curve defined by trr
and IRRM
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
Qrr =
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 11 - Reverse Recovery Waveform and Definitions
Revision: 31-May-16
Document Number: 93793
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-UFB201FA40
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
UF
B
201
F
A
40
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Ultrafast rectifier
3
-
Ultrafast Pt diffused
4
-
Current rating (201 = 200 A)
5
-
Circuit configuration (2 separate diodes, parallel pin-out)
6
-
Package indicator (SOT-227 standard insulated base)
7
-
Voltage rating (40 = 400 V)
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT
CONFIGURATION CODE
CIRCUIT DRAWING
Lead Assignment
2 separate diodes,
parallel pin-out
4
3
1
2
4
3
1
2
F
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95423
Packaging information
www.vishay.com/doc?95425
Revision: 31-May-16
Document Number: 93793
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For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
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Document Number: 91000